A semiconductor manufacturing apparatus for forming a film on a substrate by sputtering a target based on a recipe for performing film formation is provided. The apparatus comprises: a storage device configured to store an adjustment coefficient for adjusting a film quality of the formed film based on the recipe; a monitoring device configured to monitor a used amount of the target; a compensation device configured to calculate a compensation value for compensating at least one of process conditions set in the recipe by inputting the used amount of the target monitored by the monitoring device and the adjustment coefficient into a calculation formula; and a recipe execution device configured to execute film formation based on the recipe and the compensation value.

Embodiments are directed to a method of optimizing thickness of a target material film deposited on a semiconductor substrate in a semiconductor processing chamber, wherein the semiconductor processing chamber includes a magnetic assembly positioned on the semiconductor processing chamber, the magnetic assembly including a plurality of magnetic columns within the magnetic assembly. The method includes operating the semiconductor processing chamber to deposit a film of target material on a semiconductor substrate positioned within the semiconductor processing chamber, measuring an uniformity of the deposited film, adjusting a position of one or more magnetic columns in the magnetic assembly, and operating the semiconductor processing chamber to deposit the film of the target material after adjusting position of the one or more magnetic columns.

A system for semiconductor manufacturing that uses ultrasonic waves for estimating and monitoring a remaining service lifetime of a consumable element is provided. A consumable element comprises a front side arranged inside a process chamber and a back side, opposite the front side, arranged outside the process chamber. An ultrasonic transducer is arranged on the back side of the consumable element, and directed towards the front side of the consumable element. A monitoring unit is configured to estimate and monitor a remaining service lifetime of the consumable element using the ultrasonic transducer. A method for estimating and monitoring the remaining service lifetime of the consumable element using ultrasonic waves is also provided.

A film forming apparatus for forming a film on a substrate by using a magnetron sputtering method. The film forming apparatus includes: a substrate holder configured to hold a substrate; a target holder configured to hold a target made of a ferromagnetic material to face the substrate holder; a magnet provided on a surface of the target holder opposite to the substrate holder, and configured to leak a magnetic field to a front surface of the target held by the target holder that is a surface close to the substrate holder; and a magnetic field strength measurement device configured to measure a strength of the magnetic field.

The present disclosure provides an apparatus for fabricating a semiconductor device with target sputtering, including a chamber for accommodating a consumable target, a target accumulative consumption counter, wherein the target accumulative consumption counter provides a signal correlated to an amount of the consumable target being consumed, and a power supply communicates with the consumable target counter, wherein the power supply provides a power output according to the signal.

A process chamber includes a chamber body having a chamber lid assembly disposed thereon, one or more monitoring devices coupled to the chamber lid assembly, and one or more antennas disposed adjacent to the chamber lid assembly that are in communication with the one or more monitoring devices.

A cathode assembly for a physical vapor deposition (PVD) system includes a target holder and a thickness detector. The target holder is for holding a target, in which the target has a first major surface and a second major surface. The first major surface and the second major surface are respectively proximal and distal to the target holder. The thickness detector is disposed on the target holder. At least one portion of the first major surface is exposed to the thickness detector for allowing the thickness detector to detect the thickness of the target through the first major surface.

A magnetron sputtering device, a magnetron sputtering apparatus, and a magnetron sputtering method are provided. The magnetron sputtering device includes: a target material bearing portion, configured to bear a target material thereon; a magnet bearing section, configured to bear a magnet thereon and to be capable of driving the magnet to perform reciprocating motion along a predetermined path with respect to the target material bearing portion; a limit sensor, configured to determine an end-point position of the predetermined path along which the magnet performs reciprocating motion; the end-point position determined by the limit sensor can be adjusted along the predetermined path during a working procedure of the magnetron sputtering device.

The present disclosure provides an apparatus for fabricating a semiconductor device with target sputtering, including a chamber for accommodating a consumable target, a target accumulative consumption counter, wherein the target accumulative consumption counter provides a signal correlated to an amount of the consumable target being consumed, and a power supply communicates with the consumable target counter, wherein the power supply provides a power output according to the signal.

A film forming apparatus for forming a film on a substrate by using a magnetron sputtering method. The film forming apparatus includes: a substrate holder configured to hold a substrate; a target holder configured to hold a target made of a ferromagnetic material to face the substrate holder; a magnet provided on a surface of the target holder opposite to the substrate holder, and configured to leak a magnetic field to a front surface of the target held by the target holder that is a surface close to the substrate holder; and a magnetic field strength measurement device configured to measure a strength of the magnetic field.