An electric power converter includes an electric gatedriver circuit that includes a transformer. The transformer includes separate first and second cores of magnetically conductive material that are shaped to form respective closed loops. The transformer also includes a first electrical conductor with at least one winding arranged around a part of the first core in a first winding direction and at least one winding arranged around a part of the second core in a second winding direction opposite the first winding direction. The transformer further includes a second electrical conductor with at least one winding arranged around a part of the first core in the first winding direction and at least one winding arranged around a part of the second core in the second winding direction so as to counteract electric influence induced by a common magnetic field through the closed loops of the first and second cores.

A semiconductor device includes a first semiconductor chip, an adhesive layer that is formed on the first semiconductor chip, and a second semiconductor chip that is arranged on the first semiconductor chip via the adhesive layer. The first semiconductor chip has a first semiconductor substrate and a first wiring layer. The first wiring layer has a first inductor and a first electrode pad. The first wiring layer is formed on the first semiconductor substrate. The second semiconductor chip has a second wiring layer and a second semiconductor substrate. The second wiring layer is formed on the first wiring layer via the adhesive layer. The second semiconductor substrate is formed on the second wiring layer, and has a first opening. In a plan view, the first electrode pad is formed so as not to overlap with the second semiconductor chip, and a second electrode pad overlaps with the first opening.

A semiconductor device includes a first semiconductor chip, an adhesive layer that is formed on the first semiconductor chip, and a second semiconductor chip that is arranged on the first semiconductor chip via the adhesive layer. The first semiconductor chip has a first semiconductor substrate and a first wiring layer. The first wiring layer has a first inductor and a first electrode pad. The first wiring layer is formed on the first semiconductor substrate. The second semiconductor chip has a second wiring layer and a second semiconductor substrate. The second wiring layer is formed on the first wiring layer via the adhesive layer. The second semiconductor substrate is formed on the second wiring layer, and has a first opening. In a plan view, the first electrode pad is formed so as not to overlap with the second semiconductor chip, and a second electrode pad overlaps with the first opening.

A laminated transformer-type transmitter-receiver device for transmitting or delivering electrical signals and/or power. The laminated device can include two metal shielding layers disposed between transmit and receive windings, which, in turn, are disposed between two magnetic layers. The laminated device further includes a dielectric isolation layer disposed between the two metal shielding layers. In the laminated device, no (or very little) common mode capacitance is distributed within the dielectric isolation layer, and no (or very little) common mode or “leakage” current flows across the dielectric isolation layer. As a result, various adverse effects of the common mode capacitance and the leakage current during operation of the laminated device are avoided.

A planar transformer including a planar first primary coil; a planar first secondary coil inductively coupled with the first primary coil; and a transformer magnetic core for guiding a magnetic flux generated by the first primary coil and/or the first secondary coil around at least a first opening of the transformer magnetic core. The first primary coil and the first secondary coil are coiled around the transformer magnetic core through the first opening. The first primary coil and the first secondary coil are arranged on a first plane. The embodiments further refer to a battery charger including such a planar transformer.

An electronic device includes a magnetic assembly with a multilevel lamination or metallization structure having a core layer, dielectric layers and conductive features formed in metal layers on or between the dielectric layers in respective planes of orthogonal first and second directions and stacked along an orthogonal third direction. The conductive features include first and second patterned conductive features forming first and second windings, first and second conductive capacitor plates, and first and second conductive field plates, in which the first conductive capacitor plate is between the first conductive field plate and the core layer along the third direction and the second conductive capacitor plate is between the second conductive field plate and the core layer along the third direction.

A semiconductor device includes a semiconductor chip that has a main surface, an insulating layer that is formed on the main surface, a functional device that is formed in at least one among the semiconductor chip and the insulating layer, a low potential terminal that is formed on the insulating layer and is electrically connected to the functional device, a high potential terminal that is formed on the insulating layer at an interval from the low potential terminal and is electrically connected to the functional device, and a seal conductor that is embedded as a wall in the insulating layer such as to demarcate a region including the functional device, the low potential terminal and the high potential terminal from another region in plan view, and is electrically separated from the semiconductor chip, the functional device, the low potential terminal and the high potential terminal.

An insulating device includes a first electrode, a second electrode, and an insulating film. The insulating film is located between the first electrode and the second electrode. The insulating film includes a positive charged region. The positive charged region is located at a portion in a direction from the first electrode toward the second electrode.

An insulating element includes a first coil; a second coil; and an inter-layer insulating film located between the first coil and the second coil. The inter-layer insulating film includes a first layer, a second layer, and a third layer located between the first layer and the second layer. The first layer is located between the first coil and the third layer. The second layer is located between the second coil and the third layer. A bandgap of the third layer is narrower than a bandgap of the first layer and a bandgap of the second layer.

A gatedriver circuit for controlling a power electronic switch. The circuit provides a galvanic separation and is magnetically immune. The gatedriver circuit comprises a transformer arranged with two separate cores of magnetically conductive material each forming a closed loop. A first electrical conductor has windings around a part of both cores, and a second electrical conductor also has windings around part of both cores. The two cores are positioned close to each other to allow mutual magnetic interaction. The windings of the first and second electrical conductors around the first core have the same winding direction, and the windings of the first and second electrical conductors around the second core have opposite winding direction of the windings of the first and second electrical conductors around the first core, so as to counteract electric influence induced by a common magnetic field through the closed loops of the first and second cores. Hereby, such gatedriver circuit is suitable for controlling power switches in environments with strong magnetic fields, e.g. inside a high power wind turbine.