A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.

A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.

A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.

A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.

The present design includes a gas discharge lamp having a base, a closed top cylindrical envelope fixedly mounted to the base, the closed top cylindrical envelope comprising an integrally formed partition defining a pair of openings on opposite sides of the partition, and two electrodes positioned proximate the base, each electrode on an opposite side of the partition. Sides of the partition contact the closed top cylindrical envelope and the partition includes a notch formed proximate an upper edge of the partition thereby establishing an exclusive gas passageway between the pair of openings.

A light source, with electrodes of alternating polarity attached to a substrate in an excimer ultraviolet (UV) lamp, for generating a plasma discharge between each of the electrodes. The shape of the substrate can shape and control the plasma discharge to reduce exposure of materials susceptible to attack by the halogens. The electrodes can be located such that the plasma discharge occurs in a region where it produces less contact of the halogens with the vulnerable areas of the lamp enclosure. The materials, such as the electrodes, substrate, and envelope, can be selected to withstand corrosive materials. In another embodiment, a plurality of sealed tubes, at least some of which contain an excimer gas are positioned between two electrodes.

The present invention relates to a lamp having synthetic ceramic glass electrodes, which comprises a glass tube, a plurality of synthetic ceramic glass electrodes, and a plurality of connecting members. The plurality of connecting members are disposed between the glass tube and the plurality of synthetic ceramic glass electrodes. The plurality of connecting members have different thermal expansion coefficients. Thereby, by using the plurality of connecting members to connect the plurality of synthetic ceramic glass electrodes, the glass tube and the plurality of synthetic ceramic glass electrodes can be sealed tightly.

The present invention relates to a lamp having synthetic ceramic glass electrodes, which comprises a glass tube, a plurality of synthetic ceramic glass electrodes, and a plurality of connecting members. The plurality of connecting members are disposed between the glass tube and the plurality of synthetic ceramic glass electrodes. The plurality of connecting members have different thermal expansion coefficients. Thereby, by using the plurality of connecting members to connect the plurality of synthetic ceramic glass electrodes, the glass tube and the plurality of synthetic ceramic glass electrodes can be sealed tightly.