A radio frequency (RF) power generation system includes a RF power source that generates a RF output signal delivered to a load. A RF power controller is configured to generate a control signal to vary the RF output signal. The controller adjusts a parameter associated with the RF output signal, and the parameter is controlled in accordance with a trigger signal. The parameter is adjusted in accordance with a cost function, and the cost function is determined by intruding a perturbation into an actuator that affects the cost function. The actuator may control an external RF output signal, and the trigger signal may vary in accordance with the external RF output signal.

An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.

A RF generator includes a RF power source and a RF control module coupled to the RF power source. The RF control module is configured to generate at least one control signal to vary a respective at least one of an RF output signal from the RF power source or an impedance between the RF power source and a load. The RF output signal includes a RF signal modulated by a pulse signal, and the RF control module is further configured to adjust the at least one control signal to vary at least one of an amplitude or a frequency of the RF output signal or the impedance between the RF power source and the load to control a shape of the pulse signal. The at least one of the amplitude, the frequency, or the impedance is adjusted in accordance with respective feedforward adjustments that vary in accordance with a respective sensed pulse parameter detected between a matching network and the load.

A variable frequency and non-sinusoidal power generator includes a pulse module circuit, a slope module circuit, and first and second cooling systems. The pulse module circuit and the slope module circuit includes control switches, and generates at least one of a output currents and a output voltages by selectively turning on/off the control switches based on control signals. The first and second cooling systems are disposed at first and second sides of the control switches. A bias power having a variable frequency and a non-sinusoidal waveform is generated based on the control signals, at least one of the output currents and the output voltages.

In some implementations, a method for performing a plasma process in a chamber is provided, including: supplying a process gas to the chamber; applying pulsed RF power to the process gas in the chamber, the pulsed RF power being provided at a predefined frequency, wherein the applying of the pulsed RF power to the process gas generates a plasma in the chamber; during the applying of the RF power, applying a pulsed DC current to a magnetic coil that is disposed over the chamber, wherein the pulsed DC current is provided at the predefined frequency.

The inventive concept provides a substrate processing apparatus. The substrate processing apparatus may include a chamber having an interior space, a support unit that supports a substrate in the interior space, a ring unit disposed on an edge region of the support unit when viewed from above, an impedance control unit electrically connected to the ring unit to control a flow or density of plasma in an edge region of the substrate and a filter unit disposed between the ring unit and the impedance control unit.

A matching unit controller working in combination with a matching unit for a plasma processing machine is described. In one example, the controller has a master controller application and acts as a local master in the matching unit. In one example, the controller gathers data from the input and output sensors and feeds the data to an intelligent algorithm. In one example, the output from the algorithm is used to set the matching unit capacitor positions. In one example, the controller also has a slave controller application to communicate with a master controller of the plasma processing machine.

Methods, systems, and computer programs are presented for manufacturing a showerhead for a semiconductor manufacturing system. One method includes an operation for drilling first holes on a faceplate made of a first material, where the first holes have a first diameter. Further, the method includes an operation for cladding the first holes and the faceplate with a second material to cover the first holes and the faceplate with the second material. Further yet, the method includes drilling second holes concentric with the first holes resulting in a part with holes coated with the second material. The second holes have a second diameter that is smaller than the first diameter. Additionally, the method includes an operation for creating the showerhead utilizing the part, where gas is deliverable through the second holes of the faceplate in the showerhead.

A substrate processing system for processing a substrate within a processing chamber includes a matching network, a tuning circuit, and a controller. The matching network receives a first RF signal having a first frequency from a RF generator and impedance matches an input of the matching network to an output of the RF generator. The tuning circuit is distinct from the matching network and includes a circuit component having a first impedance. The tuning circuit receives an output of the matching network and outputs a second RF signal to a first electrode in a substrate support. The controller determines a target impedance for the circuit component, and based on the target impedance, signal the RF generator to adjust the first frequency of the first RF signal received at the matching network to a second frequency to alter the first impedance of the circuit component to match the target impedance.

Disclosed is a radio-frequency plasma generating system including a radio-frequency generator and a plasma source, the radio-frequency generator being inductively or capacitively coupled to the plasma source through a resonant electric circuit, the radio-frequency generator being adapted to receive direct current power from a direct current power supply and for generating radio-frequency power at a frequency f, the radio-frequency power including a reactive radio-frequency power oscillating in the resonant electric circuit and an active radio-frequency power absorbed by the plasma. The radio-frequency plasma generating system includes a unit for measuring an efficiency of conversion E of direct-current power to active radio-frequency power absorbed by the plasma and a unit for adjusting the frequency f as a function of the measured efficiency of conversion E to maintain the efficiency of conversion E in a predetermined range within a RF plasma operational range.