A method for operating a memory includes determining to perform an error correction operation; determining whether to perform an error correction operation; generating an internal address when the error correction operation is performed; reading data from memory cells that are selected based on the internal address and an error correction code corresponding to the data; performing an error correction operation on the data based on the error correction code to produce an error-corrected data; writing the error-corrected data and an error correction code corresponding to the error-corrected data into the memory cells; determining one or more regions among regions in the memory as a repair-requiring region based on an error detected when the error correction operation is performed; receiving a first command; backing up the data and the error correction code into a redundant region in response to the first command; and repairing the repair-requiring region with the redundant region.

Various implementations described herein are directed to a device having memory architecture with an array of memory cells arranged in multiple columns with redundancy including first columns of memory cells disposed in a first region along with second columns of memory cells and redundancy columns of memory cells disposed in a second region that is laterally opposite the first region. The device may have column shifting logic that is configured to receive data from the multiple columns, shift the data from the first columns in the first region to a first set of the redundancy columns in the second region, and shift data from the second columns in the second region to a second set of the redundancy columns in the second region.

A data processing system includes a memory configured to receive memory access requests. Each memory access request having a corresponding access address and having a corresponding parity bit for an address value of the corresponding access address. The corresponding access address is received over a plurality of address lines and the parity bit is received over a parity line. The memory includes a memory array having a plurality of memory cells arranged in rows, each row having a corresponding word line of a plurality of word lines, and a row decoder coupled to the plurality of address lines, the parity line, and the plurality of word lines. The row decoder is configured to selectively activate a selected word line of the plurality of word lines based on the corresponding access address and the corresponding parity bit of a received memory access request. The concept can also be used with parity bits on columns of the memory cells and a column decoder that selects bit lines associated with column address lines.

An integrated circuit die includes memory sectors, each memory sector including a memory array. The die includes a voltage regulator with a first transistor driven by an output voltage to thereby generate a gate voltage, the output voltage being generated based upon a difference between a constant current and a leakage current. A selection circuit selectively couples the gate voltage to a selected one of the plurality of memory sectors. A leakage detector circuit drives a second transistor with the output voltage to thereby generate a copy voltage based upon a difference between a variable current and a replica of the constant current, increases the variable current in response to the copy voltage being greater than the gate voltage, and asserts a leakage detection signal in response to the copy voltage being less than the gate voltage, the leakage detection signal indicating excess leakage within the memory array.

A word line control method, a word line control circuit device, and a semiconductor memory are provided. The method includes: acquiring a row address input signal; acquiring a test mode signal; performing logical and decoding operations on the row address input signal and the test mode signal to generate a row address control signal, wherein the row address control signal includes at least two valid activation signals; and simultaneously activating at least two non-adjacent word lines based on the at least two valid activation signals. The row address control signal obtained allows simultaneous activation of at least two non-adjacent word lines. Since none of any two non-adjacent word lines share a common contact area, a test will not be affected by the disconnection of a contact area or the presence of high impedance, thus improving test accuracy.

The present disclosure includes apparatuses, methods, and systems for programming codewords for error correction operations to memory. An embodiment includes a memory having a plurality of groups of memory cells, wherein each respective one of the plurality of groups includes a plurality of sub-groups of memory cells, and circuitry configured to program a portion of a codeword for an error correction operation to one of the plurality of groups of memory cells by determining an address in that group of memory cells by performing an XOR operation on an address of one of the plurality of sub-groups of that group of memory cells, and programming the portion of the codeword to the determined address.

The embodiments provide a method for reading and writing and a memory device. The method includes: applying a read command to the memory device, the read command pointing to address information; reading data to be read out from a memory cell corresponding to the address information pointed to by the read command; storing the address information pointed to by the read command into a memory bit of a preset memory space if an error occurs in the data to be read out, wherein the preset memory space is provided with a plurality of the memory bits, each of the plurality of memory bits being associated with a spare memory cell; and backing up the address information stored in the preset memory space into a non-volatile memory cell according to a preset rule.

The disclosed technology provides for automatically skipping bad block(s) in continuous read or sequential read operations in memory devices including NAND flash memory. Bad blocks can be skipped by analyzing block integrity during one at a time addressing of the blocks, or by skipping sets of consecutive bad blocks in a set of bad blocks using stored bad block information. Multiple sets of consecutive bad blocks can also be analyzed and skipped. A list of good blocks can be maintained, and only good blocks are used when performing a continuous cache read or sequential read operation. The list can be maintained in non-volatile memory enabling the device to load the block addresses upon power on startup. Additionally, a command to add additional blocks when received can implement adding new blocks to the list.

Methods, systems, and devices for direct testing of in-package memory are described. A memory subsystem package may include non-volatile memory, volatile memory that may be configured as a cache, and a controller. The memory subsystem may support direct access to the non-volatile memory for testing the non-volatile memory in the package using a host interface of the memory subsystem rather than using dedicated contacts on the package. To ensure deterministic behavior during testing operations, the memory subsystem may, when operating with a test mode enabled, forward commands received from a host device (such as automated test equipment) to a memory interface of the non-volatile memory and bypass the cache-related circuitry. The memory subsystem may include a separate conductive path that bypasses the cache for forwarding commands and addresses to the memory interface during testing.

A nonvolatile memory device includes memory cell region including a first metal pad and a peripheral circuit region including a second metal pad, is connected to the memory cell region by the first metal pad and the second metal pad and includes including an address decoder and a page buffer circuit located on a first substrate. A memory cell array is provided in the memory cell region, which includes a first vertical structure on a second substrate. The first vertical structure includes first sub-blocks and first via areas in which one or more through-hole vias are provided, and through-hole vias pass through the first vertical structure. A control circuit in the peripheral circuit region groups the memory blocks into a plurality of groups based on whether the memory blocks is close to the first via areas and performs address re-mapping.