The present disclosure relates to a semiconductor device manufacturing system. The semiconductor device manufacturing system can include a chamber and an ion source in the chamber. The ion source can include an outlet. The ion source can be configured to generate a particle beam. The semiconductor device manufacturing system can further include a grid structure proximate to the outlet of the ion source and configured to manipulate the particle beam. A first portion of the grid structure can be electrically insulated from a second portion of the grid structure.

A segmented edge protection shield for plasma dicing a wafer. The segmented edge protection shield includes an outer structure and a plurality of plasma shield edge segments. The outer structure defines an interior annular edge configured to correspond to the circumferential edge of the wafer. Each one of the plurality of plasma shield edge segments is defined by an inner edge and side edges. The inner edge is interior to and concentric to the annular edge of the outer structure. The side edges extend between the inner edge and the annular edge.

A semiconductor processing system processes semiconductor wafers in a process chamber. The process chamber includes semiconductor process equipment for performing semiconductor processes within the chamber. The process chamber includes a heat pipe integrated with one or more components of the process chamber. The heat pipe effectively transfers heat from within the chamber to an exterior of the chamber.

A plasma etching method using a Faraday cage, which effectively produces a blazed grating pattern.

A method of generating a plasma is provided. The method uses a plasma antenna having a length, the method including driving an electrical conductor of the plasma antenna with RF frequency current to generate plasma both at a first location and at a second location spaced apart from the first location in a direction along the length of the antenna, there being a region adjacent to the antenna between the first location and the second location at which the generation of plasma is curtailed as a result of at least one shield member.

A plasma processing apparatus includes: a chamber; an introducer installed such that electromagnetic waves are introduced into the chamber from the introducer; and a choke structure installed on a wall of the chamber and configured to suppress propagation of the electromagnetic waves downstream along an inner wall surface of the chamber from a location at which the choke structure is installed. The choke structure includes: a first portion having a slit shape and connected to a space within the chamber; and a second portion extending from the first portion in the wall of the chamber. A length of the second portion along a direction of an electric field of the electromagnetic waves in the second portion is longer than a length of the first portion along a direction of an electric field of the electromagnetic waves in the first portion.

A chamber is provided. The chamber includes a Faraday shield positioned above a substrate support of the chamber. A dielectric window is disposed over the Faraday shield, and the dielectric window has a center opening. A hub having an internal plenum for passing a flow of fluid received from an input conduit and removing the flow of fluid from an output conduit is further provided. The hub has sidewalls and a center cavity inside of the sidewalls for an optical probe, and the internal plenum is disposed in the sidewalls. The hub has an interface surface that is in physical contact with a back side of the Faraday shield. The physical contact provides for a thermal couple to the Faraday shield at a center region around said center opening, and an outer surface of the sidewalls of the hub are disposed within the center opening of the dielectric window.

The present disclosure provides a shielding mechanism and a thin-film-deposition equipment using the same, wherein the shielding mechanism includes two shield members and a driver. The driver includes a motor and a shaft seal. The motor interconnects the two shield members via the shaft seal, and such that to drive the two shield members to sway in opposite directions and to switch between an open state and a shielding state. Furthermore, each of the two shield members is formed with at least one cavity, for reducing weights thereof and loading of the motor and the driver.

The present disclosure provides a thin-film-deposition equipment, which includes a main body, a carrier and a shielding device, wherein a portion of the shielding device and the carrier are disposed within the main body. The main body includes a reaction chamber, and two sensor areas connected to the reaction chamber, wherein the sensor areas are smaller than the reaction chamber. The shielding device includes a first-shield member, a second-shield member and a driver. The driver interconnects the first-shield member and the second-shield member, for driving the first-shield member and the second-shield member to move in opposite directions. During a deposition process, the two shield members are separate from each other into an open state, and respectively enter the two sensor areas. During a cleaning process, the driver swings the shield members toward each other into a shielding state for covering the carrier.

A plasma processing apparatus including a processing chamber having one or more sidewalls and a dome is provided. The plasma processing apparatus includes a workpiece support disposed in the processing chamber configured to support a workpiece during processing, an induction coil assembly for producing a plasma in the processing chamber, a Faraday shield disposed between the induction coil assembly and the dome, the Faraday shield comprising an inner portion and an outer portion, and a thermal management system. The thermal management system including one or more heating elements configured to heat the dome, and one or more thermal pads disposed between an outer surface of the dome and the heating elements, wherein the one or more thermal pads are configured to facilitate heat transfer between the one or more heating elements and the dome. Thermal management systems and methods for processing workpieces are also provided.