H01J27/22

Method and device for operating a liquid metal-ion source or liquid metal electron source as well as a liquid metal-ion source or liquid metal electron source
11705299 · 2023-07-18 · ·

The invention relates to a liquid metal-ion beam system (1) or liquid metal electron beam system, including: a conductive emitter electrode (2), a conductive extractor electrode (3) opposite to the emitter electrode (2), a liquid metal reservoir (4) which is fluidically connected to the emitter electrode (2) for transporting liquid metal to the emitter electrode (2), a control unit (5) which is configured to apply a periodically varying operating voltage between emitter electrode (2) and extractor electrode (3).

Method and device for operating a liquid metal-ion source or liquid metal electron source as well as a liquid metal-ion source or liquid metal electron source
11705299 · 2023-07-18 · ·

The invention relates to a liquid metal-ion beam system (1) or liquid metal electron beam system, including: a conductive emitter electrode (2), a conductive extractor electrode (3) opposite to the emitter electrode (2), a liquid metal reservoir (4) which is fluidically connected to the emitter electrode (2) for transporting liquid metal to the emitter electrode (2), a control unit (5) which is configured to apply a periodically varying operating voltage between emitter electrode (2) and extractor electrode (3).

Etching aluminum nitride or aluminum oxide to generate an aluminum ion beam

An ion implantation system, ion source, and method are provided, where an ion source is configured to ionize an aluminum-based ion source material and to form an ion beam and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a noble gas that is in fluid communication with the ion source. The predetermined concentration of fluorine is associated with a predetermined health safety level, such as approximately a 20% maximum concentration of fluorine. The etchant gas mixture can have a co-gas with a concentration less than approximately 5% of argon. The aluminum-based ion source material can be a ceramic member, such as a repeller shaft, a shield, or other member within the ion source.

Etching aluminum nitride or aluminum oxide to generate an aluminum ion beam

An ion implantation system, ion source, and method are provided, where an ion source is configured to ionize an aluminum-based ion source material and to form an ion beam and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a noble gas that is in fluid communication with the ion source. The predetermined concentration of fluorine is associated with a predetermined health safety level, such as approximately a 20% maximum concentration of fluorine. The etchant gas mixture can have a co-gas with a concentration less than approximately 5% of argon. The aluminum-based ion source material can be a ceramic member, such as a repeller shaft, a shield, or other member within the ion source.

High reliability, long lifetime, negative ion source

A negative ion source includes a plasma chamber, a microwave source, a negative ion converter, a magnetic filter and a beam formation mechanism. The plasma chamber contains gas to be ionized. The microwave source transmits microwaves to the plasma chamber to ionize the gas into atomic species including hyperthermal neutral atoms. The negative ion converter converts the hyperthermal neutral atoms to negative ions. The magnetic filter reduces a temperature of electrons provided between the plasma chamber and the negative ion converter. The beam formation mechanism extracts the negative ions.

High reliability, long lifetime, negative ion source

A negative ion source includes a plasma chamber, a microwave source, a negative ion converter, a magnetic filter and a beam formation mechanism. The plasma chamber contains gas to be ionized. The microwave source transmits microwaves to the plasma chamber to ionize the gas into atomic species including hyperthermal neutral atoms. The negative ion converter converts the hyperthermal neutral atoms to negative ions. The magnetic filter reduces a temperature of electrons provided between the plasma chamber and the negative ion converter. The beam formation mechanism extracts the negative ions.

DISCHARGE DEVICE
20230198233 · 2023-06-22 ·

A discharge device includes a connector portion, an electrode portion, and a housing portion. A voltage is applied to the connector portion externally. The electrode portion discharges by boosting and supplying a voltage from the connector portion. The housing portion houses the connector portion and the electrode portion. The housing portion includes a step portion between the connector portion and the electrode portion. The step portion is, for example, a recess.

CESIUM PRIMARY ION SOURCE FOR SECONDARY ION MASS SPECTROMETER

A primary ion source subassembly for use with a secondary ion mass spectrometer may include a unitary graphite ionizer tube and reservoir base. A primary ion source may include a capillary insert defining an ionizer aperture. An ionizer aperture may be centrally arranged in an outwardly protruding conical or frustoconical surface, and may be overlaid with a refractory metal coating or sheath. Parameters including ionizer surface shape, ionizer materials, ionizer temperature, and beam stop plate orifice geometry may be manipulated to eliminate ghost images. A graphite tube gasket with a dual tapered surface may promote sealing of a source material cavity.

METHOD AND DEVICE FOR OPERATING A LIQUID METAL-ION SOURCE OR LIQUID METAL ELECTRON SOURCE AS WELL AS A LIQUID METAL-ION SOURCE OR LIQUID METAL ELECTRON SOURCE
20210383994 · 2021-12-09 ·

The invention relates to a liquid metal-ion beam system (1) or liquid metal electron beam system, comprising: a conductive emitter electrode (2), a conductive extractor electrode (3) opposite to the emitter electrode (2), a liquid metal reservoir (4) which is fluidically connected to the emitter electrode (2) for transporting liquid metal to the emitter electrode (2), a control unit (5) which is configured to apply a periodically varying operating voltage between emitter electrode (2) and extractor electrode (3).

ETCHING ALUMINUM NITRIDE OR ALUMINUM OXIDE TO GENERATE AN ALUMINUM ION BEAM
20220139662 · 2022-05-05 ·

An ion implantation system, ion source, and method are provided, where an ion source is configured to ionize an aluminum-based ion source material and to form an ion beam and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a noble gas that is in fluid communication with the ion source. The predetermined concentration of fluorine is associated with a predetermined health safety level, such as approximately a 20% maximum concentration of fluorine. The etchant gas mixture can have a co-gas with a concentration less than approximately 5% of argon. The aluminum-based ion source material can be a ceramic member, such as a repeller shaft, a shield, or other member within the ion source.