A thermistor material and a method for preparing a thermistor material are provided. The thermistor material is prepared by mixing and heating a mixture containing BaTiO.sub.3, B.sub.2O.sub.3, SiO.sub.2, Li.sub.2O, P.sub.2O.sub.5, Cs.sub.2O, Nd.sub.2O.sub.3, Al.sub.2O.sub.3 and TiO.sub.2.

APTC heating assembly includes contact elements and a cuboid ceramic component on which a metallization is applied. The ceramic component comprises mutually opposing main side surfaces for heat dissipation which are larger by at least a factor of five than each of the end faces extending between the main side surfaces. The contact elements are electrically conductively connected to the metallization for introducing the power current into the ceramic component. The metallization is formed only on the main side surfaces and is in the form of elongated metallization strips. The metallization strips extend along mutually opposite edges of the cuboid ceramic component, are each assigned to one polarity, are separated by a single end face, and are connected to a power source via a common contact element.

A temperature sensor element includes: an element main body including a heat sensitive body including a thermistor sintered body of which the electrical characteristics change with temperature, and a pair of lead wires that is connected to the heat sensitive body through electrodes; and a protective layer that protects the heat sensitive body. The protective layer has an inner protective layer covering the heat sensitive body and an outer protective layer covering the outer side of the inner protective layer. The inner protective layer is formed of an aggregate of particles that are chemically stable with respect to the thermistor sintered body and made of non-metal.

An over-current protection device is a hexahedron comprising an upper surface, a lower surface and four lateral surfaces. The over-current protection device comprises a PTC device, a first insulating layer, a first electrode layer and a second electrode layer. The PTC device comprises a first conductive layer, a second conductive layer and a PTC material layer laminated therebetween. The first conductive layer comprises a first conductive section and a second conductive section separated by at least one trench. The first insulating layer is disposed on the first conductive layer. The first electrode layer is disposed on the first insulating layer and electrically coupled to the first conductive section. The second electrode layer is disposed on the first insulating layer and electrically coupled to the second conductive section. The trench comprises a primary portion not parallel to a longitudinal direction of the first and second electrode layers.

An over-current protection device is a hexahedron comprising an upper surface, a lower surface and four lateral surfaces. The over-current protection device comprises a PTC device, a first insulating layer, a first electrode layer and a second electrode layer. The PTC device comprises a first conductive layer, a second conductive layer and a PTC material layer laminated therebetween. The first conductive layer comprises a first conductive section and a second conductive section separated by at least one trench. The first insulating layer is disposed on the first conductive layer. The first electrode layer is disposed on the first insulating layer and electrically coupled to the first conductive section. The second electrode layer is disposed on the first insulating layer and electrically coupled to the second conductive section. The trench comprises a primary portion not parallel to a longitudinal direction of the first and second electrode layers.

Provided is a thin-film chip resistor including an insulating substrate; a thin-film resistive element formed on the substrate; a pair of electrodes connected to the thin-film resistive element; and a protective film covering at least the thin-film resistive element between the pair of electrodes, in which the protective film includes a first protective film and a second protective film, the first protective film containing silicon nitride in contact with the thin-film resistive element, and the second protective film containing silicon oxide in contact with the first protective film.

A thick film resistor excluding a toxic lead component from a conductive component and glass and having characteristics equivalent to or superior to conventional resistors in terms of, in a wide resistance range, resistance values, TCR characteristics, current noise characteristics, withstand voltage characteristics and the like. The thick film resistor is formed of a fired product of a resistive composition, wherein the thick film resistor contains ruthenium-based conductive particles containing ruthenium dioxide and a glass component essentially free of a lead component and has a resistance value in the range of 100 / to 10 M/ and a temperature coefficient of resistance within 100 ppm/ C.

A polymer positive temperature coefficient (PPTC) material is provided. The PPTC material may include a polymer matrix that defines a PPTC body, and further includes a high temperature polymer. The PPTC material may include a conductive filler component, disposed in the polymer matrix, an arc suppressant, and a high temperature antioxidant, disposed in the polymer matrix.

Provided is a thin-film chip resistor including an insulating substrate; a thin-film resistive element formed on the substrate; a pair of electrodes connected to the thin-film resistive element; and a protective film covering at least the thin-film resistive element between the pair of electrodes, in which the protective film includes a first protective film and a second protective film, the first protective film containing silicon nitride in contact with the thin-film resistive element, and the second protective film containing silicon oxide in contact with the first protective film.

A multilayer bead includes a body in which a plurality of ceramic layers are stacked; a plurality of internal electrode patterns formed on the plurality of ceramic layers; and first and second external electrodes formed on both end surfaces of the body and electrically connected to both ends of an internal coil formed by a combination of the plurality of internal electrode patterns, respectively. A stacking direction of the plurality of ceramic layers is parallel to both end surfaces of the body on which the first and second external electrodes are formed, and a coil axis of the internal coil is parallel to a mounting surface of the body. A board having the multilayer bead may be provided.