Systems and methods for forming a magnetostatic MEMS switch include forming a movable beam on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. A shunt bar on the movable plate may close the switch when lowered onto the contacts. The switch may generally be closed, with the shunt bar resting on the contacts. However, a magnetically permeable material may also be inlaid into the movable plate. The switch may then be opened by placing either a permanent magnet or an electromagnet in proximity to the switch.

A device includes a frame including a first end and a second end; a mechanism including a first side that faces the first end of the frame, and a second side that faces the second end of the frame; a first buckling member attached to the first side of the mechanism and the first end of the frame; a second buckling member attached to the second side of the mechanism and the second end of the frame; and at least one actuator that engages the mechanism, the first buckling member, and the second buckling member in a selective sequence causing the mechanism to articulate between the first end and the second end of the frame. Engagement of the first buckling member and the second buckling member by the at least one actuator causes the first buckling member and the second buckling member to buckle and unbuckle in the selective sequence.

The present disclosure generally relates to the combination of MEMS intrinsic technology with specifically designed solid state ESD protection circuits in state of the art solid state technology for RF applications. Using ESD protection in MEMS devices has some level of complexity in the integration which can be seen by some as a disadvantage. However, the net benefits in the level of overall performance for insertion loss, isolation and linearity outweighs the disadvantages.

Thermal switch technology is disclosed. In one example, a thermally activated switch can include an electronic substrate base, and first and second electrical contacts coupled to the electronic substrate base. The first and second electrical contacts can be movable relative to one another due to thermal expansion or contraction of a material to facilitate contact or separation of the first and second electrical contacts.

Several features are disclosed that improve the operating performance of MEMS switches such that they exhibit improved in-service life and better control over switching on and off.

A radio frequency micro-electromechanical switch (generally referred to using the acronyms RF MEMS) is described. Also described is a method of producing such an RF MEMS switch.

Various embodiments of the teachings herein include an electronic module comprising a microelectromechanical system (MEMS) switch with a substrate and a semiconductor component. The semiconductor component is formed with the substrate and connected to MEMS switch. The semiconductor component includes a diode. The substrate is formed from or with a silicon-on-insulator-wafer and/or silicon-on-insulator substrate.

A microelectromechanical system (MEMS) switch includes a movable beam suspended over a first set of conductive contacts and a second set of conductive contacts. Actuation of the MEMS switch occurs in two stages. During actuation of the MEMS switch, the movable beam is brought into contact with the first set of conductive contacts in a first stage of actuation. A first conduction path is created when the movable beam contacts the first set of conductive contacts. Continued actuation of the MEMS switch causes the movable beam to contact the second set of conductive contacts in a second stage of actuation. A second conduction path is created when the movable beam contacts the second set of conductive contacts.

Various embodiments of the teachings herein include an electronic module. The module may include: an electrical circuit; a first MEMS switch having a first control contact with a first switching threshold voltage; and a second MEMS switch having a second control contact with a second switching threshold voltage different than the first. The first control contact and the second MEMS switch are linked to the electrical circuit.

A method of manufacturing a MEMS device, wherein the MEMS device has a cavity in which a beam will move to change the capacitance of the device. After most of the device build-up has occurred, sacrificial material is removed to free the beam within the MEMS device cavity. Thereafter, exposed ruthenium contacts are etched back with an etchant comprising chlorine to remove the top surface of both the top and bottom contacts. Due to this etch back process, low contact resistance can be achieved with less susceptibility to stiction events. Stiction performance can be further improved by conditioning the ruthenium contacts in a fluorine based plasma. The fluorine based plasma process, or fluorine treatment, can be performed prior to or after etch-back process of the ruthenium contacts.