H01C7/049

THERMISTOR
20230112895 · 2023-04-13 ·

A thermistor that includes: a base layer containing a resin component; a thermistor layer on the base layer, wherein the thermistor layer is a composite which includes a plurality of particles including a metal oxide containing at least one first metal element that is at least one of Mn and Ni, and an amorphous phase between the plurality of particles and which contains the same metal element as the first metal element; two electrodes, wherein the two electrodes include at least one second metal element selected from the group consisting of Cu, Al, Ag, and Ni; and a bonding layer between the two electrodes and the thermistor layer, the bonding layer comprising the composite, the second metal element, and the resin component.

POLYMER-CARBON COMPOSITES FOR TEMPERATURE-DEPENDENT ELECTRICAL SWITCHING APPLICATIONS
20170261456 · 2017-09-14 ·

Disclosed here is a method for sensing temperature-dependent electrical switching response, comprising: exposing a polymer-carbon composite to a temperature change, wherein the polymer-carbon composite comprises (a) a semi-conductive or conductive carbon network intercalated with (b) a polymer matrix, wherein the carbon network comprises at least one covalently bonded carbon material, and wherein the polymer matrix comprises at least one polymer having a net electron withdrawing character and adapted to apply a gating effect on the conductive carbon; and detecting a change in electrical conductivity of the polymer-carbon composite of at least three orders of magnitude. Also disclosed is a smart switching device comprising the polymer-carbon composite and a switch triggerable by an increase or decrease in electrical conductivity of the polymer-carbon composite of at least three orders or magnitude.

Temperature sensor

A temperature sensor that includes an organic-inorganic composite negative temperature coefficient thermistor and a transistor. The organic-inorganic composite negative temperature coefficient thermistor includes a thermistor layer which includes spinel-type semiconductor ceramic composition powder containing Mn, Ni and Fe and an organic polymer component, and a pair of electrode layers. The semiconductor ceramic composition powder has a molar ratio of Mn to Ni of 85/15≥Mn/Ni≥65/35 and a Fe content of 30 parts by mole or less when a total molar amount of Mn and Ni is regarded as 100 parts by mole, and has a peak with a local maximum value of around 29° to 31° in its X-ray diffraction pattern, a half width of which peak is 0.15 or more. The transistor is electrically connected with either one of the pair of electrode layers.

TEMPERATURE SENSOR ELEMENT

There is provided a temperature sensor element including a pair of electrodes and a temperature-sensitive film disposed in contact with the pair of electrodes, in which the temperature-sensitive film includes a matrix resin and a plurality of conductive domains contained in the matrix resin, the conductive domains include a conjugated polymer and a dopant, and the number of structural units constituting the conjugated polymer is 65 or less.

Temperature sensing tape

A temperature sensing tape including a flexible, electrically insulating substrate, a plurality of temperature sensing elements disposed on the substrate, each temperature sensing element including a first electrode and a second electrode arranged in a confronting, spaced-apart relationship to define a gap therebetween, and a variable resistance material disposed within the gap and connecting the first electrode to the second electrode, wherein the first electrode of at least one of the temperature sensing elements is connected to the second electrode of an adjacent temperature sensing element by a flexible electrical conductor.

TEMPERATURE SENSOR ELEMENT

There is provided a temperature sensor element including a pair of electrodes and a temperature-sensitive film disposed in contact with the pair of electrodes, in which the temperature-sensitive film includes a fluorine atom and the temperature-sensitive film includes a matrix resin and a plurality of conductive domains contained in the matrix resin, and the conductive domains includes a conductive polymer.

TEMPERATURE SENSOR ELEMENT

There is provided a temperature sensor element including a pair of electrodes and a temperature-sensitive film disposed in contact with the pair of electrodes, in which the temperature-sensitive film includes a matrix resin and a plurality of conductive domains contained in the matrix resin, and the matrix resin constituting the temperature-sensitive film has a degree of molecular packing of 40% or more, as determined based on measurement by an X-ray diffraction method, according to expression (i): Degree of molecular packing (%)=100×(Area of peak derived from ordered structure)/(Total area of all peaks).

COMPOSITE, AND STRUCTURE AND THERMISTOR USING THE SAME
20210241946 · 2021-08-05 ·

A composite that includes multiple first metal oxide particles containing at least one metal element that is at least one of Mn or Ni, and a first amorphous phase between the multiple first metal oxide particles and which contains the at least one first metal element.

Printed temperature sensor

A printed temperature sensor (10) comprising a substrate (1) with an electrical circuit (2) comprising a pair of electrodes (2a, 2b) separated by an electrode gap (G). A sensor material (3) is disposed between the electrodes (2a, 2b) to fill the electrode gap (G), wherein the sensor material (3) comprises semi-conducting micro-particles (3p) comprising an NTC material with a negative temperature coefficient (NTC), wherein the micro-particles (3p) are mixed in a dielectric matrix (3m) functioning as a binder for printing the sensor material (3); wherein the micro-particles (3p) contact each other to form an interconnected network through the dielectric matrix (3m), wherein the interconnected network of micro-particles (3p) acts as a conductive pathway with negative temperature coefficient between the electrodes (2a, 2b).

PRINTED TEMPERATURE SENSOR

A printed temperature sensor (10) comprising a substrate (1) with an electrical circuit (2) comprising a pair of electrodes (2a, 2b) separated by an electrode gap (G). A sensor material (3) is disposed between the electrodes (2a, 2b) to fill the electrode gap (G), wherein the sensor material (3) comprises semi-conducting micro-particles (3p) comprising an NTC material with a negative temperature coefficient (NTC), wherein the micro-particles (3p) are mixed in a dielectric matrix (3m) functioning as a binder for printing the sensor material (3); wherein the micro-particles (3p) contact each other to form an interconnected network through the dielectric matrix (3m), wherein the interconnected network of micro-particles (3p) acts as a conductive pathway with negative temperature coefficient between the electrodes (2a, 2b).