There is provided a plasma processing device comprising: a chamber; an upper electrode; a showerhead provided below the upper electrode, which divides an internal space of the chamber into a first space between the upper electrode and the showerhead and a second space below the showerhead, and provides a plurality of introduction ports for introducing a gas into the second space and a plurality of openings penetrating the showerhead so that the first space and the second space are in communication with each other; a substrate support portion configured to support a substrate in the second space; an ion trap provided between the upper electrode and the showerhead, wherein the ion trap provides a plurality of through holes arranged not to align with the plurality of openings of the showerhead; a first gas supply portion configured to supply a gas to a region in the first space between the upper electrode and the ion trap; a second gas supply portion configured to supply the showerhead with a gas to be introduced from the plurality of introduction ports into the second space; a power source configured to produce a power for generating plasma, and connected to the upper electrode; and a switch configured to switchably connect the showerhead to one of a ground and the upper electrode.

A semiconductor device manufacturing apparatus according to an embodiment includes: a chamber; a holder provided in the chamber and capable of adsorbing a substrate, the holder including a recess on a surface, a first hole provided in the recess, and a second hole provided in the recess; a first gas passage connected to the first hole; a second gas passage connected to the second hole; a first valve provided in the first gas passage; a second valve provided in the second gas passage; a first gas supply pipe for supplying a first gas to the recess; and a gas discharge pipe for discharging a gas from the recess. The first gas passage and the second gas passage are connected to the first gas supply pipe, or the first gas passage and the second gas passage are connected to the gas discharge pipe.

There is provided a technique that includes forming a modified film by supplying a modifying gas to modify an unmasked deposited film on a substrate; and removing the modified film, including supplying a removal gas activated by plasma and supplying a protective-film-forming gas at least at the same time.

An RF signal supply system for plasma generation includes an RF signal generator, an impedance matching system, and a control module. The RF signal generator includes a control system. The impedance matching system has an input connected to an output of the RF signal generator, an output connected to a plasma processing system, a gamma control capacitor, and a frequency control capacitor. The control module is connected in data communication with each of the RF signal generator and the impedance matching system. The control module is programmed to transmit control signals to the impedance matching system based on corresponding data received from the control system of the RF signal generator, where the control signals direct control of the gamma control capacitor and the frequency control capacitor. The control module is also programmed to transmit data received from the impedance matching system to the control system of the RF signal generator.

An electrostatic chuck includes at least one conductor layer; an electrostatic electrode; and a base body in which the electrostatic electrode is embedded, the base body having a first dielectric layer on which the electrostatic electrode is mounted, the base body having a second dielectric layer stacked on the first dielectric layer with covering the electrostatic electrode. The conductor layer is formed on a surface of the first dielectric layer opposite to a surface on which the electrostatic electrode is mounted. The second dielectric layer has a first surface facing the first dielectric layer and a second surface opposite to the first surface, and the second surface is a placement surface on which a suction target is placed. A relative permittivity of the first dielectric layer is lower than a relative permittivity of the second dielectric layer.

An ion-beam etching apparatus includes: a plasma chamber configured to generate plasma from process gas in the plasma chamber; at least one plasma valve coupled to the plasma chamber; an ion-beam source in communication with the plasma chamber, wherein the ion-beam source is configured to extract ions from the plasma and generate ion-beams when a bias is applied to the ion-beam source; an etching chamber in communication with the ion-beam source, and configured to accommodate an object to be etched; at least one etching valve coupled to the etching chamber; and at least one exhausting pump connected to either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively, wherein the at least one exhausting pump is configured to receive and exhaust radicals in either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively.

Plasma processing apparatus and methods are provided. In one example implementation, the plasma processing apparatus includes a processing chamber. The plasma processing apparatus includes a pedestal disposed in the processing chamber. The pedestal is operable to support a workpiece. The plasma processing apparatus includes a plasma chamber disposed above the processing chamber in a vertical direction. The plasma chamber includes a dielectric sidewall. The plasma processing apparatus includes a separation grid separating the processing chamber from the plasma chamber. The plasma processing apparatus includes a first plasma source proximate the dielectric sidewall. The first plasma source is operable to generate a remote plasma in the plasma chamber above the separation grid. The plasma processing apparatus includes a second plasma source. The second plasma source is operable to generate a direct plasma in the processing chamber below the separation grid.

An apparatus for in-situ etching monitoring in a plasma processing chamber includes a continuous wave broadband light source, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed from the continuous wave broadband light source at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and to direct the reflected light beam to a first light detector, and a controller. The controller is configured to determine a property of the substrate or structures formed thereupon based on a reference light beam and the reflected light beam, and control an etch process based on the determined property. The reference light beam is generated by the illumination system by splitting a portion of the incident light beam and directed to a second light detector.

An apparatus, a system, and a method for in-situ etching monitoring in a plasma processing chamber are provided. The apparatus includes a continuous wave broadband light source to generate incident light beam, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and direct the reflected light beam to a detector, and processing circuitry. The processing circuitry is configured to process the reflected light beam to suppress background light, determine a property of the substrate or structures formed thereupon based on reference light beam and the reflected light beam that are processed to suppress the background light, and control an etch process based on the determined property.

A method of detecting non-uniformity in a plasma in a radio frequency plasma processing system, the method including generating a plasma within a reaction chamber of the radio frequency plasma processing system and detecting electrical signals from the plasma in a frequency range from a frequency of radio frequency power sustaining the plasma to a multiple of about ten times a frequency with a plurality of sensors disposed azimuthally about a chamber symmetry axis of the radio frequency plasma processing system. The method also including comparing the waveforms of the electrical signals picked up from the plasma by the plurality of sensors and determining when a plasma non-uniformity occurs based on the comparing the electrical property of the plasma detected by each of the plurality of sensors.