It is provided a charged particle beam manipulation device for a plurality of charged particle beamlets, the charged particle beam manipulation device including a lens having a main optical axis, the lens including at least a first array of multipoles, each multipole of the first array of multipoles configured to compensate for a lens deflection force on a respective charged particle beamlet of the plurality of charged particle beamlets, the lens deflection force being a deflection force produced by the lens on the respective charged particle beamlet towards the main optical axis of the lens.

A method for electron microscopy comprises: adjusting at least one of an electron beam and an image beam in such a way that off-axial aberrations inflicted on at least one of the electron beam and the image beam are minimized, the adjusting performed by using a beam adjusting component to obtain at least one modified image beam, wherein the adjusting comprises applying both shifting and tilting to at least one of the electron beam and the image beam and wherein the amount of tilting of at least one of the electron beam and the image beam depends on the amount of shifting of at least one of the electron beam and the image beam respectively and wherein the amount of tilting is computed based on at least one of coma and astigmatism introduced as a consequence of the shift.

The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for adjusting a ribbon beam angle of an ion implantation system. An exemplary ion implantation system includes an ion source configured to generate a ribbon beam, a wafer chuck configured to hold a wafer during implantation by the ribbon beam, a dipole magnet disposed between the ion source and the wafer chuck, and a controller. The dipole magnet includes at least two coils configured to adjust a ribbon beam angle of the ribbon beam at one or more locations along a path of the ribbon beam between the ion source and the wafer held in the wafer chuck. The controller is configured to control the ion source, the wafer chuck, and the dipole magnet.

A particle beam system includes: a multi-beam particle source configured to generate a multiplicity of particle beams; an imaging optical unit configured to image an object plane in particle-optical fashion into an image plane and direct the multiplicity of particle beams on the image plane; and a field generating arrangement configured to generate electric and/or magnetic deflection fields of adjustable strength in regions close to the object plane. The particle beams are deflected in operation by the deflection fields through deflection angles that depend on the strength of the deflection fields.

A scanning transmission electron microscope that scans a specimen with an electron probe to acquire an image. The scanning transmission electron microscope includes: an optical system which includes a condenser lens and an objective lens; an imaging device which is arranged on a back focal plane or a plane conjugate to the back focal plane of the objective lens and which is capable of photographing a Ronchigram; and a control unit which performs adjustment of the optical system. The control unit is configured or programed to: acquire an image of a change in a Ronchigram that is attributable to a change in a relative positional relationship between the specimen and the electron probe; and determine a center of the Ronchigram based on the image of the change in the Ronchigram.

Systems and methods for in-die metrology using target design patterns are provided. These systems and methods include selecting a target design pattern based on design data representing the design of an integrated circuit, providing design data indicative of the target design pattern to enable design data derived from the target design pattern to be added to second design data, wherein the second design data is based on the first design data. Systems and methods can further include causing structures derived from the second design data to be printed on a wafer, inspecting the structures on the wafer using a charged-particle beam tool, and identifying metrology data or process defects based on the inspection. In some embodiments the systems and methods further include causing the charged-particle beam tool, the second design data, a scanner, or photolithography equipment to be adjusted based on the identified metrology data or process defects.

A method and an apparatus for generating a particle wave carrying an electric charge is provided. The method comprises: on the basis of waveform information pre-stored in a waveform storage module, generating a corresponding digital waveform signal; the waveform information comprising amplitude and phase; on the basis of a digital-to-analog conversion module connected to the waveform storage module, converting the digital waveform signal having a pre-set phase into an analog waveform signal; on the basis of a power amplification module connected to the digital-to-analog conversion module, performing power amplification on the analog waveform signal; on the basis of a high-voltage generator connected to the power amplification module, performing high-voltage amplification on the power signal of the analog waveform signal; and by means of a quasi-continuous emission electrode connected to the high-voltage generator, emitting a charged particle wave on the basis of the analog waveform voltage signal.

Provided is an electron beam irradiation apparatus including: an aligner configured to perform an alignment of an electron beam by deflecting the electron beam; a deflector having a plurality of electrodes and configured to deflect the electron beam after passing through the aligner; and an adjuster configured to adjust deflection caused by the aligner, wherein the adjuster is configured to perform, on each of the plurality of electrodes, detecting an image of the electron beam by applying a test voltage to one of the plurality of electrodes and applying a reference voltage to the other electrodes, determine a position shift of the electron beam based on each position of the image of the electron beam corresponding to each electrode, and adjust deflection of the aligner so as to cancel the position shift of the electron beam.

An ion gun includes a confinement vessel defining a chamber therein; a plasma source configured to provide ions in the chamber; and at least one acceleration and focusing electrode disposed within the chamber and positioned to receive ions from the plasma source, and to accelerate and focus the ions received to be delivered to an underlying surface. The at least one acceleration and focusing electrode is structured to provide an aperture therethrough to provide optical access to a high numerical aperture optical device.

The invention relates to a method for electron microscopy. The method comprises providing an electron microscope, generating an electron beam and an image beam, adjusting one of the beam and of the beam and the image beam to reduce off-axial aberrations and correcting a diffraction pattern of the resulting modified beam. The invention also relates to a method for reducing throughput time in a sample image acquisition session in transmission electron microscopy. The method comprises providing an electron microscope, generating a beam and an image beam, adjusting one of the two to reduce off-axial aberrations and filtering the resulting modified image beam. The invention further relates to an electron microscope and to a non-transient computer-readable medium with a computer program for carrying out the methods.