An apparatus may include a drift tube assembly, the drift tube assembly defining a triple gap configuration, and arranged to accelerate and transmit an ion beam along abeam path. The apparatus may include a resonator, to output an RF signal to the drift tube assembly, and an RF quadrupole triplet, connected to the drift tube assembly, and arranged circumferentially around the beam path.

An apparatus may include a drift tube assembly, the drift tube assembly defining a triple gap configuration, and arranged to accelerate and transmit an ion beam along abeam path. The apparatus may include a resonator, to output an RF signal to the drift tube assembly, and an RF quadrupole triplet, connected to the drift tube assembly, and arranged circumferentially around the beam path.

A specific type ion source 10 includes a chamber 11; a source gas supply 12 configured to supply an O.sub.2 gas into the chamber 11; a plasma forming device 13 configured to form plasma within the chamber 11 by applying a high frequency power to the O.sub.2 gas supplied into the chamber 11; an accelerator 14 configured to extract ions of an O element included in the plasma formed within the chamber 11 to an outside of the chamber 11, and configured to accelerate the extracted ions in a direction indicated by an arrow AR14; and a sorting device 15 configured to sort out a specific type ion O.sup.− from the ions accelerated by the accelerator 14 and configured to output the sorted specific type ion in a direction indicated by an arrow AR12.

A charged particle beam arrangement is described. The charged particle beam arrangement includes a charged particle source including a cold field emitter, a beam limiting aperture between the charged particle source and a magnetic condenser lens; the magnetic condenser lens comprising a first inner pole piece and a first outer pole piece, wherein a first axial distance between the charged particle source and the first inner pole piece is equal or less than approximately 20 mm, an acceleration section for accelerating the charged particle beam to an energy of 10 keV or more, a magnetic objective lens comprising a second inner pole piece and a second outer pole piece, a third axial distance between the second inner pole piece and a surface of a specimen is equal to or less than approximately 20 mm, and a deceleration section.

To provide an ion milling system that can suppress an orbital shift of an observation electron beam emitted from an electron microscope column, the ion milling system includes: a Penning discharge type ion gun 100 that includes a permanent magnet 114 and that generates ions for processing a sample; and a scanning electron microscope for observing the sample, in which a magnetic shield 172 for reducing a leakage magnetic field from the permanent magnet 114 to the electron microscope column is provided.

To provide an ion milling system that can suppress an orbital shift of an observation electron beam emitted from an electron microscope column, the ion milling system includes: a Penning discharge type ion gun 100 that includes a permanent magnet 114 and that generates ions for processing a sample; and a scanning electron microscope for observing the sample, in which a magnetic shield 172 for reducing a leakage magnetic field from the permanent magnet 114 to the electron microscope column is provided.

An ion implantation system including an ion source for generating an ion beam, an end station for holding a substrate to be implanted by the ion beam, and a linear accelerator disposed between the ion source and the end station and adapted to accelerate the ion beam, the linear accelerator including a beam tube for transmitting the ion beam, the beam tube having at least five adjoining sidewalls, at least one resonator coupled to the beam tube, and at least one turbomolecular pump coupled to the beam tube, wherein at least one of the at least five adjoining sidewalls of the beam tube has an opening formed therein for providing access to an interior of the beam tube.

Provided is a large linear TCP source, a large linear charged particle beam source using the plasma source, and a grid for the large linear charged particle beam source. The large linear charged particle beam source includes: a large linear TCP source having at least two unit TCP sources mounted inside a plasma vacuum chamber; a beam body positioned at the front of the TCP source and configured to confine plasma generated from the TCP source; a beam grid positioned at an outlet of the beam body to extract charged particles from the plasma inside the beam body; and an acceleration grid positioned at a predetermined distance away from the beam grid to accelerate the charged particles extracted from the beam grid.

Provided is an atomic layer etching apparatus comprising: a plasma source; a grid assembly composed of a plurality of grids to which potentials can be applied, disposed at the front of the plasma source, and configured to extract charged particles from the plasma; and a magnetic field applying module configured to apply a magnetic field to a flight space of the charged particles so that the charged particles are obliquely incident on a target substrate at a preset angle. The charged particles extracted from the plasma by the grid assembly fly while rotating with a preset curvature by the magnetic field and are obliquely incident on the substrate. As a result, the apparatus limits the collision energy of the charged particles when they are incident on the substrate, thereby enabling atomic layer etching of the target substrate.

An ion implanter. The ion implanter may include an ion source, to generate a continuous ion beam. The ion implanter may further include a linear accelerator, comprising a buncher, to receive the continuous ion beam and generate a bunched ion beam, and further comprising a plurality of acceleration stages, arranged to receive the bunched ion beam and accelerate the bunched ion beam. The ion implanter may also include a plurality of quadrupoles, arranged in alternating fashion with the plurality of acceleration stages; and a plurality of quadrupole switch assemblies, coupled to the plurality of plurality of quadrupoles, respectively, wherein a given quadrupole switch assembly comprises a polarity switching circuit.