An input lens is provided which has a large acceptance solid angle for electrons. The input lens is for use in an electron spectrometer and disposed between an electron source producing electrons and an electron analyzer in the electron spectrometer. The input lens has a reference electrode at a reference potential, a slit, first through nth electrodes, where n is an integer equal to or greater than three, arranged between the reference electrode and the slit, and a second mesh attached to the first electrode. The first through nth electrodes are arranged in this order along an optical axis. The second mesh is at a potential higher than the reference potential.

A semiconductor device includes a tube-like structure comprising a plurality of dielectric layers and conductor layers that are disposed on top of one another; a conductor tip integrally formed with a cap conductor layer that is disposed on a top surface of the tube-like structure, wherein the conductor tip extends to a central hole of the tube-like structure; and at least one photodetector formed within a bottom portion of the tube-like structure.

Provided is a compact two-dimensional electron spectrometer that is capable of variably adjusting the deceleration ratio over a wide range, and performing simultaneous measurement of the two-dimensional emission angle distribution with a high energy resolution over a wide solid angle of acquisition. The two-dimensional electron spectrometer is configured from: a variable deceleration ratio spherical aberration correction electrostatic lens; a cylindrical mirror type energy analyzer or a wide angle energy analyzer; and a projection lens. The variable deceleration ratio spherical aberration correction electrostatic lens is configured from: an electrostatic lens that consists of an axially symmetric spherical mesh having a concave shape with respect to a point source, and one or a plurality of axially symmetrical electrodes, and that adjusts the spherical aberration of charged particles generated from the point source; and an axially symmetric deceleration field generating electrode that is placed coaxially with the electrostatic lens.

The present invention relates to a hard X-ray photoelectron spectroscopy (HAXPES) system comprising an X-ray source providing a beam of photons which is directed through the system so as to excite electrons from an illuminated sample. An X-ray tube is connected to a monochromator vacuum chamber in which a crystal is configured to monochromatize and focus the beam onto an illuminated sample. A hemispherical electron energy analyser is mounted onto the analysis chamber. An air gap is provided between the X-ray tube and the monochromator chamber, which air gap is provided with a first radiation trap to shield the ambient air from the radiation when the air gap is illuminated with X-rays from the source.

An input lens is provided which has a large acceptance solid angle for electrons. The input lens is for use in an electron spectrometer and disposed between an electron source producing electrons and an electron analyzer in the electron spectrometer. The input lens has a reference electrode at a reference potential, a slit, first through nth electrodes, where n is an integer equal to or greater than three, arranged between the reference electrode and the slit, and a second mesh attached to the first electrode. The first through nth electrodes are arranged in this order along an optical axis. The second mesh is at a potential higher than the reference potential.

A semiconductor device includes a tube-like structure comprising a plurality of dielectric layers and conductor layers that are disposed on top of one another; a conductor tip integrally formed with a cap conductor layer that is disposed on a top surface of the tube-like structure, wherein the conductor tip extends to a central hole of the tube-like structure; and at least one photodetector formed within a bottom portion of the tube-like structure.

The present invention relates to a hard X-ray photoelectron spectroscopy (HAXPES) system comprising an X-ray source providing a beam of photons which is directed through the system so as to excite electrons from an illuminated sample. An X-ray tube is connected to a monochromator vacuum chamber in which a crystal is configured to monochromatize and focus the beam onto an illuminated sample. A hemispherical electron energy analyser is mounted onto the analysis chamber. An air gap is provided between the X-ray tube and the monochromator chamber, which air gap is provided with a first radiation trap to shield the ambient air from the radiation when the air gap is illuminated with X-rays from the source.

A semiconductor device includes a tube-like structure comprising a plurality of dielectric layers and conductor layers that are disposed on top of one another; a conductor tip integrally formed with a cap conductor layer that is disposed on a top surface of the tube-like structure, wherein the conductor tip extends to a central hole of the tube-like structure; and at least one photodetector formed within a bottom portion of the tube-like structure.

A semiconductor device includes a tube-like structure comprising a plurality of dielectric layers and conductor layers that are disposed on top of one another; a conductor tip integrally formed with a cap conductor layer that is disposed on a top surface of the tube-like structure, wherein the conductor tip extends to a central hole of the tube-like structure; and at least one photodetector formed within a bottom portion of the tube-like structure.