A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A conductive plate in a same region of the positive column opposite the stage is used to measure the surface floating potential of the stage. A control loop can be activated throughout various processing steps to maintain the surface floating potential of the stage to the reference ground potential. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.

A control circuit for outputting a direct current (DC) signal in the form of a pulsed signal includes a switch circuit having a first terminal, a second terminal, a third terminal, a fourth terminal, a first control terminal, and a second control terminal, wherein the first terminal and the second terminal are input terminals of the DC signal, the third terminal and the fourth terminal are output terminals of the pulsed signal, the first control terminal and the second control terminal receive a first signal or a second signal to control outputting the pulsed signal, in response to the first control terminal and the second control terminal receiving the first signal, the third terminal and the fourth terminal output the pulsed signal, and in response to the first control terminal and the second control terminal receiving the second signal, the third terminal and the fourth terminal stop outputting the pulsed signal; and an energy storage circuit having two terminals connected to the first terminal and the second terminal of the switch circuit to store residual electric energy of the switch circuit when the switch circuit does not output the pulsed signal. The control circuit reduces the oscillation the voltage of occurred at the end of each pulse, and improving the accuracy of controlling the plasma energy and density used in the semiconductor processes.

Certain configurations of plasma discharge chambers and plasma ionization sources comprising a plasma discharge chamber are described. In some examples, the discharge chamber comprises a conductive area and is configured to sustain a plasma discharge within the discharge chamber. In other examples, the discharge chamber comprises at least one inlet configured to receive a plasma gas and at least one outlet configured to provide ionized analyte from the discharge chamber. Systems and methods using the discharge chambers are also described.

An ignition method of a plasma chamber includes steps of: (a) starting softly an ignition voltage to a first voltage, (b) decreasing the magnitude of the ignition voltage to a second voltage after a first ignition time, (c) increasing the magnitude of the ignition voltage to the first voltage after a second ignition time, and (d) repeating the step (b) and the step (c) until the ignition is successful.

This disclosure describes systems, methods, and apparatus for waveform control, comprising: a power supply having an input terminal, and at least one output terminal for coupling to a load; a controller; a variable inductor coupled to at least one of the output terminals, the variable inductor comprising a first magnetic core having a plurality of arms, including at least a first inductor arm and a first control arm, wherein an inductance winding having one or more turns is wound around the first inductor arm, and wherein a first control winding comprising one or more turns is wound around the first control arm; and a DC current source coupled to the first control arm and the controller, the controller configured to adjust a DC bias applied by the DC current source to the first control arm to control an output waveform at the at least one output terminal.

Disclosed is a substrate treating apparatus. The substrate treating apparatus includes an index part having a load port, and a process executing part that receives a substrate from the index part and treats the substrate, the load port includes a housing having an interior space, a seating part disposed on an upper side of the housing, and on which a container that receives a substrate type sensor is positioned, and a charging unit that charges a power source device installed in the container in a wireless charging scheme.

Embodiments described herein are applicable for use in all types of plasma assisted or plasma enhanced processing chambers and also for methods of plasma assisted or plasma enhanced processing of a substrate. More specifically, embodiments of this disclosure include a broadband filter assembly, also referred to herein as a filter assembly, that is configured to reduce and/or prevent RF leakage currents from being transferred from one or more RF driven components to a ground through other electrical components that are directly or indirectly electrically coupled to the RF driven components and ground with high input impedance (low current loss) making it compatible with shaped DC pulse bias applications.

A plasma processing apparatus includes a container; a stage disposed in the container and including an electrode; a plasma source that generates plasma in the container; a bias power supply that periodically supplies a pulsed negative DC voltage to the electrode; an edge ring disposed to surround a substrate placed on the stage; and a DC power supply that supplies a DC voltage to the edge ring. The DC power supply supplies a first DC voltage in a first time period when the pulsed negative DC voltage is not supplied to the electrode, and supplies a second DC voltage in a second time period when the pulsed negative DC voltage is supplied to the electrode.

An apparatus may include a main chamber, a substrate holder, disposed in a lower region of the main chamber, and defining a substrate region, as well as an RF applicator, disposed adjacent an upper region of the main chamber, to generate an upper plasma within the upper region. The apparatus may further include a central chamber structure, disposed in a central portion of the main chamber, where the central chamber structure is disposed to shield at least a portion of the substrate position from the upper plasma. The apparatus may include a bias source, electrically coupled between the central chamber structure and the substrate holder, to generate a glow discharge plasma in the central portion of the main chamber, wherein the substrate region faces the glow discharge region.