Disclosed is a substrate treating apparatus. The substrate treating apparatus includes an index part having a load port, and a process executing part that receives a substrate from the index part and treats the substrate, the load port includes a housing having an interior space, a seating part disposed on an upper side of the housing, and on which a container that receives a substrate type sensor is positioned, and a charging unit that charges a power source device installed in the container in a wireless charging scheme.

Embodiments described herein are applicable for use in all types of plasma assisted or plasma enhanced processing chambers and also for methods of plasma assisted or plasma enhanced processing of a substrate. More specifically, embodiments of this disclosure include a broadband filter assembly, also referred to herein as a filter assembly, that is configured to reduce and/or prevent RF leakage currents from being transferred from one or more RF driven components to a ground through other electrical components that are directly or indirectly electrically coupled to the RF driven components and ground with high input impedance (low current loss) making it compatible with shaped DC pulse bias applications.

Disclosed is a plasma device which includes: a base including a power supply unit configured to receive electric power and form an AC signal, a gas flow rate adjustment unit configured to receive gas and control a flow rate of output gas, an input unit configured to receive an input of a user, and a controller configured to control the power supply unit and the gas flow rate adjustment unit according to the input; and a handpiece including a boosting transformer configured to boost the AC signal, an electrode structure configured to receive the boosted AC signal and the gas and form plasma, a switch configured to receive a plasma discharge signal of the user, and a nozzle configured to discharge the formed plasma, wherein the handpiece is connected to the base via a connector and is exchangeable.

An electric discharge generator and power supply device of electric discharge generator includes a radical gas generation apparatus, a process chamber apparatus, and an n-phase inverter power supply device. The radical gas generation apparatus is located adjacent to the process chamber apparatus. The radical gas generation apparatus includes a plurality of (n) discharge cells. The n-phase inverter power supply device includes a power supply circuit configuration offering a means to control output of n-phase alternating current voltages and variably controls, according to positions of the plurality of discharge cells, the alternating current voltages of different phases.

A control system of a full-automatic cold plasma seed processor comprises a human-machine interaction interface, a PLC, a transport module, a vacuum degree module, an ionization module, and an energy supply module. The human-machine interaction interface is in a communications connection with the PLC by using a serial port. The energy supply module supplies a power source required by another module in a system. The PLC controls a transport rate of seeds by using the transport module, controls, by using the vacuum degree module, the vacuum degree of the system to reach a dynamic balance, and at last, controls the ionization time and the ionization power by using the ionization module, so as to adapt to processing requirements of different seeds and achieve an optimal processing effect. The control system can automatically process seeds of various grains, and brings short processing time and low cost.

The present invention relates to an ethylene disposal apparatus comprising: a plasma discharge part having an inlet and an outlet and being filled with an adsorbent; and an electrode part for generating plasma inside the plasma discharge part, wherein the adsorbent has a catalyst supported thereon. The present invention relates to an ethylene disposal method using the ethylene disposal apparatus, the method comprising the steps of: (a) injecting ethylene-containing gas into a plasma discharge part filled with the adsorbent; (b) applying voltage to the electrode part and generating plasma in the plasma discharge part, thereby degrading the injected ethylene; and (c) cooling the plasma discharge part.

An electric discharge generator and power supply device of electric discharge generator includes a radical gas generation apparatus, a process chamber apparatus, and an n-phase inverter power supply device. The radical gas generation apparatus is located adjacent to the process chamber apparatus. The radical gas generation apparatus includes a plurality of (n) discharge cells. The n-phase inverter power supply device includes a power supply circuit configuration offering a means to control output of n-phase alternating current voltages and variably controls, according to positions of the plurality of discharge cells, the alternating current voltages of different phases.

An in-chamber plasma source in a deposition reactor system includes an array of microcavity or microchannel plasma devices having a first electrode and a second electrode isolated from plasma in microcavities or microchannels. An inlet provides connection to deposition precursor. A region interacts deposition precursor with plasma. An outlet directs precursor dissociated with the plasma onto a substrate for deposition. A reactor system includes a substrate holder across from the outlet, a chamber enclosing the in-chamber plasma source and the substrate holder, an exhaust from the chamber, and conduit supplying precursors from sources or bubblers to the inlet. A reactor system can conduct plasma enhanced atomic layer deposition at high pressures and is capable of forming a complete layer in a single cycle.

A method of plasma processing a substrate in a plasma chamber is provided. The method includes the steps of supplying a power supply signal to electrodes arranged within the plasma chamber in order to form a plasma in the plasma chamber, monitoring at least one parameter related to the plasma processing, determining a feature related to the at least one monitored parameter, and adjusting the power supply signal during the plasma processing to modify, in particular reduce, the feature. The modification of the feature eliminates or mitigates formation of crazing on the substrate.

In a plasma treatment arrangement for carrying out dielectrically impeded plasma discharge onto a surface to be treated having a flat electrode unit (4) which has a treatment side, and a control unit (11) which supplies at least one electrode (19) of the electrode unit (4) with a high-voltage AC potential for a power which is required for plasma generation between the at least one electrode (19) and a counterelectrode which forms a reference potential, wherein the at least one electrode (19) which receives the high-voltage AC potential is shielded with a flat dielectric (7), at least on the treatment side, and wherein the flat electrode unit is designed to reduce the size of its support area on the surface to be treated for the purpose of adaptation to the size of the surface to be treated, the adaptation of the support area of the flat electrode unit (4) becomes possible in an unproblematical manner on account of the control unit (11) having a device (14) for determining the size of the adapted support area and a control device for adjusting the power to be output to the at least one electrode (19) in accordance with the determined size of the support area.