Patent classifications
H01J37/3458
METHODS FOR SHAPING MAGNETIC FIELDS DURING SEMICONDUCTOR PROCESSING
Methods of processing a substrate in a PVD chamber are provided herein. In some embodiments, a method of processing a substrate in a PVD chamber, includes: sputtering material from a target disposed in the PVD chamber and onto a substrate, wherein at least some of the material sputtered from the target is guided to the substrate through a magnetic field provided by one or more upper magnets disposed about a processing volume of the PVD chamber above a support pedestal for the substrate in the PVD chamber, one or more first magnets disposed about the support pedestal and providing an increased magnetic field strength at an edge region of the substrate, and one or more second magnets disposed below the support pedestal that increase a magnetic field strength at a central region of the substrate.
APPARATUS AND METHOD FOR PHYSICAL VAPOR DEPOSITION
An apparatus and method for physical vapor deposition includes a magnetron having a plurality of electromagnets disposed between a base and a magnetic conductive plate. The magnetron includes a plurality of individually controlled electromagnets between a base and an electromagnetic plate. The magnetron controls the polarity and strength of current supplied to the respective electromagnets to generate magnetic fields that confine electrons to areas near a target material within the deposition chamber.
Systems and methods for an improved magnetron electromagnetic assembly
The present invention provides a magnetron system, comprising a baseplate assembly. The baseplate assembly defining a housing portion and a power feedthrough. A sputtering target is disposed within the housing portion of the baseplate assembly. An electromagnetic assembly is disposed within the housing portion of the baseplate assembly. The electromagnetic assembly comprising a plurality of electromagnet pairs and a plurality of magnet pairs, wherein the plurality of electromagnet pairs and the plurality of magnet pairs are arranged in an alternating order such that at least one electromagnet pair of the plurality of electromagnet pairs is juxtapositioned between two magnet pairs of the plurality of magnet pairs, and at least one magnet pair of the plurality of magnet pairs is juxtapositioned between two electromagnet pairs of the plurality of electromagnet pairs.
Permeance magnetic assembly
In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.
Modifiable magnet configuration for arc vaporization sources
The present invention relates to an arc vaporization source for generating hard surface coatings on tools. The invention comprises an arc-vaporization source, comprising at least one electric solenoid and a permanent magnet arrangement that is displaceable relative to the target surface. The vaporization source can be adjusted to the different requirements of oxide, nitride, or metal coatings. The rate drop during the lifespan of a target to be vaporized can be held constant or adjusted by suitably adjusting the distance of the permanent magnets to the front side of the target. A compromise between the coating roughness and rate can be set.
Plasma generation apparatus, deposition apparatus, and plasma generation method
Provided is a plasma generation apparatus capable of generating uniform plasma over a wide range. The plasma generation apparatus includes two oppositely arranged plasma guns each injecting a discharge gas to be ionized, and having a cathode for emitting electrons, and a converging coil for forming a magnetic flux to guide the emitted electrons, and polarities of the converging coils with respect to the cathodes in the two plasma guns are opposite to each other.
DEPOSITION SYSTEM AND METHOD
A deposition system provides a feature that may reduce costs of the sputtering process by increasing a target change interval. The deposition system provides an array of magnet members which generate a magnetic field and redirect the magnetic field based on target thickness measurement data. To adjust or redirect the magnetic field, at least one of the magnet members in the array tilts to focus on an area of the target where more target material remains than other areas. As a result, more ion, e.g., argon ion bombardment occurs on the area, creating more uniform erosion on the target surface.
Filtered cathodic arc method, apparatus and applications thereof
An apparatus for generating energetic particles and application of coatings in a vacuum comprising a plasma duct surrounded by a magnetic deflecting and focusing system communicating with a primary cathodic arc plasma source in a cathode chamber and a distal anode in a coating chamber. A coating chamber comprises a substrate holder off of an optical axis of the plasma source. A set of baffles are installed along the walls of cathode chambers and the plasma duct not occupied with plasma sources and in some embodiments across the plasma stream to trap macroparticles and neutrals. A plasma duct has a deflecting portion with attached cathode chamber and a tunnel portion attached to the coating chamber. The deflecting system comprises a deflecting coil surrounding the cathode chamber having an off-set deflecting conductor spaced from the plasma duct. In one embodiment a magnetron source is magnetically coupled with cathodic arc source.
Electromagnetic module for physical vapor deposition
Sputtering systems and methods are provided. In an embodiment, a sputtering system includes a chamber configured to receive a substrate, a sputtering target positioned within the chamber, and an electromagnet array over the sputtering target. The electromagnet array includes a plurality of electromagnets.
Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
A method of depositing a layer on a substrate includes applying a first magnetic field to a cathode target, electrically coupling the cathode target to a first high power pulse resonance alternating current (AC) power supply, positioning an additional cylindrical cathode target electrode around the cathode, applying a second magnetic field to the additional cylindrical cathode target electrode, electrically coupling the additional cylindrical cathode target electrode to a second high power pulse resonance AC power supply, generating magnetic coupling between the cathode target and an anode, providing a feed gas, and selecting a time shift between negative voltage peaks associated with AC voltage waveforms generated by the first high power pulse resonance AC power supply and the second high power pulse resonance AC power supply. An apparatus includes a vacuum chamber, cathode target magnet assembly, first high power pulse resonance AC power supply, additional electrode, additional electrode magnet assembly, second high power pulse resonance AC power supply, and feed gas.