Methods for depositing a dielectric oxide layer atop one or more substrates disposed in or processed through a PVD chamber are provided herein. In some embodiments, such a method includes: sputtering source material from a target assembly onto a first substrate while the source material is at a first erosion state and while providing a first amount of RF power to the target assembly to deposit a dielectric oxide layer onto a first substrate having a desired resistance-area; and subsequently sputtering source material from the target assembly onto a second substrate while the source material is at a second erosion state and while providing a second amount of RF power to the target assembly, wherein the second amount of RF power is lower than the first amount of RF power by a predetermined amount calculated to maintain the desired resistance-area.

In one embodiment, a magnetron assembly comprises a plurality of magnets and a yoke configured to hold the plurality of magnets in at least four independent linear arrays. The plurality of magnets is arranged in the yoke so as to form a pattern comprising an outer portion and an inner portion. The outer portion substantially surrounds the perimeter of the inner portion. The magnets used to form the outer portion have a first polarity and the magnets used to form the inner portion having a second polarity. The outer portion of the pattern comprises a pair of elongated sections that are substantially parallel to one another. The outer portion of the pattern comprises a pair of turnaround sections, wherein each turnaround section substantially spans respective ends of the pair of elongated sections and wherein each turnaround section comprises a plurality of magnets having the first polarity. Other embodiments are described.

A film forming apparatus includes a processing container, a substrate holder configured to hold a substrate inside the processing container, a cathode unit disposed above the substrate holder, and a gas introducing mechanism configured to introduce a plasma generating gas into the processing container. The cathode unit includes a target, a power supply configured to supply electric power to the target, a magnet provided on a rear side of the target, and a magnet driving part configured to drive the magnet. The magnet driving part includes an oscillation driver configured to oscillate the magnet along the target, and a perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver. Sputtered particles are deposited on the substrate by magnetron sputtering.

A system and a method for detecting abnormality of a thin-film deposition process are provided. In the method, a thin-film is deposited on a substrate in a thin-film deposition chamber by using a target, a dimension of a collimator mounted between the target and the substrate is scanned by using at least one sensor disposed in the thin-film deposition chamber to derive an erosion profile of the target, and abnormality of the thin-film deposition process is detected by analyzing the erosion profile with an analysis model trained with data of a plurality of erosion profiles derived under a plurality of deposition conditions.

An object is to extend the life of the target member. The target (TA2) is designed to have a symmetrical structure so as to realize an invertible configuration. According to this, even if the consumption of the target member (71) is large on the side closer to the plasma generation unit where the plasma density is high, the portion of the target member (71) which has been located on the side closer to the film formation object where the plasma density is low and is thus consumed less can be rearranged on the side closer to the plasma generation unit where the plasma density is high, by inverting the target (TA2).

The present disclosure provides an apparatus for fabricating a semiconductor device with target sputtering, including a chamber for accommodating a consumable target, a target accumulative consumption counter, wherein the target accumulative consumption counter provides a signal correlated to an amount of the consumable target being consumed, and a power supply communicates with the consumable target counter, wherein the power supply provides a power output according to the signal.

An apparatus includes a target, wherein the target includes a nonuniform erosion profile. The apparatus also includes a number of interchangeable magnetic and non-magnetic inserts. The interchangeable magnetic and non-magnetic inserts are configured to control a pass through flux based on the nonuniform erosion profile.

An apparatus includes a target, wherein the target includes a nonuniform erosion profile. The apparatus also includes a number of interchangeable magnetic and non-magnetic inserts. The interchangeable magnetic and non-magnetic inserts are configured to control a pass through flux based on the nonuniform erosion profile.

An apparatus includes a target, wherein the target includes a nonuniform erosion profile. The apparatus also includes a number of interchangeable magnetic and non-magnetic inserts. The interchangeable magnetic and non-magnetic inserts are configured to control a pass through flux based on the nonuniform erosion profile.

The present disclosure provides an apparatus for fabricating a semiconductor device with target sputtering, including a chamber for accommodating a consumable target, a target accumulative consumption counter, wherein the target accumulative consumption counter provides a signal correlated to an amount of the consumable target being consumed, and a power supply communicates with the consumable target counter, wherein the power supply provides a power output according to the signal.