The present disclosure relates to an apparatus comprising a non-volatile memory architecture configured to be coupled to a System-on-Chip (SoC) device. The non-volatile memory device coupled to the SoC having a structurally independent structure linked to the SoC includes a plurality of sub arrays forming a matrix of memory cells with associated decoding and sensing circuitry, sense amplifiers coupled to a corresponding sub array, a data buffer comprising a plurality of JTAG cells coupled to outputs of the sense amplifiers; and a scan-chain connecting together the JTAG cells of the data buffer.

An integrated circuit (IC) includes first and scan latches that are enabled to load data during a first part of a clock period. A clocking circuit outputs latch clocks with one latch clock driven to an active state during a second part of the clock period dependent on a first address input. A set of storage elements have inputs coupled to the output of the first scan latch and are respectively coupled to a latch clock to load data during a time that their respective latch clock is in an active state. A selector circuit is coupled to outputs of the first set of storage elements and outputs a value from one output based on a second address input. The second scan latch then loads data from the selector's output during the first part of the input clock period.

A memory is provided in which a scan chain covers the redundancy logic for column redundancy as well as the redundancy multiplexers in each column. The redundancy logic includes a plurality of redundancy logic circuits arranged in series. Each redundancy logic circuit corresponds to a respective column in the memory. Each column is configured to route a shift-in signal through its redundancy multiplexers during a scan mode of operation.

A method of using on-chip circuitry to test a memory of a chip is provided. The method including, in a capture stage, receiving, at a first n-bit compression structure including n first stage latches corresponding to each bit of the first n-bit compression structure, a value at each respective first stage latch for each of n memory addresses of the memory, such that each respective first stage latch receives a respective value from a memory address of the memory, n being an integer greater than one, and in the capture stage, passing the values from each respective first stage latch through compression logic of the first n-bit compression structure to output a single compressed address value, providing the single compressed address value to a second stage latch of the first n-bit compression structure.

A system-on-chip is provided that includes functional circuitry that performs a function. Control circuitry controls the function based one or more configuration parameters. Non-volatile storage circuitry includes a plurality of non-volatile storage cells each being adapted to write at least a bit of the one or more configuration parameters in a rewritable, persistent manner a plurality of times. Read circuitry locally accesses the non-volatile storage circuitry, obtains the one or more configuration parameters from the non-volatile storage circuitry and provides the one or more configuration parameters to the control circuitry. Write circuitry obtains the one or more configuration parameters and provides the one or more configuration parameters to the non-volatile storage circuitry by locally accessing the non-volatile storage circuitry.

The present invention discloses a memory test circuit having repair information maintaining mechanism. A repairing control circuit controls a MBISR circuit to perform a self-repair procedure on a memory circuit and includes a remapping storage circuit and a latch storage circuit. The remapping storage circuit receives and stores repairing information generated by the MBISR circuit after the self-repair procedure finishes. The latch storage circuit is electrically coupled between the remapping storage circuit and a remapping circuit corresponding to the memory circuit to receive and store the repairing information from the remapping storage circuit such that the remapping circuit accesses the repairing information therefrom when a scan test is performed on the remapping storage circuit based on a scan chain to perform remapping and repairing on the memory circuit based on the repairing information and a redundant structure of the memory circuit.

The present disclosure provides memory devices and methods for using shared latch elements thereof. A memory device includes a substrate, an interposer disposed over the substrate, and a logic die and stacked memory dies disposed over the interposer. In the logic die, the test generation module performs a memory test operation for the memory device. The functional elements stores functional data in latch elements during a functional mode of the memory device. The repair analysis module determines memory test/repair data based on the memory test operation. The memory test/repair data comprises memory addresses of faulty memory storage locations of the memory device that are identified during the memory test operation. The repair analysis module configures the latch elements into a scan chain, accesses the memory test/repair data during the test mode of the memory device, and repairs the memory device using the memory test/repair data.

A system, comprising: a plurality of first latches; a compressor circuit, coupled to the first latches, configured to compress an first signal having X bits from the first latches to a second signal having Y bits, wherein X and Y are positive integers and X is larger than Y; and at least one second latch, coupled to the compressor circuit, configured to receive the second signal to generate a scan output, wherein each of the first latches and the second latch forms a D flip flop. The system outputs the first signal but none of the scan output in a normal mode, and outputs the scan output but none of the first signal in a test mode.

A system comprises a memory sub-system controller mounted to a printed circuit board (PCB) and an in-circuit test (ICT) device. The memory sub-system controller has test points on the PCB comprising stimulus points and observation points. The ICT device connects to the test points of the controller. The ICT device converts automated test pattern generation (ATPG) input test vectors to test signals. A first set of pin drivers of the ICT device applies the test signals to the stimulus points of the controller and a second set of pin drivers of the ICT device read output signals output at the observation points of the controller. A comparator of the ICT device compares the output signals with output test vectors. The comparator provides test result data comprising a result of the comparison.

The present invention is related to a digital circuit testing and analysis module system comprising a memory (22). The memory (22) is addressed by numerical values defined by a group of digital signals. A respective memory location associated with a specific numerical value indicates a status of the group of digital signals. The status can for example reflect the validity of the signals in the group of signals when testing a circuit.