A method for manufacturing a microelectronic semiconductor device comprising the steps of: forming a trench in a body, the trench having side walls, a opening, and a bottom; forming a sacrificial layer in the trench; forming a recess in the sacrificial layer; forming a restriction structure between the sacrificial layer and the opening of the trench, defining a through hole for access to the sacrificial layer; completely removing the sacrificial layer through said through hole; and depositing a metal layer over the body, thus closing the opening of the trench and forming an electron-emission cathode tip.

Electron emitters and methods of fabricating the electron emitters are disclosed. According to certain embodiments, an electron emitter includes a tip with a planar region having a diameter in a range of approximately (0.05-10) micrometers. The electron emitter tip is configured to release field emission electrons. The electron emitter further includes a work-function-lowering material coated on the tip.

Nanoscale field-emission devices are presented, wherein the devices include at least a pair of electrodes separated by a gap through which field emission of electrons from one electrode to the other occurs. The gap is dimensioned such that only a low voltage is required to induce field emission. As a result, the emitted electrons energy that is below the ionization potential of the gas or gasses that reside within the gap. In some embodiments, the gap is small enough that the distance between the electrodes is shorter than the mean-free path of electrons in air at atmospheric pressure. As a result, the field-emission devices do not require a vacuum environment for operation.

Electron emitters and method of fabricating the electron emitters are disclosed. According to certain embodiments, an electron emitter includes a tip with a planar region having a diameter in a range of approximately (0.05-10) micrometers. The electron emitter tip is configured to release field emission electrons. The electron emitter further includes a work-function-lowering material coated on the tip.

Electron emitters and methods of fabricating the electron emitters are disclosed. According to certain embodiments, an electron emitter includes a tip with a planar region having a diameter in a range of approximately (0.05-10) micrometers. The electron emitter tip is configured to release field emission electrons. The electron emitter further includes a work-function-lowering material coated on the tip.

The purpose of the present invention is to provide an emitter that is made of hafnium carbide (HfC) and that releases electrons in a stable and highly efficient manner, a method for manufacturing the emitter, and an electron gun and electronic device in which the emitter is used. In this nanowire equipped emitter, the nanowires are made of hafnium carbide (HfC) single crystal, the longitudinal direction of the nanowires match the <100> crystal direction of the hafnium carbide single crystal, and the end part of the nanowires through which electrons are to be released comprise the (200) face and the {310} face of the hafnium carbide single crystal, with the (200) face being the center and the {311} faces surrounding the (200) face.

Electron emitters and method of fabricating the electron emitters are disclosed. According to certain embodiments, an electron emitter includes a tip with a planar region having a diameter in a range of approximately (0.05-10) micrometers. The electron emitter tip is configured to release field emission electrons. The electron emitter further includes a work-function-lowering material coated on the tip.

The purpose of the present invention is to provide an emitter that is made of hafnium carbide (Hf) and that releases electrons in a stable and highly efficient manner, a method for manufacturing the emitter, and an electron gun and electronic device in which the emitter is used.

In this nanowire-equipped emitter, the nanowires are made of hafnium carbide (HfC) single crystal, the longitudinal direction of the nanowires match the <100> crystal direction of the hafnium carbide single crystal, and the end part of the nanowires through which electrons are to be released comprise the (200) face and the {310} face of the hafnium carbide single crystal, with the (200) face being the center and the {311} face surrounding the (200) face.

Electron emitters and methods of fabricating the electron emitters are disclosed. According to certain embodiments, an electron emitter includes a tip with a planar region having a diameter in a range of approximately (0.05-10) micrometers. The electron emitter tip is configured to release field emission electrons. The electron emitter further includes a work-function-lowering material coated on the tip.

Nanoscale field-emission devices are presented, wherein the devices include at least a pair of electrodes separated by a gap through which field emission of electrons from one electrode to the other occurs. The gap is dimensioned such that only a low voltage is required to induce field emission. As a result, the emitted electrons energy that is below the ionization potential of the gas or gasses that reside within the gap. In some embodiments, the gap is small enough that the distance between the electrodes is shorter than the mean-free path of electrons in air at atmospheric pressure. As a result, the field-emission devices do not require a vacuum environment for operation.