An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y.sub.2O.sub.3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.

A nitrogen plasma treatment is used on an adhesion layer of a contact plug. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the adhesion layer. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the adhesion layer. A nitrogen plasma treatment is used on an opening in an insulating layer. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the insulating layer at the opening. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the insulating layer.

Exemplary methods of semiconductor processing may include etching one or more features partially through a dielectric material to expose material from one or more layer pairs formed on a substrate. The methods may include halting the etching prior to penetrating fully through the dielectric material, and prior to exposing material from all layer pairs formed on the substrate. The methods may include forming a layer of carbon-containing material on the exposed material from each of the one or more layer pairs having exposed material. The methods may include etching the one or more features fully through the dielectric material to expose material for each remaining layer pair formed on the substrate.

An electronic apparatus is provided and includes a first substrate comprising a first conductive layer; a second substrate which is opposed to the first conductive layer and is separated from the first conductive layer, the second substrate including a second conductive layer, and a first hole penetrating the second substrate; and a connecting material which electrically connects the first conductive layer and the second conductive layer via the first hole, wherein the connecting material consists of a single material; and the second conductive layer is located on the second substrate on a side opposite to a side that is opposed to the first conductive layer.

A coating liquid for forming a metal oxide film, the coating liquid including: a metal source, which is at least one selected from the group consisting of inorganic salts, oxides, hydroxides, metal complexes, and organic acid salts; at least one alkali selected from the group consisting of organic alkalis and inorganic alkalis; and a solvent.

Methods and systems for selectively depositing dielectric films on a first surface of a substrate relative to a passivation layer previously deposited on a second surface are provided. The methods can include at least one cyclical deposition process used to deposit material on the first surface while the passivation layer is removed, thereby preventing deposition over the passivation layer.

A semiconductor structure includes first and second source/drain (S/D) features, one or more semiconductor channel layers connecting the first and second S/D features, a gate structure engaging the one or more semiconductor channel layers, a metal wiring layer at a backside of the semiconductor structure, an S/D contact electrically connecting the first S/D feature to the metal wiring layer, and a seal layer between the metal wiring layer and the gate structure. The seal layer is spaced away from the gate structure by an air gap therebetween.

A semiconductor feature includes: a semiconductor substrate; a dielectric structure and a semiconductor device disposed on the semiconductor substrate; an interconnecting structure disposed in the dielectric structure and connected to the semiconductor device; an STI structure disposed in the semiconductor substrate and surrounding the semiconductor device; two DTI structures penetrating the semiconductor substrate and the STI structure and surrounding the semiconductor device; a passivation structure connected to the semiconductor substrate and the DTI structures and located opposite to the interconnecting structure; and a conductive structure surrounded by the passivation structure, penetrating the semiconductor substrate and the STI structure into the dielectric structure, located between the DTI structures and electrically connected to the semiconductor device via the interconnecting structure.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

Methods for inducing reversible or permanent conductivity in wide band gap metal oxides such as Ga.sub.2O.sub.3, using light without doping, as well as related compositions and devices, are described.