An article includes a substrate and a resistance heating element bonded to the substrate. The resistance heating element is comprised of, by weight, 10 to 45% of graphene, 0.25 to 45% of carbon nanostructure (CNS) material different than the graphene, and a remainder of glass frit. The graphene and the CNS material include a coupling agent that bonds the graphene and the CNS material with at least the glass frit.

In an embodiment a ceramic material includes ZnO as main constituent, Y as a first additive, second additives including at least one compound containing a metal element, wherein the metal element is selected from the group consisting of Bi, Cr, Co, Mn, Ni and Sb, Si.sup.4+ as a first dopant and second dopants having at least one compound containing a metal cation from Al.sup.3+, B.sup.3+, or Ba.sup.2+, wherein a corresponds to a molar proportion of Bi calculated as Bi.sub.2O.sub.3, b corresponds to a molar proportion of Y calculated as Y.sub.2O.sub.3, c corresponds to a molar proportion of Al calculated as Al.sub.2O.sub.3, d corresponds to a molar proportion of Ba calculated as BaO, e corresponds to a molar proportion of B calculated as B.sub.2O.sub.3, f corresponds to a molar proportion of Si calculated as SiO.sub.2, g corresponds to a molar proportion of Ni calculated as NiO, h corresponds to a molar proportion of Co calculated as Co.sub.3O.sub.4, i corresponds to a molar proportion of Cr calculated as Cr.sub.2O.sub.3, j corresponds to a molar proportion of Sb calculated as Sb.sub.2O.sub.3, and k corresponds to a molar proportion of Mn calculated as Mn.sub.3O.sub.4.

A thermistor includes a thermistor element, a protective film formed on the surface of the thermistor element, and electrode portions formed on both end portions of the thermistor element, in which the protective film is formed of silicon oxide, and, as a result of observing a bonding interface between the thermistor element and the protective film, a ratio L/L.sub.0 of a length L of an observed peeled portion to a length L.sub.0 of the bonding interface in an observation field is 0.16 or less.

Provided are a varistor forming paste, a cured product thereof, and a varistor, that can increase the degree of freedom in designing an electronic device, and can exhibit appropriate varistor characteristics. The varistor forming paste contains an epoxy resin (A), a curing agent (B), and a carbon aerogel (C).

A positive temperature coefficient component includes: a substrate (32); a conductive ink (36) disposed over at least a portion of the substrate (32); a positive temperature coefficient layer (38) disposed over at least a portion of the substrate (32) and/or the conductive ink (36); and a topcoat layer (42) formed from a coating composition including a dielectric material disposed over at least a portion of the positive temperature coefficient layer (38) and/or the conductive ink (36).

In an embodiment a method for manufacturing a multilayer varistor includes providing a first ceramic powder for producing a first ceramic material and at least one second ceramic powder for producing a second ceramic material, wherein the ceramic powders differ from each other in concentration of monovalent elements X.sup.+ by 50 ppm≤Δc(X.sup.+)≤5000 ppm, wherein X.sup.+=(Li.sup.+, Na.sup.+, K.sup.+ or Ag.sup.+), and wherein Δc denotes a maximum concentration difference occurring between an active region and a near-surface region of the multilayer varistor, slicking of the ceramic powders and forming of green films, partially printing of a part of the green films with a metal paste to form inner electrodes, stacking printed and unprinted green films, laminating, decarbonizing and sintering the green films and applying outer electrodes.

Systems and methods of additively manufacturing passive electronic components are provided. An additive manufacturing device may deposit a material to create a passive electronic component. A sensor may continuously measure an electrical property of the passive electronic component across two electrical contacts as the material is deposited during manufacturing. The sensor may transmit the measured electrical property to a processor whereby the processor may adjust a material deposition rate of the additive manufacturing device. The continuous measurement of the electrical property and adjustment of the material deposition rate as the passive electronic component is produced allows for passive electronic components to be manufactured to a high degree of accuracy of the electrical property.

Systems and methods of additively manufacturing passive electronic components are provided. An additive manufacturing device may deposit a material to create a passive electronic component. A sensor may continuously measure an electrical property of the passive electronic component across two electrical contacts as the material is deposited during manufacturing. The sensor may transmit the measured electrical property to a processor whereby the processor may adjust a material deposition rate of the additive manufacturing device. The continuous measurement of the electrical property and adjustment of the material deposition rate as the passive electronic component is produced allows for passive electronic components to be manufactured to a high degree of accuracy of the electrical property.

An object is to provide a chip resistor capable of coping with high power. A chip resistor of the present disclosure includes insulating substrate, a pair of electrodes, and resistance member. A pair of electrodes are provided at both ends of the upper face of insulating substrate. Resistance member is provided on insulating substrate and connected to the pair of electrodes. Insulating substrate has first region in the center thereof and second regions at both ends of first region. Recess is provided in first region of insulating substrate. Resistance member formed in first region has a meandering shape in a top view. At least a part of resistance member is embedded in recess. Trimming groove is provided in resistance member formed in second region.

A polymer positive temperature coefficient (PPTC) material may include a polymer matrix, the polymer matrix defining a PPTC body; and a graphene filler component, disposed in the polymer matrix, wherein the graphene filler component comprises a plurality of graphene particles aligned along a predetermined plane of the PPTC body.