A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.

A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.

A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.

A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.

System and/or method generally relate to extending a lifespan of an excimer lamp. The system includes a ultra-violet (UV) light having a pair of dielectrics configured to separate electrodes. One of the electrodes includes a metal mesh. The system includes a power supply electrically coupled to the UV light and configured to deliver electrical power to the UV light. The system includes a temperature sensor operably coupled to the UV light. The temperature sensor is configured to generate a temperature signal indicative of a temperature of the UV light. The system includes at least one processor. The at least one processor is configured to determine a temperature of the UV light based on the temperature signal, and adjust the electrical power delivered to the UV light based on the temperature signal.

System and/or method generally relate to extending a lifespan of an excimer lamp. The system includes a ultra-violet (UV) light having a pair of dielectrics configured to separate electrodes. One of the electrodes includes a metal mesh. The system includes a power supply electrically coupled to the UV light and configured to deliver electrical power to the UV light. The system includes a temperature sensor operably coupled to the UV light. The temperature sensor is configured to generate a temperature signal indicative of a temperature of the UV light. The system includes at least one processor. The at least one processor is configured to determine a temperature of the UV light based on the temperature signal, and adjust the electrical power delivered to the UV light based on the temperature signal.

System and/or method generally relate to extending a lifespan of an excimer lamp. The system includes a ultra-violet (UV) light having a pair of dielectrics configured to separate electrodes. One of the electrodes includes a metal mesh. The system includes a power supply electrically coupled to the UV light and configured to deliver electrical power to the UV light. The system includes a temperature sensor operably coupled to the UV light. The temperature sensor is configured to generate a temperature signal indicative of a temperature of the UV light. The system includes at least one processor. The at least one processor is configured to determine a temperature of the UV light based on the temperature signal, and adjust the electrical power delivered to the UV light based on the temperature signal.