A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

A plasma processing, apparatus of an embodiment includes a chamber, an introducing part, a first power source, a holder, an electrode, and a second power source. The introducing pat introduces gas into the chamber. The first power source outputs a first voltage for generating ions from the gas. The holder holds a substrate. The electrode is opposite to the ions across the substrate, and has a surface not parallel to the substrate. The second power source applies a second voltage to the electrode. The second voltage has a frequency lower than the frequency of the first voltage and Introduces die ions to the substrate.

In accordance with an exemplary embodiment of the present invention, an apparatus for processing substrate comprising: a support plate; an antenna disposed in parallel to one surface of the support plate and having 1st to n-th turns (n=an integer greater than 3) wound along one direction from an inner end; and a distance control unit capable of adjusting separation distances formed between the 1st to n-th turns.

A chamber component for a processing chamber is disclosed herein. In one embodiment, a chamber component for a processing chamber includes a component part body having unitary monolithic construction. The component part body has a textured surface. The textured surface includes a plurality of independent engineered macro features integrally formed with the component part body. The engineered macro features include a macro feature body extending from the textured surface.

A method of generating a plasma is provided. The method uses a plasma antenna having a length, the method including driving an electrical conductor of the plasma antenna with RF frequency current to generate plasma both at a first location and at a second location spaced apart from the first location in a direction along the length of the antenna, there being a region adjacent to the antenna between the first location and the second location at which the generation of plasma is curtailed as a result of at least one shield member.

Proposed are a method and a system for removing L-FC in a plasma etching process, in which L-FC, which is condensed on a wafer, an electrode, a substrate, a head, or the like, is removed by using infrared or ultraviolet rays in a plasma etching process using an L-FC precursor.

Embodiments disclosed herein include a monolithic source array. In an embodiment, the monolithic source array comprises a dielectric plate having a first surface and a second surface opposite from the first surface. The monolithic source array may further comprise a plurality of protrusions that extend out from the first surface of the dielectric plate, wherein the plurality of protrusions and the dielectric plate are a monolithic structure.

A deposition apparatus including: a processing chamber; a rotary table provided in the processing chamber; a first processing region provided at a predetermined position in a circumferential direction of the rotary table; a second processing region provided downstream of the first processing region in the circumferential direction of the rotary table; a third processing region provided downstream of the second processing region in the circumferential direction of the rotary table; a first heater provided above the rotary table in the second processing region; and a plasma generator. The plasma generator includes: a protrusion having a longitudinally elongated shape in a planar view extending along a radius of the rotary table in a portion of an upper surface of the processing chamber, and protruding upward from the upper surface; and a coil wound along a side surface of the protrusion and has a longitudinally elongated shape in a planar view.

A processing apparatus is provided. The processing apparatus includes a chamber and a carrier that is positioned in the chamber for holding a substrate. The processing apparatus further includes a gas inlet connected to the chamber. The gas inlet is configured to supply a process gas into the chamber. The processing apparatus also includes a coil module positioned around the chamber and configured to transfer the process gas into plasma. In addition, the processing apparatus includes a filter disposed in the chamber. The coil module is configured to change a position of the plasma between a first position and a second position, the first position is located between the gas inlet and the filter, and the second position is located between the filter and the carrier.

A model learning unit learns a prediction model on the basis of learning data, a target setting unit sets a target output parameter value by interpolating between a goal output parameter value and an output parameter value which is the closest to the goal output parameter value in output parameter values in the learning data, a processing condition search unit estimates input parameter values which corresponds to the goal output parameter value and the target output parameter value, a model learning unit updates the prediction model by using a set of the estimated input parameter value and an output parameter value which is a result of processing that a processing device performs as additional learning data.