The present invention relates to a method for manufacturing a diamond substrate, and more particularly, to a method of growing diamond after forming a structure of an air gap having a crystal correlation with a lower substrate by heat treatment of a photoresist pattern and an air gap forming film material on a substrate such as sapphire (Al.sub.2O.sub.3). Through such a method, a process is simplified and the cost is lowered when large-area/large-diameter single crystal diamond is heterogeneously grown, stress due to differences in a lattice constant and a coefficient of thermal expansion between the heterogeneous substrate and diamond is relieved, and an occurrence of defects or cracks is reduced even when a temperature drops, such that a high-quality single crystal diamond substrate may be manufactured and the diamond substrate may be easily self-separated from the heterogeneous substrate.

Embodiments of the disclosed technology include depositing a passivation layer onto a surface of a wafer that may include a graphene layer. The passivation layer may protect and isolate the graphene layer from electrical and chemical conditions that may damage the graphene layer. As such, the passivation layer may further protect the graphene sensor from being damaged and impaired for its intended use. Additionally, the passivation layer may be patterned to expose select areas of the graphene layer below the passivation layer, thus creating graphene wells and exposing the graphene layer to the appropriate chemicals and solutions.

Method for transferring a useful layer onto a supporting substrate, comprising the successive steps: a) providing a donor substrate made of crystalline diamond; b) implanting gaseous species, through the first surface of the donor substrate, according to a given implantation dose and implantation temperature suitable for forming a graphitic flat zone; c) assembling the donor substrate to the supporting substrate by direct adhesion; d) applying thermal annealing according to a thermal budget suitable for fracturing the donor substrate along the graphitic flat zone; the annealing temperature being greater than or equal to 800° C.; the implantation temperature is: above a minimum temperature beyond which bubbling of the implanted gaseous species occurs on the first surface when the donor substrate is submitted, in the absence of a stiffening effect, to thermal annealing according to said thermal budget, below a maximum temperature beyond which the given implantation dose no longer allows formation of the graphitic flat zone.

Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The system may include a diamond malarial having n-type donor atoms and a diamond lattice, wherein 0.16% of the donor atoms contribute conduction electrons with mobility greater than 770 cm2/Vs to the diamond lattice at 100 kPa and 300K. The method of fabricating diamond semiconductors may include the steps of selecting a diamond material having a diamond lattice; introducing a minimal amount of acceptor dopant atoms to the diamond lattice to create ion tracks; introducing substitutional dopant atoms to the diamond lattice through the ion tracks; and annealing the diamond lattice.

Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The system may include a diamond malarial having n-type donor atoms and a diamond lattice, wherein 0.16% of the donor atoms contribute conduction electrons with mobility greater than 770 cm2/Vs to the diamond lattice at 100 kPa and 300K. The method of fabricating diamond semiconductors may include the steps of selecting a diamond material having a diamond lattice; introducing a minimal amount of acceptor dopant atoms to the diamond lattice to create ion tracks; introducing substitutional dopant atoms to the diamond lattice through the ion tracks; and annealing the diamond lattice.

The present invention relates to a method for manufacturing a diamond substrate, and more particularly, to a method of growing diamond after forming a structure of an air gap having a crystal correlation with a lower substrate by heat treatment of a photoresist pattern and an air gap forming film material on a substrate such as sapphire (Al.sub.2O.sub.3). Through such a method, a process is simplified and the cost is lowered when large-area/large-diameter single crystal diamond is heterogeneously grown, stress due to differences in a lattice constant and a coefficient of thermal expansion between the heterogeneous substrate and diamond is relieved, and an occurrence of defects or cracks is reduced even when a temperature drops, such that a high-quality single crystal diamond substrate may be manufactured and the diamond substrate may be easily self-separated from the heterogeneous substrate.

According to some embodiments, a method for stabilizing electrical properties of a diamond semiconductor comprises terminating a surface of a diamond with hydrogen (H) or deuterium (D) atoms and over-coating the surface of the diamond with an encapsulating material comprising metal oxide salt doped with one or more elements capable of generating negative charge in the metal oxide salt.

Disclosed are a preparation method for a diamond-based field effect transistor and a field effect transistor, relating to the technical field of semi-conductors. Said method comprising: forming a conductive layer on the upper surface of a diamond layer; the diamond layer being a high-resistance layer; manufacturing an active region mesa on the diamond layer; manufacturing, on the conductive layer, a source electrode on a first region corresponding to a source electrode region, and manufacturing, on the conductive layer, a drain electrode on a second region corresponding to a drain electrode region; depositing, on the conductive layer, a photocatalyst dielectric layer on the upper surface of a third region corresponding to a source and gate region, and depositing, on the conductive layer, the photocatalyst dielectric layer on the upper surface of a fourth region corresponding to a gate and drain region; illuminating the photocatalyst dielectric layer; depositing, on the conductive layer, a gate dielectric layer on a fifth region corresponding to gate electrode region, manufacturing a gate electrode on the upper surface of the gate dielectric layer. The present invention can reduce the on-resistance of devices.

Disclosed are a preparation method for a diamond-based field effect transistor and a field effect transistor, relating to the technical field of semi-conductors. Said method comprising: forming a conductive layer on the upper surface of a diamond layer; the diamond layer being a high-resistance layer; manufacturing an active region mesa on the diamond layer; manufacturing, on the conductive layer, a source electrode on a first region corresponding to a source electrode region, and manufacturing, on the conductive layer, a drain electrode on a second region corresponding to a drain electrode region; depositing, on the conductive layer, a photocatalyst dielectric layer on the upper surface of a third region corresponding to a source and gate region, and depositing, on the conductive layer, the photocatalyst dielectric layer on the upper surface of a fourth region corresponding to a gate and drain region; illuminating the photocatalyst dielectric layer; depositing, on the conductive layer, a gate dielectric layer on a fifth region corresponding to gate electrode region, manufacturing a gate electrode on the upper surface of the gate dielectric layer. The present invention can reduce the on-resistance of devices.

According to some embodiments, a method for stabilizing electrical properties of a diamond semiconductor comprises terminating a surface of a diamond with hydrogen (H) or deuterium (D) atoms and over-coating the surface of the diamond with an encapsulating material comprising metal oxide salt doped with one or more elements capable of generating negative charge in the metal oxide salt.