A light interference system is provided. The light interference system includes a light source configured to generate a measurement light; a fiber configured to propagate therethrough the measurement light; and a measurement device. The fiber includes a single-mode fiber, a multimode fiber and a connector connecting the single-mode fiber and the multimode fiber. A tip end of the fiber is formed of the multimode fiber, and an end surface of the tip end of the fiber is configured to emit the measurement light to a measurement target object and receive a reflection light from the measurement target object. The measurement device is configured to measure physical property of the measurement target object based on the reflection light.

A model-based control method includes: (a) acquiring temperature control data including temperature data of each of a plurality of zones of a temperature control member provided in a processing apparatus, temperature of each of the plurality of zones being individually controllable; (b) for each zone, specifying a temperature of another zone that is weight-averaged by a weighting coefficient determined according to a magnitude of heat transfer with the another zone; (c) for each zone, specifying a parameter of a state-space model of multi-input/single-output using the specified temperature of the another zone and the temperature control data; (d) creating a state-space model of multi-input/multi-output by assigning the specified parameter of the state-space model of multi-input/single-output to each element of the state-space model of multi-input/multi-output; and (e) controlling the temperature of each of the plurality of zones of the temperature control member using the state-space model of multi-input/multi-output.

A system and method for controlling an amount of outgassing caused by implanting ions into a photoresist disposed on a workpiece. The amount of outgassing is based on the species being implanted, the type of photoresist, the energy of the implant, and the amount of dose that has already been implanted, among other effects. By controlling the effective beam current, the amount of outgassing may be maintained below a predetermined threshold. By developing and utilizing the relationship between effective beam current, dose completed and rate of outgassing, the effective beam current may be controlled more precisely to implant the workpiece in the most efficient manner while remaining below the predetermined outgassing threshold.

An embodiment provides a deposition apparatus, including: a process chamber; a residual gas analyzer connected to the process chamber; a cleansing gas supplier connected to the process chamber; and a driver that is connected to the residual gas analyzer and the cleansing gas supplier and controls the residual gas analyzer and the cleansing gas supplier.

The present invention relates to methods of delayering a semiconductor integrated circuit die or wafer. In at least one aspect, the method includes exposing a die or wafer to plasma of an etching gas and detecting exposure of one or more metal layers within the die. In one aspect of the invention, the plasma of the etching gas is non-selective and removes all materials in a layer at about the same rate. In another aspect of the invention, two different plasmas of corresponding etching gases are employed with each plasma of the etching gas being selective, thus necessitating the sequential use of both plasmas of corresponding etching gases to remove all materials in a layer.

A mask member is provided at an entrance opening of a mirror unit. Of a first diffraction grating and a second diffraction grating, when the second diffraction grating is used, the mask member masks preceding mirrors. With this process, aberration caused by reflective X-ray is suppressed. When the first diffraction grating is used, the mask member does not function. Alternatively, the mask member and another mask member may be selectively used.

The invention relates to a device (100) for reducing ice contamination of a sample (S) in a chamber (210) of a focused ion beam milling apparatus (200), wherein the device (100) comprises a body (110) configured to be cooled to cryogenic temperatures, wherein the body (110) comprises an aperture (111), which is configured such that an ion beam (I) generated by an ion source (220) can pass from the ion source (220) through the aperture (111) to the sample (S), wherein the body (110) comprises a recess (112), wherein said aperture (111) is arranged in the recess (112).

The invention further relates to a focused ion beam milling apparatus (200) and a method for focused ion beam milling of a sample (S).

According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel in which a substrate is processed; an outer vessel configured to cover an outer circumference of the process vessel; a gas flow path provided between the outer vessel and the outer circumference of the process vessel; an exhaust path in communication with the gas flow path; an adjusting valve configured to be capable of adjusting a conductance of the exhaust path; a first exhaust apparatus provided on the exhaust path downstream of the adjusting valve; a pressure sensor configured to measure an inner pressure of the outer vessel; and a controller configured to be capable of adjusting an exhaust volume flow rate of the first exhaust apparatus by controlling the first exhaust apparatus based on a pressure measured by the pressure sensor.

A method for detecting radicals in process gases in a semiconductor fabrication assembly is provided where the semiconductor fabrication includes a plasma source and a mass spectrometer with an ion source. The method includes separating ions from the process gases and determining a fixed electron energy in which to measure the process gases. Process gases in the semiconductor fabrication assembly are continuously sampled. A first measurement is performed on the sampled process gases at the electron energy using the mass spectrometer, where the first measurement is performed with the plasma source off. A second measurement of the sampled process gases is performed at the fixed electron energy using the mass spectrometer, where the second measurement is performed with the plasma source on. An amount of a radical present in the sampled process gases is determined as a difference between the second measurement and the first measurement.

An apparatus includes an electrostatic chuck and located within a vacuum enclosure. A plurality of conductive plates can be embedded in the electrostatic chuck, and a plurality of plate bias circuits can be configured to independently electrically bias a respective one of the plurality of conductive plates. Alternatively or additionally, a plurality of spot lamp zones including a respective set of spot lamps can be provided between a bottom portion of the vacuum enclosure and a backside surface of the electrostatic chuck. The plurality of conductive plates and/or the plurality of spot lamp zones can be employed to locally modify chucking force and to provide local temperature control.