An apparatus comprising a set of pixels configured to shape a beamlet approaching the set of pixels and a set of pixel control members respectively associated with each of the set of pixels, each pixel control member being arranged and configured to apply a signal to the associated pixel for shaping the beamlet.

A method of evaluating a region of interest of a sample including: positioning the sample within in a vacuum chamber of an evaluation tool that includes a scanning electron microscope (SEM) column and a focused ion beam (FIB) column; acquiring a plurality of two-dimensional images of the region of interest by alternating a sequence of delayering the region of interest with a charged particle beam from the FIB column and imaging a surface of the region of interest with the SEM column; generating an initial three-dimensional data cube representing the region of interest by stacking the plurality of two-dimensional images on top of each other in an order in which they were acquired; identifying distortions within the initial three-dimensional data cube; and creating an updated three-dimensional data cube that includes corrections for the identified distortions.

The device for observing permeation and diffusion path of observation target gas includes: a scanning electron microscope 15; an observation target ion detecting unit 20; an observation target gas supply unit 19; a diaphragm-type sample holder 12, to which the sample is mounted in attachable/detachable state, as a diaphragm dividing between the analysis chamber 11 and the observation target gas pipe 14; and a control unit 50. The control unit acquires a SEM image and at the same time detects the observation target gas, which diffuses within the sample and is discharged to the surface of the sample, by electron stimulated desorption, in a state where stress is applied to the sample due to differential pressure generated between the analysis chamber and the observation target gas pipe by supplying the observation target gas, and obtains an ESD image of the observation target ions.

A device may include an electron source, a detector, and a deflector. The electron source may be directed toward a sample area. The detector may receive an electron signal or an electron-induced signal. A deflector may be positioned between the electron source and the sample. The deflector may modulate an intensity of the electron source directed to the sample area according to an electron dose waveform having a continuously variable temporal profile.

A method of determining aberrations in images obtained by a charged-particle beam tool, comprising: a) obtaining two or more images of a sample, wherein each image is obtained at a known relative difference in a measurement condition of the charged-particle beam tool; b) selecting an estimated aberration parameter for the aberrations of a probe profile representing the charged-particle beam used by the charged-particle beam tool; c) evaluating an error function indicative of the difference between the two or more images and two or more estimated images that are a function of the estimated aberration parameter and the known relative difference in the measurement condition; d) updating the estimated aberration parameter; e) performing processes c) and d) iteratively; f) determining the final aberration parameter as the estimated aberration parameter that provides the smallest value of the error function.

During electron beam imaging of a semiconductor wafer, the electron beam is adjusted to a first electron dose/nm.sup.2/time value below a damage threshold for an image frame grab of a site on the semiconductor wafer. Then the electron beam is adjusted to a second electron dose/nm.sup.2/time value different from the first electron dose/nm.sup.2/time value for a second image frame grab of the site. The second electron dose/nm.sup.2/time value can be above the damage threshold.

An improved method and apparatus for enhancing an inspection image in a charged-particle beam inspection system. An improved method for enhancing an inspection image comprises acquiring a plurality of test images of a sample that are obtained at different landing energies, determining distortion levels for the plurality of test images, determining a landing energy level that enables the sample to be in a neutral charge condition during inspection based on the distortion levels, and acquiring an inspection image based on the determined landing energy level.

The present invention enables an overlay error between processors to be measured from a pattern image, the SN ratio of which is low. To this end, the present invention forms a secondary electron image 200 from a detection signal of a secondary electron detector 107, forms a reflected electron image 210 from a detection signal of a reflected electron detector 109, creates a SUMLINE profile 701 that is obtained by adding luminance information in the reflected electron image along the longitudinal direction of a line pattern, and calculates an overlay error of a sample by using position information about an upper layer pattern detected from the secondary electron image and position information about a lower layer pattern that is detected by using an estimation line pattern 801 estimated on the basis of the SUMLINE profile from the reflected electron image.

An interference scanning transmission electron microscope includes an electron source configured to emit an electron beam, a lens configured to irradiate a sample with a converged electron beam, an electron beam bi-prism configured to divide an electron wave through the sample and to superimpose a first electron wave and a second electron wave divided to form an interference fringe, a camera which is a detector configured to detect the interference fringe, and a computer configured to calculate a phase difference between the first electron wave and the second electron wave based on the interference fringe, wherein the electron beam bi-prism is provided between the sample and the detector.

The present invention relates to a method to reduce drift of a sample and/or its image in a microscopy system, wherein the method comprises determining an expected thermal drift of the sample, and compensating for the drift of the sample and/or its image based upon the expected thermal drift. The present invention also relates to a corresponding microscopy system and a computer program product to perform the method according to the present invention.