A substrate cleaning apparatus configured to clean a surface of a substrate having a circular shape by bringing a cleaning member into contact with the surface of the substrate and rotating the substrate and the cleaning member relatively is provided. A contact region of the cleaning member which comes into contact with the surface of the substrate is widened in a radial shape from a center side of the substrate toward a peripheral side thereof.

A cleaning apparatus for cleaning a substrate includes a lamp for emitting ultraviolet radiation in an irradiation region; a housing that houses the lamp; a water deflector spaced below the housing, the water deflector having a water inlet for receiving a supply of ozonated water and a water outlet for discharging ozonated water irradiated by the lamp into a substrate processing region beneath the water deflector, and defining a water flow path between the water inlet and the water outlet, the water flow path extending in the irradiation region; an upper reflector extending along and above the lamp; and a lower reflector extending along and below the water deflector, wherein the upper reflector and the lower reflector at least partially define the irradiation region and reflect ultraviolet radiation toward the water flow path, and wherein the lower reflector shields the substrate from ultraviolet radiation emitted by the lamp.

Embodiments of a methods and cleaning systems for cleaning components for use in substrate processing equipment are provided herein. In some embodiments, a cleaning system includes a boiler having a heater configured to heat a fluid; a clean chamber fluidly coupled to the boiler via at least one of a gas line and a liquid line, wherein the clean chamber includes one or more fixtures in an interior volume therein for holding at least one component to be cleaned, and wherein the clean chamber includes a heater for heating the interior volume; and an expansion chamber fluidly coupled to the clean chamber via a release line for evacuating the clean chamber, wherein the release line includes a release valve to selectively open or close a flow path between the expansion chamber and the clean chamber, and wherein the expansion chamber includes a chiller and a vacuum port.

The natural oxidation film of polysilicon, which is exposed at a side surface of a recess portion 83 provided in a substrate W, is removed and a thin film 84 of polysilicon is exposed at the side surface of the recess portion 83. Liquid IPA is brought into contact with the thin film 84 of polysilicon after the natural oxidation film of polysilicon is removed. Diluted ammonia water is supplied to the substrate W and the thin film 84 of polysilicon is etched after IPA comes into contact with the thin film 84 of polysilicon.

The disclosure provides a pattern collapse free wet clean process for fabricating semiconductor devices. By performing post reactive ion etching (RIE) using a fluorine-containing gas such as C.sub.2F.sub.6, followed by cleaning in a single wafer cleaner (SWC) with diluted hydrofluoric acid (HF) or in a solution of ammonia and HF, a substrate with multiple pattern collapse free high aspect ratio shallow trench isolation (STI) features can be obtained.

A substrate processing apparatus includes a substrate processing part that supplies a processing liquid from a processing liquid supply part to a mounted substrate to execute liquid processing, a liquid drainage part that has a recovery channel connected to a storage part that stores the processing liquid and drains the processing liquid used for the liquid processing, and a control unit executes a processing recipe for the liquid processing and a cleaning recipe for cleaning the substrate processing part and the liquid drainage part. The control unit executes a cleaning operation for supplying a cleaning liquid from a cleaning liquid supply part to clean the substrate processing part and the liquid drainage part and subsequently executes a return operation for supplying the processing liquid from the processing liquid supply part to replace the cleaning liquid attached to the substrate processing part and the liquid drainage part with the processing liquid.

A substrate processing method of drying a substrate by using a processing fluid in a supercritical state is performed by a substrate processing apparatus. The substrate processing apparatus includes a fluid discharge unit, a supply line, a fluid drain unit, a drain line and a flow control device. The substrate processing method includes: flowing the processing fluid from the fluid discharge unit to the fluid drain unit such that the processing fluid flows along a surface of the substrate. The flowing of the processing fluid includes flowing the processing fluid in a first flow mode and flowing the processing fluid in a second flow mode. Between the first flow mode and the second flow mode, a flow direction distribution of the processing fluid is different, and a switchover between the first flow mode and the second flow mode is performed by the flow control device.

A handle wafer used for a bonded wafer that is produced by bonding an active wafer and the handle wafer through an insulation film is provided. The handle wafer includes a handle wafer body and a polycrystalline silicon layer deposited on a side close to a bonding surface of the handle wafer body. The polycrystalline silicon layer has a polycrystalline silicon grain size of 0.419 μm or less.

A method for washing an aluminum nitride single crystal substrate, the aluminum nitride single crystal substrate including: an aluminum-polar face; and a nitrogen-polar face opposite to the aluminum-polar face, the method including: (a) scrubbing a surface of the nitrogen-polar face.

Disclosed is a method for processing a substrate, comprising a liquid processing step of performing liquid processing on the substrate by supplying a processing liquid onto the substrate in a liquid processing chamber, a transfer step of transferring the substrate from the liquid processing chamber to a drying chamber, and a drying step of drying the substrate in the drying chamber. In the drying step, the substrate is dried while an edge region of the substrate other than a central region of the substrate is supported by a support unit, and in the liquid processing step, the liquid processing is performed on the substrate such that a height of the processing liquid remaining on the edge region of the substrate is greater than a height of the processing liquid remaining on the central region of the substrate when the liquid processing is completed in the liquid processing chamber.