Under predetermined film depositing conditions, the raw material solution of the thermistor film is atomized or dropletized, the carrier gas is supplied to the obtained mist or droplet, the mist or droplet is conveyed to the substrate, and then the mist or droplet is thermally reacted on the substrate to deposit a film. A resultant thermistor thin film has a film thickness of 1 μm or less, a film width of 5 mm or more, a thickness of 50 nm or more and 5 μm or less, a thickness in the range of less than ±50 nm, a thickness of 5 mm or less, and/or a thickness of 50 nm or more and 5 μm or less, and has a film surface roughness (Ra) of 0.1 μm or less.

Under predetermined film depositing conditions, the raw material solution of the thermistor film is atomized or dropletized, the carrier gas is supplied to the obtained mist or droplet, the mist or droplet is conveyed to the substrate, and then the mist or droplet is thermally reacted on the substrate to deposit a film. A resultant thermistor thin film has a film thickness of 1 μm or less, a film width of 5 mm or more, a thickness of 50 nm or more and 5 μm or less, a thickness in the range of less than ±50 nm, a thickness of 5 mm or less, and/or a thickness of 50 nm or more and 5 μm or less, and has a film surface roughness (Ra) of 0.1 μm or less.

Under predetermined film depositing conditions, the raw material solution of the thermistor film is atomized or dropletized, the carrier gas is supplied to the obtained mist or droplet, the mist or droplet is conveyed to the substrate, and then the mist or droplet is thermally reacted on the substrate to deposit a film. A resultant thermistor thin film has a film thickness of 1 m or less, a film width of 5 mm or more, a thickness of 50 nm or more and 5 m or less, a thickness in the range of less than 50 nm, a thickness of 5 mm or less, and/or a thickness of 50 nm or more and 5 m or less, and has a film surface roughness (Ra) of 0.1 m or less.

Under predetermined film depositing conditions, the raw material solution of the thermistor film is atomized or dropletized, the carrier gas is supplied to the obtained mist or droplet, the mist or droplet is conveyed to the substrate, and then the mist or droplet is thermally reacted on the substrate to deposit a film. A resultant thermistor thin film has a film thickness of 1 m or less, a film width of 5 mm or more, a thickness of 50 nm or more and 5 m or less, a thickness in the range of less than 50 nm, a thickness of 5 mm or less, and/or a thickness of 50 nm or more and 5 m or less, and has a film surface roughness (Ra) of 0.1 m or less.

An electronic component includes: a base body 20; an external electrode that covers a part of an outer surface of the base body; and an aluminum oxide protective film. The protective film is located between the base body (and the external electrode. The thickness of the protective film in a direction perpendicular to the outer surface of the base body is defined as a film thickness (TP). The protective film is, at a site covered with the external electrode, viewed in a section that is orthogonal to the outer surface of the base body. When the average value and standard deviation of the film thickness (TP) are obtained in a range of 1 m in a direction along the outer surface of the base body, the ratio of the standard deviation to the average value is 0.4 or more.

An electronic component includes: a base body 20; an external electrode that covers a part of an outer surface of the base body; and an aluminum oxide protective film. The protective film is located between the base body (and the external electrode. The thickness of the protective film in a direction perpendicular to the outer surface of the base body is defined as a film thickness (TP). The protective film is, at a site covered with the external electrode, viewed in a section that is orthogonal to the outer surface of the base body. When the average value and standard deviation of the film thickness (TP) are obtained in a range of 1 m in a direction along the outer surface of the base body, the ratio of the standard deviation to the average value is 0.4 or more.