In one embodiment, a semiconductor device includes a stacked film alternately including a plurality of electrode layers and a plurality of insulating layers. The device further includes a first insulator, a charge storage layer, a second insulator and a first semiconductor layer that are disposed in order in the stacked film. The device further includes a plurality of first films disposed between the first insulator and the plurality of insulating layers. Furthermore, at least one of the first films includes a second semiconductor layer.

There is provided a nitride semiconductor laminate, including: a substrate; an electron transit layer provided on the substrate and containing a group III nitride semiconductor; and an electron supply layer provided on the electron transit layer and containing a group III nitride semiconductor, wherein a surface force A of the electron supply layer acting as an attractive force for attracting a probe and a surface of the electron supply layer when measured using the probe consisting of a glass sphere with a diameter of 1 mm covered with Cr, is stronger than a surface force B of Pt when measured under the same condition, and an absolute value |A−B| of a difference between them is 30 μN or more.

A method of forming an interconnect structure for semiconductor devices is described. The method comprises etching a patterned interconnect stack for form first conductive lines and expose a top surface of a first etch stop layer; etching the first etch stop layer to form second conductive lines and expose a top surface of a barrier layer; and forming a self-aligned via.

A method of producing a semiconductor laminate film includes forming a semiconductor layer containing silicon and germanium on a silicon substrate by a sputtering method. In the sputtering method, a film formation temperature of the semiconductor layer is less than 500° C., and a film formation pressure of the semiconductor layer ranges from 1 mTorr to 11 mTorr, or, a film formation temperature of the semiconductor layer is less than 600° C., and a film formation pressure of the semiconductor layer is equal to or more than 2 mTorr and less than 5 mTorr. The sputtering method uses a sputtering gas having a volume ratio of a hydrogen gas of less than 0.1%, and the semiconductor layer satisfies a relationship of t≤0.881×x.sup.−4.79, where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer.

A method of forming an interconnect structure for semiconductor devices is described. The method comprises etching a patterned interconnect stack for form first conductive lines and expose a top surface of a first etch stop layer; etching the first etch stop layer to form second conductive lines and expose a top surface of a barrier layer; and forming a self-aligned via.

A system and/or method for coating a substrate. The system may include a chuck for holding and rotating the substrate, a dispensing subsystem for dispensing a coating material onto the substrate, and a shield member. The shield member may be movable towards and away from the substrate during the coating procedure. The shield member may have an inverted funnel shape. The shield member may include a central chamber through which a solvent vapor flows and a peripheral chamber that is fluidly separated from the central chamber through which a gas flows. During a coating procedure, the shield member may be moved very close to the substrate and the solvent vapor and gas may flow onto the substrate to create a solvent rich ambient around the substrate and prevent aerosols of the coating material from redepositing onto the substrate after being flung off due to spinning of the substrate.

A transistor structure can include a semiconductor-on-insulator substrate that includes an upper substrate region separated from a lower substrate region by a buried insulator. Shallow halo implant regions can be formed in an upper substrate region having a peak concentration at a first depth within the upper substrate region. Deep halo implant regions can be formed in the upper substrate region having a peak concentration at a second depth lower than the first depth. An epitaxial layer can be formed on top of the upper substrate region and below the control gate. Source and drain regions both of a second conductivity type formed in at least the epitaxial layer. In some embodiments, a lower substrate region can be biased for a double-gate effect.

Systems and methods for processing workpieces, such as semiconductor workpieces are provided. One example embodiment is directed to a processing system for processing a plurality of workpieces. The processing system can include a loadlock chamber, a transfer chamber, and at least two processing chamber having two or more processing stations. The processing system further includes a storage chamber for storing replaceable parts. The transfer chamber includes a workpiece handling robot. The workpiece handling robot can be configured to transfer a plurality of replaceable parts from the processing stations to the storage chamber.

The present disclosure provides a DNA-targeting RNA that comprises a targeting sequence and, together with a modifying polypeptide, provides for site-specific modification of a target DNA and/or a polypeptide associated with the target DNA. The present disclosure further provides site-specific modifying polypeptides. The present disclosure further provides methods of site-specific modification of a target DNA and/or a polypeptide associated with the target DNA The present disclosure provides methods of modulating transcription of a target nucleic acid in a target cell, generally involving contacting the target nucleic acid with an enzymatically inactive Cas9 polypeptide and a DNA-targeting RNA. Kits and compositions for carrying out the methods are also provided. The present disclosure provides genetically modified cells that produce Cas9; and Cas9 transgenic non-human multicellular organisms.

An epitaxial wafer that includes a silicon wafer and an epitaxial layer on the silicon wafer. The silicon wafer contains hydrogen that has a concentration profile including a first peak and a second peak. A hydrogen peak concentration of the first peak and a hydrogen peak concentration of the second peak are each not less than 1×10.sup.17 atoms/cm.sup.3.