H01C17/265

RESISTOR MATERIAL, RESISTOR ELEMENT AND METHOD OF MANUFACTURING THE RESISTOR ELEMENT

A resistor material including a plurality of crystalline phases having a positive temperature coefficient of resistance, and an amorphous phase having a negative temperature coefficient of resistance and having a resistivity higher than the crystalline phase, in a mixed state, is provided. Moreover, a resistor element having a resistor film configured by the resistor material described above, and a method of manufacturing a resistor element by forming a film of an amorphous material having a negative temperature coefficient of resistance and subjecting this film to an annealing treatment to obtain the resistor element described above, are provided.

RESISTIVE TUNING VIA LASER INDUCED GRAPHENE FOR CARBON ALLOTROPE ELECTROTHERMAL HEATER
20230171854 · 2023-06-01 ·

A method of tuning an electrical resistance of a laser-induced graphene heater is provided. The method includes forming a base carbon heating element, and determining a target electrical resistance of a laser-induced graphene (LIG) heater to be fabricated from the base carbon heating element. The method further includes determining a targeted LIG pattern that provides the target electrical resistance, and directing laser energy on to the base carbon heating element based on the targeted LIG pattern to form one or more LIG regions. The one or more LIG regions define a LIG pattern to from the LIG heater having the target electrical resistance.

TMOV DEVICE

A thermally protected metal oxide varistor includes a body, a first electrode, a thermal fuse, and a glue. The body is made up of a crystalline microstructure including zinc oxide mixed with one or more other metal oxides. The first electrode is located on one side of the body and is connected to a first lead wire. The thermal fuse is connected between the first electrode and the first lead wire. The glue is to be deposited over the thermal fuse as well as over a top portion of the first lead wire.

Method for adjusting resistance value of thin film resistance layer in semiconductor structure

The invention provides a method for adjusting the resistance value of a thin film resistor layer in a semiconductor structure, which comprises forming the thin film resistor layer, the material of the thin film resistor layer comprises titanium nitride, and the thin film resistor layer has an original resistance value, a mask layer with tensile force is formed above the thin film resistor layer, and the mask layer with tensile force changes a lattice size of the thin film resistor layer, so that the lattice size of the thin film resistor layer becomes larger and the original resistance value of the thin film resistor layer is reduced.

Calibration system and calibrating method

A calibration system adapted to calibrate a resistance of an electrical device having a lead wire comprises a resistance detector adapted to detect the resistance of the electrical device, a first container containing an etching solution adapted to etch the lead wire, and a heater configured to heat the electrical device. If a first resistance of the electrical device detected by the resistance detector at a first temperature is within a first predetermined range, the electrical device is heated with the heater to a second temperature higher than the first temperature. A second resistance of the electrical device is detected by the resistance detector at the second temperature. If the second resistance is beyond a second predetermined range, the lead wire is etched by the etching solution to adjust the resistance of the electrical device until the second resistance at the second temperature is within the second predetermined range.

Multilayer Stack with Enhanced Conductivity and Stability
20200105436 · 2020-04-02 ·

An example method includes: (i) depositing an insulating layer on a substrate; (ii) forming a conductive polymer layer on the insulating layer; and (iii) repeating deposition of a respective insulating layer, and formation of a respective conductive polymer layer to form a multilayer stack of respective conductive polymer layers interposed between respective insulating layers. Each respective conductive polymer layer has a respective electrical resistance, such that when the respective conductive polymer layers are connected in parallel to a power source, a resultant electrical resistance of the respective conductive polymer layers is less than each respective electrical resistance.

Multilayer stack with enhanced conductivity and stability

An example method includes: (i) depositing an insulating layer on a substrate; (ii) forming a conductive polymer layer on the insulating layer; and (iii) repeating deposition of a respective insulating layer, and formation of a respective conductive polymer layer to form a multilayer stack of respective conductive polymer layers interposed between respective insulating layers. Each respective conductive polymer layer has a respective electrical resistance, such that when the respective conductive polymer layers are connected in parallel to a power source, a resultant electrical resistance of the respective conductive polymer layers is less than each respective electrical resistance.

Multilayer stack with enhanced conductivity and stability

An example method includes: (i) depositing an insulating layer on a substrate; (ii) forming a conductive polymer layer on the insulating layer; and (iii) repeating deposition of a respective insulating layer, and formation of a respective conductive polymer layer to form a multilayer stack of respective conductive polymer layers interposed between respective insulating layers. Each respective conductive polymer layer has a respective electrical resistance, such that when the respective conductive polymer layers are connected in parallel to a power source, a resultant electrical resistance of the respective conductive polymer layers is less than each respective electrical resistance.

RESISTOR AND MANUFACTURING METHOD OF RESISTOR

Provided is a resistor provided with a resistance body and electrodes provided on the resistance body, and the resistance body has an oxide film on a surface.

Multilayer Stack with Enhanced Conductivity and Stability
20190198188 · 2019-06-27 ·

An example method includes: (i) depositing an insulating layer on a substrate; (ii) forming a conductive polymer layer on the insulating layer; and (iii) repeating deposition of a respective insulating layer, and formation of a respective conductive polymer layer to form a multilayer stack of respective conductive polymer layers interposed between respective insulating layers. Each respective conductive polymer layer has a respective electrical resistance, such that when the respective conductive polymer layers are connected in parallel to a power source, a resultant electrical resistance of the respective conductive polymer layers is less than each respective electrical resistance.