In an embodiment a ceramic material includes ZnO as main constituent, Y as a first additive, second additives including at least one compound containing a metal element, wherein the metal element is selected from the group consisting of Bi, Cr, Co, Mn, Ni and Sb, Si.sup.4+ as a first dopant and second dopants having at least one compound containing a metal cation from Al.sup.3+, B.sup.3+, or Ba.sup.2+, wherein a corresponds to a molar proportion of Bi calculated as Bi.sub.2O.sub.3, b corresponds to a molar proportion of Y calculated as Y.sub.2O.sub.3, c corresponds to a molar proportion of Al calculated as Al.sub.2O.sub.3, d corresponds to a molar proportion of Ba calculated as BaO, e corresponds to a molar proportion of B calculated as B.sub.2O.sub.3, f corresponds to a molar proportion of Si calculated as SiO.sub.2, g corresponds to a molar proportion of Ni calculated as NiO, h corresponds to a molar proportion of Co calculated as Co.sub.3O.sub.4, i corresponds to a molar proportion of Cr calculated as Cr.sub.2O.sub.3, j corresponds to a molar proportion of Sb calculated as Sb.sub.2O.sub.3, and k corresponds to a molar proportion of Mn calculated as Mn.sub.3O.sub.4.

In an embodiment a ceramic material includes ZnO as main constituent, Y as a first additive, second additives including at least one compound containing a metal element, wherein the metal element is selected from the group consisting of Bi, Cr, Co, Mn, Ni and Sb, Si.sup.4+ as a first dopant and second dopants having at least one compound containing a metal cation from Al.sup.3+, B.sup.3+, or Ba.sup.2+, wherein a corresponds to a molar proportion of Bi calculated as Bi.sub.2O.sub.3, b corresponds to a molar proportion of Y calculated as Y.sub.2O.sub.3, c corresponds to a molar proportion of Al calculated as Al.sub.2O.sub.3, d corresponds to a molar proportion of Ba calculated as BaO, e corresponds to a molar proportion of B calculated as B.sub.2O.sub.3, f corresponds to a molar proportion of Si calculated as SiO.sub.2, g corresponds to a molar proportion of Ni calculated as NiO, h corresponds to a molar proportion of Co calculated as Co.sub.3O.sub.4, i corresponds to a molar proportion of Cr calculated as Cr.sub.2O.sub.3, j corresponds to a molar proportion of Sb calculated as Sb.sub.2O.sub.3, and k corresponds to a molar proportion of Mn calculated as Mn.sub.3O.sub.4.

In an embodiment a method for manufacturing a multilayer varistor includes providing a first ceramic powder for producing a first ceramic material and at least one second ceramic powder for producing a second ceramic material, wherein the ceramic powders differ from each other in concentration of monovalent elements X.sup.+ by 50 ppm≤Δc(X.sup.+)≤5000 ppm, wherein X.sup.+=(Li.sup.+, Na.sup.+, K.sup.+ or Ag.sup.+), and wherein Δc denotes a maximum concentration difference occurring between an active region and a near-surface region of the multilayer varistor, slicking of the ceramic powders and forming of green films, partially printing of a part of the green films with a metal paste to form inner electrodes, stacking printed and unprinted green films, laminating, decarbonizing and sintering the green films and applying outer electrodes.

In an embodiment a method for manufacturing a multilayer varistor includes providing a first ceramic powder for producing a first ceramic material and at least one second ceramic powder for producing a second ceramic material, wherein the ceramic powders differ from each other in concentration of monovalent elements X.sup.+ by 50 ppm≤Δc(X.sup.+)≤5000 ppm, wherein X.sup.+=(Li.sup.+, Na.sup.+, K.sup.+ or Ag.sup.+), and wherein Δc denotes a maximum concentration difference occurring between an active region and a near-surface region of the multilayer varistor, slicking of the ceramic powders and forming of green films, partially printing of a part of the green films with a metal paste to form inner electrodes, stacking printed and unprinted green films, laminating, decarbonizing and sintering the green films and applying outer electrodes.

A multilayer chip varistor includes an element body, first and second external electrodes, and first and second electrical conductor groups. The first electrical conductor group includes a first internal electrode connected to the first external electrode, and a first intermediate electrical conductor opposed to the first internal electrode. The second electrical conductor group includes a second internal electrode including a first electrically conductive material and connected to the second external electrode, and a second intermediate electrical conductor opposed to the second internal electrode. At least one of the first and second intermediate electrical conductors includes the second electrically conductive material. The element body includes a low electrical resistance region between the first and second internal electrodes. The second electrically conductive material is diffused in the low electrical resistance region.

A multilayer chip varistor includes an element body, first and second external electrodes, and first and second electrical conductor groups. The first electrical conductor group includes a first internal electrode connected to the first external electrode, and a first intermediate electrical conductor opposed to the first internal electrode. The second electrical conductor group includes a second internal electrode including a first electrically conductive material and connected to the second external electrode, and a second intermediate electrical conductor opposed to the second internal electrode. At least one of the first and second intermediate electrical conductors includes the second electrically conductive material. The element body includes a low electrical resistance region between the first and second internal electrodes. The second electrically conductive material is diffused in the low electrical resistance region.

A varistor includes a sintered body, an internal electrode, an insulating layer, and an external electrode. The internal electrode is disposed in an interior of the sintered body. The insulating layer covers at least part of the sintered body and includes Zn.sub.2SiO.sub.4. The external electrode is electrically connected to the internal electrode, covers part of the sintered body and part of the insulating layer, and is in contact with the part of the insulating layer. The insulating layer has a region being in contact with the external electrode, the region having a greater average thickness than a region of the insulating layer which is out of contact with the external electrode.

A varistor includes a sintered body, an internal electrode, an insulating layer, and an external electrode. The internal electrode is disposed in an interior of the sintered body. The insulating layer covers at least part of the sintered body and includes Zn.sub.2SiO.sub.4. The external electrode is electrically connected to the internal electrode, covers part of the sintered body and part of the insulating layer, and is in contact with the part of the insulating layer. The insulating layer has a region being in contact with the external electrode, the region having a greater average thickness than a region of the insulating layer which is out of contact with the external electrode.

A terminal connecting structure is provided with each of the electrodes provided on the element forming the electronic component; and the terminals respectively having the connecting portions arranged along the electrodes respectively. In addition, the terminal connecting structure is provided with clearance forming portions configured to respectively form the respective clearances between the electrodes and the connecting portions respectively; and the connecting materials respectively provided in the clearances, the connecting material being configured to electrically connect the connecting portions and the electrodes respectively.

A terminal connecting structure is provided with each of the electrodes provided on the element forming the electronic component; and the terminals respectively having the connecting portions arranged along the electrodes respectively. In addition, the terminal connecting structure is provided with clearance forming portions configured to respectively form the respective clearances between the electrodes and the connecting portions respectively; and the connecting materials respectively provided in the clearances, the connecting material being configured to electrically connect the connecting portions and the electrodes respectively.