A measurement apparatus, a measurement compensation system, a measurement method and a measurement compensation method are provided. The measurement apparatus includes a jig wafer including: a wafer; a distance measuring sensor disposed on a front surface of the wafer and configured to measure a distance between the jig wafer and an upper electrode on the top of a reaction chamber after the jig wafer is placed on a wafer chuck of the reaction chamber; a horizontal sensor disposed on the front surface of the wafer and configured to measure the horizontal condition of the wafer chuck after the jig wafer is placed on the wafer chuck; and a data transmitting device connected with the distance measuring sensor and the horizontal sensor and configured to transmit the data measured by the distance measuring sensor and the data measured by the horizontal sensor.

Systems and methods are provided for charged particle detection. The detection system can comprise a signal processing circuit configured to generate a set of intensity gradients based on electron intensity data received from a plurality of electron sensing elements. The detection system can further comprise a beam spot processing module configured to determine, based on the set of intensity gradients, at least one boundary of a beam spot; and determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot. The beam spot processing module can further be configured to determine an intensity value of the beam spot based on the electron intensity data received from the first set of electron sensing elements and also generate an image of a wafer based on the intensity value.

The invention provides an observation system capable of observing a formation position of a target shape that cannot be directly irradiated with an electron beam. The observation system includes an electron microscope and a computer. The electron microscope is configured to irradiate, with an electron beam, a first surface position on a specimen, which is different from a formation position of a target shape on the specimen, detect predetermined electrons that are scattered in the specimen from the first surface position and that escape from the formation position of the target shape to an outside of the specimen, and output the predetermined electrons as a detection signal. The computer is configured to output one or more values related to the target shape based on the detection signal.

A method for removing residue deposits from a reaction chamber includes supplying a cleaning gas into the reaction chamber via direct delivery from a remote plasma source (RPS). The cleaning gas forms a plurality of gas flow streamlines within the reaction chamber. Each of the streamlines originates at an injection point for receiving the cleaning gas and terminates at a chamber pump port coupled to a fore line for evacuating the cleaning gas. A flow characteristic of the cleaning gas is modified to redirect at least a portion of the gas flow streamlines to circulate in proximity to an inner perimeter of the reaction chamber to remove the residue deposits or to enhance the diffusion of cleaning species to surfaces to be cleaned. The inner perimeter is disposed along one or more vertical surfaces of the reaction chamber that are orthogonal to a horizontal surface including the injection point.

Provided is a sample image observation device including an SEM and a control system configured to control the SEM. An observation region of a sample is divided into a plurality of sections, and restoration processing is performed on an image which is acquired by irradiating each section with a sparse electron beam, based on scanning characteristics in the section. A reduction in quality of a restored image due to a beam irradiation position deviation caused by a scanning response is prevented and restoration with high accuracy and high throughput under a condition for preventing sample damage is possible.

A method for controlling a critical dimension of a mask layer is described. The method includes receiving a first primary parameter level, a second primary parameter level, a first secondary parameter level, a second secondary parameter level, and a third secondary parameter level. The method also includes generating a primary signal having the first primary parameter level, and transitioning the primary signal from the first primary parameter level to the second primary parameter level. The method further includes generating a secondary radio frequency (RF) signal having the first secondary parameter level, and transitioning the secondary RF signal from the first secondary parameter level to the second secondary parameter level. The method includes transitioning the secondary RF signal from the second secondary parameter level to the third secondary parameter level.

A plasma processing apparatus includes a mounting table, an acquisition unit, a calculation unit, and an elevation control unit. The mounting table mounts thereon a target object as a plasma processing target. The elevation mechanism vertically moves a focus ring surrounding the target object. The acquisition unit acquires state information indicating a measured state of the target object. The calculation unit calculates a height of the focus ring at which positional relation between an upper surface of the target object and an upper surface of the focus ring satisfies a predetermined distance based on the state of the target object that is indicated by the state information acquired by the acquisition unit. The elevation control unit controls the elevation mechanism to vertically move the focus ring to the height calculated by the calculation unit.

Provided is an electron microscope for generating a montage image by acquiring images of a plurality of regions in a montage image capturing region set on a specimen, and by connecting the acquired images. The electron microscope includes a specimen surface height calculating unit that calculates a distribution of specimen surface heights in the montage image capturing region by performing curved surface approximation based on the specimen surface heights determined by performing focus adjustment at a plurality of points set in a region including the montage image capturing region, and an image acquiring unit that acquires the images of the plurality of regions based on the calculated distribution of the specimen surface heights.

Analyzing a buried layer on a sample includes milling a spot on the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along a sidewall of the spot. From a first perspective a first distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. From a second perspective a second distance is measured between the first point on the sidewall corresponding to the upper surface of the buried layer and the second point on the sidewall corresponding to the lower surface of the buried layer. A thickness of the buried layer is determined using the first distance and the second distance.

A method for operating a particle beam microscope comprises scanning an object using a particle beam and detecting electrons and x-ray radiation when scanning an object using a particle beam. Improved x-ray radiation information can be generated by combining weighted x-ray radiation information items according to the formula

[00001]$S_e\left({\stackrel{.fwdarw.}{r}}_i\right)=\underset{j}{.Math.}w\left(i,j\right).Math.S\left({\stackrel{.fwdarw.}{r}}_j\right),$

wherein S({right arrow over (r)}.sub.i) is the detected x-ray radiation intensity assigned to a location {right arrow over (r)}.sub.i. The following holds true for the weights, for example:

[00002]$w\left(i,j\right)=e^{-{\left({\stackrel{.fwdarw.}{r}}_i-{\stackrel{.fwdarw.}{r}}_j\right)}^2/{\sigma }_f^2}.Math.e^{-{(I\left({\stackrel{.fwdarw.}{r}}_i\right)-I({\stackrel{.fwdarw.}{r}}_{}}^{}}$