A scanning electron microscopy system that includes a primary electron beam radiation unit configured to irradiate a first pattern of a substrate having a second pattern formed in a peripheral region of the first pattern, a detection unit configured to detect back scattered electrons emitted from the substrate, an image generation unit configured to generate an electron beam image corresponding to a strength of the back scattered electrons, a designating unit configured to designate a depth measurement region in which the first pattern exists on the electron beam image, and a processing unit configured to obtain an image signal of the depth measurement region and a pattern density in the peripheral region where the second pattern exists, and to estimate a depth of the first pattern based on the obtained image signal of the depth measurement region and the pattern density in the peripheral region.

Techniques for yield management in semiconductor inspection systems are described. According to one aspect of the present invention, columns of sensing mechanism are configured with different functions, weights and performances to inspect a sample to significantly reduce the time that would be otherwise needed when all the columns were equally applied.

A non-contact angle measuring apparatus includes a matter-wave and energy (MWE) particle source and a detector. The MWE particle source is used for generating boson or fermion particles. The detector is used for detecting a plurality peaks or valleys of an interference pattern generated by 1) the boson or fermion particles corresponding to a slit, a bump, or a hole of a first plane and 2) matter waves' wavefront-split associated with the boson or fermion particles reflected by a second plane, wherein angular locations of the plurality peaks or valleys of the interference pattern, a first distance between a joint region of the first plane and the second plane, and a second distance between the detector and the slit are used for deciding an angle between the first plane and the second plane.

In a plasma processing apparatus, a mounting table have a first mounting surface on which a target object or a jig is mounted and a second mounting surface on which a ring member is mounted. The jig is used for measuring a thickness of the ring member disposed around the target object and having a facing portion facing an upper surface of the ring member. Elevating mechanisms lift or lower the ring member with respect to the second mounting surface. An acquisition unit acquires gap information indicating a gap dimension between the second mounting surface and the facing portion of the jig. A measurement unit measures a lifted distance of the ring member from the second mounting surface. A thickness calculation unit calculates the thickness of the ring member based on the gap dimension and the measured lifted distance of the ring member.

A control method includes: (a) connecting a power supply to an electrode of an electrostatic chuck inside a chamber and applying a voltage from the power supply to the electrode; (b) after (a), switching a connection between the electrode and the power supply to a non-connection state; (c) after (b), supplying a gas into the chamber to generate plasma; and (d) measuring a potential of the electrode during (c).

A method, a non-transitory computer readable medium and a system for focusing an electron beam. The method may include focusing the electron beam on at least one evaluated area of a wafer, based on a height parameter of each one of the at least one evaluated area. The wafer includes a transparent substrate. The height parameter of each one of the at least one evaluated area is determined based on detection signals generated as a result of an illumination of one or more height-measured areas of the wafer with a beam of photons. The illumination occurs while one or more supported areas of the wafer contact one or more supporting elements of a chuck, and while each one of the one or more height-measured areas are spaced apart from the chuck by a distance that exceeds a depth of field of the optics related to the beam of photons.

The present invention proposes a pattern measurement tool characterized by being provided with: a charged-particle beam sub-system having a tilt deflector; and a computer sub-system which is connected to the charged-particle beam sub-system and which is for executing measurement of a pattern on the basis of a signal obtained by said charged-particle beam sub-system, wherein the charged-particle beam sub-system acquires at least two signal profiles by scanning beams having at least two incidence angles, the computer sub-system measures the dimension between one end and the other end of the pattern on the basis of the at least two signal profiles, calculates the difference between the two measurements, and calculates the height of the pattern by inputting the difference value determined by said calculation into a relational formula indicating the relation between the height of the pattern and said difference value.

A control method includes: (a) connecting a power supply to an electrode of an electrostatic chuck inside a chamber and applying a voltage from the power supply to the electrode; (b) after (a), switching a connection between the electrode and the power supply to a non-connection state; (c) after (b), supplying a gas into the chamber to generate plasma; and (d) measuring a potential of the electrode during (c).

A scanning electron microscopy system that includes a primary electron beam radiation unit configured to irradiate a first pattern of a substrate having a second pattern formed in a peripheral region of the first pattern, a detection unit configured to detect back scattered electrons emitted from the substrate, an image generation unit configured to generate an electron beam image corresponding to a strength of the back scattered electrons, a designating unit configured to designate a depth measurement region in which the first pattern exists on the electron beam image, and a processing unit configured to obtain an image signal of the depth measurement region and a pattern density in the peripheral region where the second pattern exists, and to estimate a depth of the first pattern based on the obtained image signal of the depth measurement region and the pattern density in the peripheral region.

The present invention proposes a pattern measurement tool characterized by being provided with: a charged-particle beam sub-system having a tilt deflector; and a computer sub-system which is connected to the charged-particle beam sub-system and which is for executing measurement of a pattern on the basis of a signal obtained by said charged-particle beam sub-system, wherein the charged-particle beam sub-system acquires at least two signal profiles by scanning beams having at least two incidence angles, the computer sub-system measures the dimension between one end and the other end of the pattern on the basis of the at least two signal profiles, calculates the difference between the two measurements, and calculates the height of the pattern by inputting the difference value determined by said calculation into a relational formula indicating the relation between the height of the pattern and said difference value.