The inventive concept provides a substrate treating apparatus. In an embodiment the substrate treating apparatus includes a process chamber having a treating space therein for treating a substrate; a substrate support unit configured to support the substrate in the treating space; and a microwave application unit configured to apply a microwave to the treating space, and wherein the microwave application unit comprises a microwave power generator based on a solid state device.

A microwave heating device includes a variable frequency microwave power supply, a waveguide launcher, and a fixture to contain a material to be heated, with the fixture located directly adjacent to the end of the launcher. All heating occurs in the near-field region, i.e., no cavity modes or standing waves are established within the fixture. This condition may be insured by keeping the thickness of the fixture or workpiece under one wavelength (at all microwave frequencies being used). The launcher is preferably a horn configured to spread the microwave power laterally over a selected area while maintaining a single propagating mode. The invention may be used to enhance catalytic reactions for research and other purposes. Alternatively, the invention may be configured to perform spot curing or repair operations involving adhesives and composites.

High frequency heating device is provided with heater disposed adjacent to mount base on which object to be heated is mounted and having a plurality of surface wave transmission lines electrically isolated from each other, and first and second high frequency power generators, each of which generates high frequency power having different frequency. Surface wave transmission lines receive at least one of the high frequency power generated by first high frequency power generator and the high frequency power generated by second high frequency power generator. According to this aspect, interference between the high frequency powers is not occurred and electromagnetic field coupling is not occurred. As a result, in the high frequency heating device provided with the surface wave transmission line using a periodic structure, uneven baking caused by the electromagnetic field coupling can be suppressed, and a heating state of an object to be heated can be easily controlled.

Embodiments of this application discloses a plasma processing method performed in a plasma processing apparatus having a plurality of plasma sources, the plasma processing method comprising: controlling each of the plasma sources so that at least one plasma source of the plurality of plasma sources is in a first state referring an OFF-state or a power state of a first level and the remaining plasma sources are in a second state referring an ON-state or a power state of a second level higher than the power state of the first level; and generating plasma from a processing gas with power output from the plurality of plasma sources, and processing a substrate, wherein said controlling of each of the plasma sources includes repeatedly controlling so that the plasma source of the first state among the plurality of plasma sources is sequentially transitioned.

A microwave heating device includes a variable frequency microwave power supply, a waveguide launcher, and a fixture to contain a material to be heated, with the fixture located directly adjacent to the end of the launcher. All heating occurs in the near-field region, i.e., no cavity modes or standing waves are established within the fixture. This condition may be insured by keeping the thickness of the fixture or workpiece under one wavelength (at all microwave frequencies being used). The launcher is preferably a horn configured to spread the microwave power laterally over a selected area while maintaining a single propagating mode. The invention may be used to enhance catalytic reactions for research and other purposes. Alternatively, the invention may be configured to perform spot curing or repair operations involving adhesives and composites.

A device includes a microwave generation unit that averages the first measured values and the second measured values at a predetermined movement average time and a predetermined sampling interval, and controls the microwave such that a value obtained by subtracting the averaged second measured value from the averaged first measured value comes close to the setting power, and in which the predetermined movement average time is 60 μs or less, and a relationship of y≥78.178x.sup.0.1775 is satisfied when the predetermined sampling interval is indicated by x, and the predetermined movement average time is indicated by y.

A plasma processing apparatus includes a processing vessel; a carrier wave group generating unit configured to generate a carrier wave group including multiple carrier waves having different frequencies belonging to a preset frequency band centered around a predetermined center frequency; and a plasma generating unit configured to generate plasma within the processing vessel by using the carrier wave group.

A microwave plasma device includes a treatment space and a number of two or more microwave semiconductors. The microwave semiconductors are attached to the treatment space in such a way that the microwaves of a microwave semiconductor only interfere with the microwaves of other microwave semiconductors when in the treatment space.

Exemplary systems according to embodiments of the present technology include a housing that defines a process chamber and a waveguide cavity. A first conductive plate is disposed within the housing. The system also includes a second conductive plate positioned within the housing and at least partially defining the waveguide cavity. The second conductive plate is vertically translatable within the housing to adjust a distance between the first conductive plate and the second conductive plate to affect modes of electromagnetic radiation propagating within the waveguide cavity. The systems also include one or more electronics sets that are configured to transmit the electromagnetic radiation into the waveguide cavity to produce plasma from at least one process gas delivered within the process chamber.

Detection accuracy of a power of a progressive wave and detection accuracy of a power of a reflection wave can be improved. In a plasma processing apparatus, a first directional coupler is provided in a first waveguide which is configured to connect a microwave generating unit and a first port of a circulator. A first detector is connected to the first directional coupler. A second port of the circulator is connected to a plasma generating unit via a second waveguide. Further, a second directional coupler is provided in a third waveguide which is configured to connect a third port of the circulator and a dummy load. A second detector is connected to the second directional coupler.