A device for controlling trapped ions includes a substrate. An electrode structure is disposed on the substrate, the electrode structure including DC electrodes and RF electrodes of an ion trap configured to trap ions in a space above the substrate. A first device terminal is disposed on the substrate, the first device terminal being connected via a first electrode connection line to a specific DC electrode. Further, a second device terminal is disposed on the substrate, the second device terminal being connected via a second electrode connection line to the specific DC electrode.

A device for controlling trapped ions includes a substrate. An electrode structure is disposed on the substrate, the electrode structure including DC electrodes and RF electrodes of an ion trap configured to trap ions in a space above the substrate. A first device terminal is disposed on the substrate, the first device terminal being connected via a first electrode connection line to a specific DC electrode. Further, a second device terminal is disposed on the substrate, the second device terminal being connected via a second electrode connection line to the specific DC electrode.

In an ion trap chip, an RF electrode for producing a radio-frequency ion-trapping electric field is formed in one of a plurality of metallization layers formed on a substrate and separated from each other by intermetal dielectric. At least two spans of the RF electrode are suspended between support pillars over a void defined within one or more layers of intermetal dielectric. For each span that is suspended between a first and a second support pillar, an area A.sub.Total and an area A.sub.Supported are defined. A.sub.Total is the total electrode area from an initial edge of the first support pillar to an initial edge of the second support pillar. A.sub.Supported is the electrode area directly underlain by the first support pillar. In each span that is suspended from a first support pillar to a second support pillar, A.sub.Supported is not more than one-half of A.sub.Total.

A dissociation device fragments a precursor ion, producing at least two different product ions with overlapping m/z values in the dissociation device. The dissociation device applies an AC voltage and a DC voltage creating a pseudopotential that traps ions below a threshold m/z including the at least two product ions. The dissociation device receives a charge reducing reagent that causes the trapped at least two product ions to be charge reduced until their m/z values increase above the threshold m/z set by the AC voltage. The increase in the m/z values of the at least two product ions decreases their overlap. The at least two product ions with increased m/z values are transmitted to another device for subsequent mass analysis by applying the DC voltage to the dissociation device relative to a DC voltage applied to the other device.

An ion trap device is disclosed with a method of manufacturing thereof including a substrate, first and second RF electrode rails, first and second DC electrodes on either upper or lower side of substrate, and a laser penetration passage connected to ion trapping zone from outer side of the first or second side of substrate. The substrate includes ion trapping zone in space defined by first and second sides of substrate separated by a distance with reference to width direction of ion trap device. The first and second RF electrode rails are arranged in parallel longitudinally of ion trap device. The first RF electrode is arranged on upper side of first side, the second DC electrode is arranged on lower side of first side, the first DC electrode is arranged on upper side of second side, and the second RF electrode rail is arranged on lower side of second side.

A high-voltage power source for applying high voltage to a nozzle of an ESI ion source includes a charge release assistant section (26) including switch circuits (62 and 65) and other elements for forcing electric charges accumulated at output terminals to be discharged in a polarity-switching operation, whereby the positive/negative switching of the polarity of the output voltage can be quickly performed. In the mass spectrometer according to the present invention, for example, when the voltage applied to the nozzle needs to be changed from Vi to V.sub.2 (where V.sub.1 and V.sub.2 are positive, and V.sub.1>V.sub.2), a voltage control section (20) under the command of a main controller (9) operates a positive voltage generation section (21) and negative voltage generation section (23) so as to temporarily provide a negative output voltage. After a predetermined period of time, the voltage control section operates the positive voltage generation section (21) and negative voltage generation section (23) so as to provide voltage V.sub.2. If the voltage was simply changed from V.sub.1 to V.sub.2, the voltage would decrease slowly and require considerable time for the change. The positive/negative switching of the polarity induces the discharging of the electric charges accumulated at the output terminals, and consequently, the voltage-switching operation from V.sub.1 to V.sub.2 is quickly performed.

A high-voltage power source for applying high voltage to a nozzle of an ESI ion source includes a charge release assistant section (26) including switch circuits (62 and 65) and other elements for forcing electric charges accumulated at output terminals to be discharged in a polarity-switching operation, whereby the positive/negative switching of the polarity of the output voltage can be quickly performed. In the mass spectrometer according to the present invention, for example, when the voltage applied to the nozzle needs to be changed from Vi to V.sub.2 (where V.sub.1 and V.sub.2 are positive, and V.sub.1>V.sub.2), a voltage control section (20) under the command of a main controller (9) operates a positive voltage generation section (21) and negative voltage generation section (23) so as to temporarily provide a negative output voltage. After a predetermined period of time, the voltage control section operates the positive voltage generation section (21) and negative voltage generation section (23) so as to provide voltage V.sub.2. If the voltage was simply changed from V.sub.1 to V.sub.2, the voltage would decrease slowly and require considerable time for the change. The positive/negative switching of the polarity induces the discharging of the electric charges accumulated at the output terminals, and consequently, the voltage-switching operation from V.sub.1 to V.sub.2 is quickly performed.

A dissociation device fragments a precursor ion, producing at least two different product ions with overlapping m/z values in the dissociation device. The dissociation device applies an AC voltage and a DC voltage creating a pseudopotential that traps ions below a threshold m/z including the at least two product ions. The dissociation device receives a charge reducing reagent that causes the trapped at least two product ions to be charge reduced until their m/z values increase above the threshold m/z set by the AC voltage. The increase in the m/z values of the at least two product ions decreases their overlap. The at least two product ions with increased m/z values are transmitted to another device for subsequent mass analysis by applying the DC voltage to the dissociation device relative to a DC voltage applied to the other device.

An ion trap device is disclosed with a method of manufacturing thereof including a substrate, first and second RF electrode rails, first and second DC electrodes on either upper or lower side of substrate, and a laser penetration passage connected to ion trapping zone from outer side of the first or second side of substrate. The substrate includes ion trapping zone in space defined by first and second sides of substrate separated by a distance with reference to width direction of ion trap device. The first and second RF electrode rails are arranged in parallel longitudinally of ion trap device. The first RF electrode is arranged on upper side of first side, the second DC electrode is arranged on lower side of first side, the first DC electrode is arranged on upper side of second side, and the second RF electrode rail is arranged on lower side of second side.

An ion trap device is disclosed with a method of manufacturing thereof including a substrate, first and second RF electrode rails, first and second DC electrodes on either upper or lower side of substrate, and a laser penetration passage connected to ion trapping zone from outer side of the first or second side of substrate. The substrate includes ion trapping zone in space defined by first and second sides of substrate separated by a distance with reference to width direction of ion trap device. The first and second RF electrode rails are arranged in parallel longitudinally of ion trap device. The first RF electrode is arranged on upper side of first side, the second DC electrode is arranged on lower side of first side, the first DC electrode is arranged on upper side of second side, and the second RF electrode rail is arranged on lower side of second side.