A method includes moving a plurality of sensors along a translation path with respect to an ion beam, acquiring sensor signals produced by the plurality of sensors, converting the acquired sensor signals into a data set representative of a two-dimensional (2D) profile of the ion beam, generating a plurality of first one-dimensional (1D) profiles of the ion beam from the data set, generating a plurality of second 1D profiles of the ion beam by spatially inverting each of the plurality of first 1D profiles, generating a plurality of third 1D profiles of the ion beam by superposing first current density values of each of the plurality of first 1D profiles with second current density values of a corresponding one of the plurality of second 1D profiles and determining whether to continue an implantation process with the ion beam in accordance with the plurality of third 1D profiles.

Provided is an ion milling device capable of improving the reproducibility of an ion distribution. An ion milling device includes: an ion source (1); a sample stage (2) on which a sample (4) to be processed by being irradiated with an unfocused ion beam from the ion source (1) is placed; and a drive unit (8) configured to be arranged between the ion source (1) and the sample stage (2), and to move a linear ion beam measuring member (7) extending in a first direction to a second direction orthogonal to the first direction, in which the drive unit (8) moves the ion beam measuring member (7) within an emission range of the ion beam in a state where the ion beam is outputted from the ion source (1) under a first emission condition, and an ion beam current flowing through the ion beam measuring member (7) is measured by irradiating the ion beam measuring member (7) with the ion beam.

The present disclosure addresses the problem of providing an electron gun that can directly monitor an intensity of an electron beam emitted from a photocathode using only the configuration provided to the electron gun, an electron beam applicator equipped with an electron gun, and a method for controlling an electron gun.

The aforementioned problem can be solved by an electron gun comprising a light source, a photocathode that emits an electron beam in response to receiving light from the light source, an anode, an electron-beam-shielding member with which it is possible to shield part of the electron beam, and a measurement unit that measures the intensity of the electron beam emitted from the photocathode using a measurement electron beam shielded by the electron-beam-shielding member.

The invention provides a bias voltage to the component (such as the Faraday cup) for reducing the generation of particles, such as the implanted ions and/or the combination of the implanted ions and the material of the component, and preventing particles peeling away the component. The strength of the biased voltage should not significantly affect the implantation of ions into the wafer and should significantly prevent the emission of radiation and/or electrons away the biased component. How to provide and adjust the biased voltage is not limited, both the extra voltage source and the amended Pre-Amplifier are acceptable. Moreover, due to the electric field generated by the Faraday cup is modified by the biased voltage, the ion beam divergence close to the Faraday cup may be reduced such that the potential difference between the ion beam measured by the profiler and received by the Faraday cup may be minimized.

An ion beam profiling system include a beam profiling element, an ion sensitive element electrically isolated from the beam profiling element, an ion source configured to emit an ion beam at the beam profiling element and the ion sensitive element, and a current measuring device coupled to the ion sensitive element. The beam profiling element includes a plate of material having two parallel major surfaces, a first slit aperture extending through the plate of material and having a first longitudinal length extending in a direction parallel to the two parallel major surfaces, and a second slit aperture extending through the plate of material and having a second longitudinal length extending in a direction parallel to the two parallel major surfaces, wherein the first longitudinal length of the first slit aperture is perpendicular to the second longitudinal length of the second slit aperture.

A particle beam column generates a particle beam of charged particles, for example electrons or ions, and direct it onto a sample. The particle beam column comprises a multi-aperture stop and a deflection system for selectively steering the particle beam through one of a plurality of apertures provided in the multi-aperture stop. The apertures have different sizes in order to limit the current strength of the particle beam to different values. The particle beam column furthermore comprises a lens for changing the divergence angle of the particle beam upstream of a first stop. The lens can comprise a magnetic lens, which comprises a magnetic core with a plurality of parts, which are electrically insulated from one another and can have substantially different electrical potentials during operation. Some of the parts of the magnetic core can have the same electrical potential as the first stop during operation.

An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.

A surface processing apparatus is an apparatus which performs surface processing on an inspection object 20 by irradiating the inspection object with an electron beam. A surface processing apparatus includes: an electron source 10 (including lens system that controls beam shape of electron beam) which generates an electron beam; a stage 30 on which an inspection object 20 to be irradiated with the electron beam is set; and an optical microscope 110 for checking a position to be irradiated with the electron beam. The current value of the electron beam which irradiates the inspection object 20 is set at 10 nA to 100 A.

One or more examples relate, generally, to an apparatus. The apparatus includes a charged particle source and a charged particle pointer. The charged particle pointer urges charged particles emitted by the charged particle source in a predetermined direction. The charged particle pointer comprises a repeller, and an isolator positioned along a path extending from the repeller in the predetermined direction.

A method, including using an implant recipe to perform an implant by scanning an ion beam along a first axis over a substrate, coated with a photoresist layer, while the substrate is scanned along a perpendicular axis; measuring an implant current (I) during the implant, using a first detector, positioned to a side of a substrate position; determining a value of a difference ratio (I−B)/(B), based upon the implant current, where B is current measured by the first detector, during a calibration at base pressure; determining a plurality of values of a current ratio (CR) for the plurality of instances, based upon the difference ratio, the current ratio being a ratio of the implant current to a current measured by a second detector, positioned over the substrate position, during the calibration; and adjusting scanning the ion beam, scanning of the substrate, or a combination thereof, based upon the current ratio.