Apparatuses and systems for a die-integrated aspheric mirror are described herein. One apparatus includes an ion trap die including a number of ion locations and an aspheric mirror integrated with the ion trap die.

Apparatuses and systems for a die-integrated aspheric mirror are described herein. One apparatus includes an ion trap die including a number of ion locations and an aspheric mirror integrated with the ion trap die.

Disclosed are systems and methods for generating a beam of charged particles, such as an ion beam. Such a system may comprise an interaction chamber configured to support a target, one or more electromagnetic radiation sources, a sensor, and at least one processor. The one or more electromagnetic radiation sources may be configured to provide a probe beam at a first energy for determining orientation data of the target and a particle-generating beam at a second energy, which is greater than the first energy, for producing a beam of charged particles. The processor may be configured to receive feedback information from the sensor and to cause a change in a relative orientation between the particle-generating beam and the target.

Disclosed are systems and methods for generating a beam of charged particles, such as an ion beam. Such a system may comprise an interaction chamber configured to support a target, one or more electromagnetic radiation sources, a sensor, and at least one processor. The one or more electromagnetic radiation sources may be configured to provide a probe beam at a first energy for determining orientation data of the target and a particle-generating beam at a second energy, which is greater than the first energy, for producing a beam of charged particles. The processor may be configured to receive feedback information from the sensor and to cause a change in a relative orientation between the particle-generating beam and the target.

Apparatuses and systems for a die-integrated aspheric mirror are described herein. One apparatus includes an ion trap die including a number of ion locations and an aspheric mirror integrated with the ion trap die.

Apparatuses and systems for a die-integrated aspheric mirror are described herein. One apparatus includes an ion trap die including a number of ion locations and an aspheric mirror integrated with the ion trap die.

Disclosed are systems and methods for generating a beam of charged particles, such as an ion beam. Such a system may comprise an interaction chamber configured to support a target, one or more electromagnetic radiation sources, a sensor, and at least one processor. The one or more electromagnetic radiation sources may be configured to provide a probe beam at a first energy for determining orientation data of the target and a particle-generating beam at a second energy, which is greater than the first energy, for producing a beam of charged particles. The processor may be configured to receive feedback information from the sensor and to cause a change in a relative orientation between the particle-generating beam and the target.

Disclosed are systems and methods for generating a beam of charged particles, such as an ion beam. Such a system may comprise an interaction chamber configured to support a target, one or more electromagnetic radiation sources, a sensor, and at least one processor. The one or more electromagnetic radiation sources may be configured to provide a probe beam at a first energy for determining orientation data of the target and a particle-generating beam at a second energy, which is greater than the first energy, for producing a beam of charged particles. The processor may be configured to receive feedback information from the sensor and to cause a change in a relative orientation between the particle-generating beam and the target.

Apparatuses and systems for a die-integrated aspheric mirror are described herein. One apparatus includes an ion trap die including a number of ion locations and an aspheric mirror integrated with the ion trap die.

Apparatuses and systems for a die-integrated aspheric mirror are described herein. One apparatus includes an ion trap die including a number of ion locations and an aspheric mirror integrated with the ion trap die.