The resistor includes a chip resistive element which includes a resistive element and metal electrodes and which is formed on first surface of a ceramic substrate, metal terminals electrically joined to the metal electrodes, and an Al member formed on the second surface side of the ceramic substrate, wherein the ceramic substrate and the Al member are joined using an Al—Si-based brazing filler metal, the metal electrodes and the metal terminals are joined to each other using a solder, and a degree of bending of an opposite surface of the Al member opposite to a surface on the ceramic substrate side is in a range of −30 μm/50 mm to 700 μm/50 mm.

The resistor includes a chip resistive element which includes a resistive element and metal electrodes and which is formed on first surface of a ceramic substrate, metal terminals electrically joined to the metal electrodes, and an Al member formed on the second surface side of the ceramic substrate, wherein the ceramic substrate and the Al member are joined using an Al—Si-based brazing filler metal, the metal electrodes and the metal terminals are joined to each other using a solder, and a degree of bending of an opposite surface of the Al member opposite to a surface on the ceramic substrate side is in a range of −30 μm/50 mm to 700 μm/50 mm.

Integrated cooling device based on Peltier effect and manufacturing method thereof are provided. The device comprises one or more first heat dissipation structures around a device area. Each first heat dissipation structure comprises first N-type deep doped regions and first P-type deep doped regions arranged alternately, first vias, and first metal interconnection layers. The first vias are respectively located on two ends of each first N-type and each first P-type deep doped region. The first metal interconnect layers connect the first vias and such that the first heat dissipation structures are connected as a first S-shaped structure. When the first S-shaped structure is turned on, heat in the first N-type deep doped regions and the first P-type deep doped regions flows from a side close to the device area to its other side away from the device area, so as to realize heat dissipation in the device area.

Self-cooling semiconductor resistor and manufacturing method thereof are provided. The resistor comprises: multiple N-type and P-type wells in a semiconductor substrate, first polysilicon gates on each N-type well, second polysilicon gates on each P-type well, and metal interconnect layers. The multiple N-type and P-type wells are arranged alternately in row and column direction, respectively. N-type and P-type deep doped regions are formed on each N-type and P-type well, respectively. The first and second polysilicon gates are N-type and P-type deep doped respectively, and there is no gate oxide layer between the first and second polysilicon gates and the semiconductor substrate. The metal interconnect layers connect the multiple first and second polysilicon gates as an S-shaped structure. In the present application, the flow direction of heat is from the inside of the resistor to its surface, thereby realizing heat dissipation and cooling.

A surface mount component can include a first substrate and a second substrate arranged adjacent the first substrate to form a monolithic body. At least one of the first substrate or the second substrate can include a thermally conductive material that is electrically insulating. A thin film component can be arranged between the first substrate and the second substrate. A first terminal can be formed over a first end of the monolithic body. A second terminal can be formed over a second end of the monolithic body that is opposite the first end. A heat sink terminal can contact the thermally conductive material of the at least one of the first substrate or the second substrate.

A resistor includes a resistive element, a first resin substrate on an upper surface of the resistive element and having a high thermal conductivity, a first heat radiator plate made of metal provided on an upper surface of the first resin substrate, a second heat radiator plate made of metal provided on the upper surface of the first resin substrate, a first edge-surface electrode provided on the first edge surface of the resistive element and connected to the first heat radiator plate, and a second edge-surface electrode provided on the second edge surface of the resistive element and connected to the second heat radiator plate.

A resistor includes a resistive element, a first resin substrate on an upper surface of the resistive element and having a high thermal conductivity, a first heat radiator plate made of metal provided on an upper surface of the first resin substrate, a second heat radiator plate made of metal provided on the upper surface of the first resin substrate, a first edge-surface electrode provided on the first edge surface of the resistive element and connected to the first heat radiator plate, and a second edge-surface electrode provided on the second edge surface of the resistive element and connected to the second heat radiator plate.

The present disclosure relates to semiconductor structures and, more particularly, to heat dissipating structures and methods of manufacture. The structure includes: a thin film resistor within a back end of the line structure; and a heat dissipating structure below the thin film resistor, the heat dissipating structure includes a top plate with a slotted configuration and being within the back end of the line structure.

The present disclosure relates to semiconductor structures and, more particularly, to heat dissipating structures and methods of manufacture. The structure includes: a thin film resistor within a back end of the line structure; and a heat dissipating structure below the thin film resistor, the heat dissipating structure includes a top plate with a slotted configuration and being within the back end of the line structure.

A resistor is composed of a resistor body part and a molded resin in which the resistor body part is embedded. The molded resin includes a base resin and a filler that is higher in thermal conductivity than the base resin.