A method for forming a semiconductor structure comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiO.sub.x as the insulator material comprises: providing a crystalline silicon substrate having a substantially clean deposition surface in a vacuum chamber; heating the silicon substrate to an oxidation temperature To in the range of 550 to 1200 ° C.; supplying, while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure P.sub.o in the range of 1.Math.10.sup.−8 to 1.Math.10.sup.−4 mbar in the vacuum chamber, molecular oxygen O.sub.2 into the vacuum chamber with an oxygen dose D.sub.o in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer and a crystalline silicon top layer. Related semiconductor structures are described.

A method of manufacturing a semiconductor device, including: providing a substrate including a first cell and a second cell, the first cell and the second cell are arranged in a first direction; forming a plurality of first metal strips arranged in a second direction and extending in the first direction on a first plane; forming a first trench over a boundary between the first cell and the second cell, a bottom surface of the first trench is located on a second plane over the first plane; filling the first trench with a non-conductive material, resulting in a separating wall extending in the first direction; and fort plurality of second metal strips extending in the second direction on a third plane over the second plane and including a first second metal strip and a second second metal strip separated by the separating wall.

Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

An integrated circuit (IC) substrate manufacturing process provides time-dependent device characteristic variation due to hydrogen absorption by including one or more gettering layers near the devices that would otherwise absorb hydrogen and exhibit the variation as the hydrogen migrates in the devices. The method includes forming or mounting the devices on a top surface of the semiconductor wafer in die areas of the substrate, forming semiconductor structures in the semiconductor die areas, forming a getter layer above or adjacent to the devices in the die areas, and processing the wafer with one or more processes exposing the wafer to vapor having a hydrogen content, whereby an amount of hydrogen absorbed by the devices is reduced by presence of the getter layer. The method produces wafers including semiconductor dies with reduced hydrogen absorption by the devices and packaged ICs including the dies.

A substrate processing apparatus includes: a chamber; and a processing gas supply unit connected to the chamber via a processing gas supply flow path and configured to supply a processing gas. The processing gas supply unit includes a raw material cartridge that includes a raw material tank that accommodates a porous member containing a metal-organic framework adsorbed with gas molecules of a raw material of the processing gas; a main body configured to communicate the raw material tank and the processing gas supply flow path with each other when the raw material cartridge is attached; and a desorption mechanism configured to desorb the gas molecules of the raw material of the processing gas and allow the gas molecules to flow out as the processing gas to the processing gas supply flow path while the raw material cartridge is attached to the main body.

There is provided a technique that includes: forming an oxide film containing a central atom X of a precursor on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer containing a component in which a first group is bonded to the central atom X on the substrate by supplying the precursor having a molecular structure in which the first group and a second group are bonded to the central atom X and having a bonding energy between the first group and the central atom X that is higher than a bonding energy between the second group and the central atom X, to the substrate; and (b) forming a second layer containing the central atom X by supplying an oxidizing agent to the substrate to oxidize the first layer, wherein in (a), the precursor is supplied under a condition in which the second group is desorbed and the first group is not desorbed from the central atom X contained in the precursor and the central atom X is adsorbed on a surface of the substrate in a state where the second group is desorbed from the central atom X and the bonding of the first group and the central atom X is maintained.

A method for manufacturing a semiconductor device according to an, exemplary embodiment of the present disclosure includes: forming a semiconductor layer on a substrate in a chamber; and forming a semiconductor layer on a substrate in a chamber. Forming the insulation layer includes: (a) injecting precursors that include a metal into a surface of the semiconductor layer; (b) removing precursors that are not adsorbed; (c) injecting reactants onto the surface of the semiconductor layer; and (d) removing residual reactants. The semiconductor layer includes a semiconductor material that has a layered structure.

Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.

The present invention further provides a method for forming a semiconductor device, the method including: first, a target layer is provided, an etching stop layer is formed on the target layer, a top oxide layer is formed on the etching stop layer, afterwards, a first photoresist layer is formed on the top oxide layer, and a first etching process is then performed, to form a plurality of first trenches in the top oxide layer. Next, a second photoresist layer is formed on the top oxide layer, portion of the second photoresist layer fills in each first trench, a second etching process is then performed to form a plurality of second trenches in the top oxide layer, and using the remaining etching stop layer as a hard mask, a third etching process is performed to remove parts of the etching stop layer and parts of the target layer.

Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.