To provide a photosensitive composition capable of easily forming a cured film having a low refractive index. The present invention provides a photosensitive siloxane composition comprising: a polysiloxane, a photosensitive agent, hollow silica particles, and a solvent. The hollow silica particles contain voids inside, and have outer surfaces subjected to hydrophobic treatment.

There is provided a technique that includes: supplying a film formation inhibition gas to the substrate, which includes a first base and a second base on a surface of the substrate, to form a film formation inhibition layer on a surface of the first base; supplying a film-forming gas to the substrate after forming the film formation inhibition layer on the surface of the first base, to form a film on a surface of the second base; and supplying a halogen-free substance, which chemically reacts with the film formation inhibition layer and the film, to the substrate after forming the film on the surface of the second base, in a non-plasma atmosphere.

A method of manufacturing a semiconductor device includes detecting, using a sensor, liquid spin on glass (SOG) outside of a dispenser nozzle in an abnormal length relative to the dispenser nozzle. The method further includes adjusting, using a controller, a suck back (SB) valve to withdraw liquid SOG from the abnormal length. The method further includes comparing a sensed amount of liquid SOG deposited onto the semiconductor wafer from the dispenser nozzle with at least one set operating parameter. The method further includes pausing sensing of a duration of dispensing liquid SOG onto the semiconductor wafer based on the sensed amount of liquid SOG deposited being outside the at least one operating parameter.

Passivation layers to inhibit vapor deposition can be used on reactor surfaces to minimize deposits while depositing on a substrate housed therein, or on particular substrate surfaces, such as metallic surfaces on semiconductor substrates to facilitate selective deposition on adjacent dielectric surfaces. Passivation agents that are smaller than typical self-assembled monolayer precursors can have hydrophobic or non-reactive ends and facilitate more dense passivation layers more quickly than self-assembled monolayers, particularly over complex three-dimensional structures.

Semiconductor devices and manufacturing method of the same are disclosed. A semiconductor device includes a substrate, a p-type MOS transistor, an n-type MOS transistor and a cured flowable oxide layer. The substrate includes a first region and a second region. The p-type MOS transistor is in the first region. The n-type MOS transistor is in the second region. The cured flowable oxide layer covers the p-type MOS transistor and the n-type MOS transistor, wherein a first strain of the cured flowable oxide layer applying to the p-type MOS transistor is different from a second strain of the cured flowable oxide layer applying to the n-type MOS transistor, and the difference therebetween is greater than 0.002 Gpa.

Passivation layers to inhibit vapor deposition can be used on reactor surfaces to minimize deposits while depositing on a substrate housed therein, or on particular substrate surfaces, such as metallic surfaces on semiconductor substrates to facilitate selective deposition on adjacent dielectric surfaces. Passivation agents that are smaller than typical self-assembled monolayer precursors can have hydrophobic or non-reactive ends and facilitate more dense passivation layers more quickly than self-assembled monolayers, particularly over complex three-dimensional structures.

Passivation layers to inhibit vapor deposition can be used on reactor surfaces to minimize deposits while depositing on a substrate housed therein, or on particular substrate surfaces, such as metallic surfaces on semiconductor substrates to facilitate selective deposition on adjacent dielectric surfaces. Passivation agents that are smaller than typical self-assembled monolayer precursors can have hydrophobic or non-reactive ends and facilitate more dense passivation layers more quickly than self-assembled monolayers, particularly over complex three-dimensional structures.

The present invention relates to the field of chemical industry, and discloses organosilicone micro-mesoporous ultra-low dielectric thin films and preparation methods therefor. A structural formula of a POSS-based organosilane precursor in the thin film is as follows: ##STR00001## where n is 12, 16, 18, 20, or 22, and X is CH.sub.3 or CH.sub.2CH.sub.3. The preparation method includes the following steps: dissolving a certain amount of the POSS-based precursor in an organic solvent at a room temperature; adding an appropriate amount of a photoacid generator, after uniformly stirring, spraying a mixed liquid to form a film on a substrate; placing the substrate under a light-emitting diode lamp for irradiating for a preset time after the organic solvent is completely evaporated; then placing the substrate in N,N-dimethylformamide for undergoing a transesterification reaction with fluoroalkyl alcohol for 24-72 h; and washing and drying to obtain the organosilicone micro-mesoporous ultra-low dielectric thin film. Compared with existing ultra-low dielectric thin films, the obtained thin film has a lower dielectric constant (1.89), and is better in dielectric stability in a humid environment, simple to operate, and high in polymerization speed.

A spin-on glass (SOG) depositing system includes a suck back (SB) valve arranged to receive SOG. The SOG depositing system further includes a SOG dispenser having a nozzle, the SOG dispenser coupled with the SB valve for receiving SOG. The SOG depositing system further includes a detector positioned to detect SOG outside the nozzle. The SOG depositing system further includes an SB valve controller coupled with the detector for receiving one or more signals from the detector and coupled with the SB valve for controlling operation of the SB valve, wherein the SB valve controller is configured to pause sensing by the detector based on the sensed amount of SOG outside the nozzle being outside at least one operating parameter.

Systems, apparatuses, and methods related to semiconductor structure formation are described. An example apparatus includes a structural material for a semiconductor device. The structural material includes an orthosilicate derived oligomer having a number of oxygen (O) atoms each chemically bonded to one of a corresponding number of silicon (Si) atoms and a chemical bond formed between an element from group 13 of a periodic table of elements (e.g., B, Al, Ga, In, and Tl) and the number of O atoms of the orthosilicate derived oligomer. The chemical bond crosslinks chains of the orthosilicate derived oligomer to increase mechanical strength of the structural material, relative to the structural material formed without the chemical bond to crosslink the chains, among other benefits described herein.