Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

The electromagnet device comprises an electromagnet mounting frame and a plurality of electromagnets. The electromagnet mounting frame is characterized by including: a top plate for supporting the electromagnet; plural legs for sustaining the top plate; and a cable placement member fixed to the plural legs and placed below the top plate; wherein a cable placement portion in which a power cable for the electromagnet is to be placed so as to extend in a traveling direction of the charged particle beam, is formed between the cable placement member and the top plate; and wherein the cable placement portion has a cable placement width (widthwise inter-leg length) that is a length thereof in a direction perpendicular to the traveling direction of the charged particle beam, and that is longer than a width of the electromagnet in the direction perpendicular to the traveling direction of the charged particle beam.

The electromagnet device comprises an electromagnet mounting frame and a plurality of electromagnets. The electromagnet mounting frame is characterized by including: a top plate for supporting the electromagnet; plural legs for sustaining the top plate; and a cable placement member fixed to the plural legs and placed below the top plate; wherein a cable placement portion in which a power cable for the electromagnet is to be placed so as to extend in a traveling direction of the charged particle beam, is formed between the cable placement member and the top plate; and wherein the cable placement portion has a cable placement width (widthwise inter-leg length) that is a length thereof in a direction perpendicular to the traveling direction of the charged particle beam, and that is longer than a width of the electromagnet in the direction perpendicular to the traveling direction of the charged particle beam.

Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

A computer implemented method of estimating solar irradiance, the method comprising: constructing a reference irradiance set of tuples; constructing a reference predictor set of tuples, merging the reference irradiance set of tuples and the reference predictor set of tuples by matching numerical identifiers for a location for which a global horizontal irradiance exists in the reference irradiance set of tuples and the timestamp with the numerical identifier for a particular location in the reference predictor set of tuples and the timestamp to provide a reference data set of tuples; and estimating the global horizontal irradiance for a specific location and a timestamp by minimizing the least squares error between the reference predictor set of tuples and the reference irradiance set of tuples to provide a set of estimated global horizontal irradiance values for a specific location and timestamp.

Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.