A plasma processing apparatus includes: a processing container; a ceiling plate that constitutes a ceiling wall of the processing container, is formed of a first dielectric, and has an opening formed in the first dielectric; at least one transmissive window disposed in the opening and formed of a second dielectric having a second permittivity greater than a first permittivity of the first dielectric; and at least one electromagnetic wave supplier configured to supply electromagnetic waves toward the at least one transmissive window.

An artificial diamond plasma production device has a reaction chamber, a microwave emitting module, and a microwave lens. The microwave emitting module emits a circularly-polarized microwave into the reaction chamber. The microwave emitting module has a polarizing tube, a directing tube, a first waveguide, and a first linearly-polarized microwave source serially connected along a microwave traveling path. The microwave emitting module further has a second waveguide and a first matched load. The polarizing tube is configured to convert a linearly-polarized microwave into a circularly-polarized microwave or the other way round depending on traveling direction of the microwave. The directing tube has a first opening and a second opening which face toward different directions. The first waveguide is connected to the first opening. The first matched load is connected to the second opening via the second waveguide. Therefore, reflected microwave can be channeled out of the reaction chamber.

At a time of a wafer processing by a plasma processing apparatus, in order to prevent first radio frequency power from being diverted into an output line of a second radio frequency power supply via plasma, the plasma processing apparatus includes: a processing chamber in which a sample is plasma-processed; a sample stage that includes a first electrode and a second electrode disposed outside the first electrode and on which the sample is placed; a first radio frequency power supply configured to supply first radio frequency power to the first electrode via a first matching device and a first transmission path; and a second radio frequency power supply configured to supply second radio frequency power to the second electrode via a second matching device and a second transmission path. The plasma processing apparatus further includes a control device configured to control the first radio frequency power supply to supply the first radio frequency power to the sample stage when a preset value of the second matching device is a predetermined value. The predetermined value is a value that makes an impedance of the second transmission path an impedance at which the radio frequency power is not detected by the second matching device.

In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H.sub.2O and can provide at least about 30 cfm of air.

In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H.sub.2O and can provide at least about 30 cfm of air.

A plasma processing apparatus includes: a processing container including a substrate support; a shower head that supplies active species of a first gas into the processing container; a first dissociation space through which the active species is supplied to the shower head; and a resonator that supplies electromagnetic waves in a VHF band or higher to the first dissociation space. The resonator includes: a cylindrical body; a gas pipe which passes through an interior of the cylindrical body, is provided along a central axis direction of the cylindrical body, and includes gas holes through which the first gas is supplied into the first dissociation space; and a dielectric window including a central portion through which the end portion of the gas pipe passes, and configured to seal a space between the gas pipe and the cylindrical body and cause the electromagnetic waves to transmit through the first dissociation space.

There is provided a plasma source comprising a first chamber configured to form a flat first plasma generation space, and having a first wall and a second wall, a gas supply configured to supply gas into the first chamber, an electromagnetic wave supply having a dielectric window that is provided in an opening provided in the first wall to face the first plasma generation space, and configured to supply an electromagnetic wave through the dielectric window into the first chamber. The plasma source comprises a plasma supply configured to supply radicals contained in plasma that is generated from the gas supplied into the first chamber by the electromagnetic wave to an outside of the first chamber, and a plasma ignition source provided in the first chamber to protrude from an inner wall of the second wall facing the dielectric window and to be separated from the dielectric window.

A plasma source comprising: a plasma generator including a first wall having an opening and a second wall facing the first wall, and forming a plasma generating space; a dielectric window disposed on the first wall to block the opening and configured to transmit electromagnetic waves to the plasma generating space; and a protruding portion disposed on the second wall, protruding from the second wall to be close to the dielectric window, and containing a conductor at least partially. The protruding portion has a gas hole that opens toward the dielectric window.

An apparatus for processing a substrate is provided. The apparatus comprises a process chamber configured to define an interior space for internally processing a substrate, a substrate support unit configured to support the substrate in the interior space, a dielectric plate disposed above the substrate support unit, an antenna unit disposed over or above the dielectric plate, shaped into a frustum, having a truncated cone or prismoidal shape, and including a through-hole, a microwave application unit configured to apply microwaves to the antenna unit, and a slow-wave plate disposed on the antenna unit.

To reduce the damage caused due to the degradation of sealing material without complicating the structure of the vacuum sealing material of the vacuum container and to perform cleaning without affecting the lifetime of the sealing material in a plasma processing apparatus, this invention provides a plasma processing apparatus in which a window portion and a processing chamber are coupled to each other with an elastomeric sealing material sandwiched therebetween, and a sealing material is arranged at a position where a ratio of a distance from the inner wall surface of a processing chamber in an interstice portion to the sealing material with respect to the interstice between the window portion and the processing chamber having the sealing material sandwiched there between is 3 or more, in a vacuum state with the air exhausted from the processing chamber by the vacuum exhaust unit.