A method of manufacturing a semiconductor device, the method including: preparing an insulated circuit substrate including a conductive plate; partially fixing a plate-like bonding member onto the conductive plate so as to make a positioning of the bonding member in a horizontal direction; mounting a semiconductor chip on the bonding member; and heating and melting the bonding member so as to form a bonding layer for bonding the insulated circuit substrate and the semiconductor chip each other.

To improve a TCT characteristic of a circuit substrate. The circuit substrate comprises a ceramic substrate including a first and second surfaces, and first and second metal plates respectively bonded to the first and second surfaces via first and second bonding layers. A three-point bending strength of the ceramic substrate is 500 MPa or more. At least one of L1/H1 of a first protruding portion of the first bonding layer and L2/H2 of a second protruding portion of the second bonding layer is 0.5 or more and 3.0 or less. At least one of an average value of first Vickers hardnesses of 10 places of the first protruding portion and an average value of second Vickers hardnesses of 10 places of the second protruding portion is 250 or less.

A method for producing a metal-ceramic substrate with electrically conductive vias includes: attaching a first metal layer in a planar manner to a first surface side of a ceramic layer; after attaching the first metal layer, introducing a copper hydroxide or copper acetate brine into holes in the ceramic layer delimiting a via, to form an assembly; converting the copper hydroxide or copper acetate brine into copper oxide; subjecting the assembly to a high-temperature step above 500° C. in which the copper oxide forms a copper body in the holes; and after converting the copper hydroxide or copper acetate brine into the copper oxide, attaching a second metal layer in a planar manner to a second surface side of the ceramic layer opposite the first surface side. The copper body produces an electrically conductive connection between the first and the second metal layers.

A copper/ceramic bonded body is provided, including: a copper member made of copper or a copper alloy; and a ceramic member, the copper member and the ceramic member being bonded to each other, in which a total concentration of Al, Si, Zn, and Mn is 3 atom % or less when concentration measurement is performed by an energy dispersive X-ray analysis method at a position 1000 nm away from a bonded interface between the copper member and the ceramic member to a copper member side, assuming that a total value of Cu, Mg, Ti, Zr, Nb, Hf, Al, Si, Zn, and Mn is 100 atom %.

An electronic component housing package includes: an insulating substrate including a main surface; an external connection conductor including a portion exposed at the main surface; and an inner layer conductor located inside of the external connection conductor in a thickness direction of the insulating substrate, in which the external connection conductor includes a protruding portion extending toward the inner layer conductor, and the protruding portion is in contact with the inner layer conductor.

There is provided an inexpensive metal/ceramic bonding substrate which has a metal circuit plate of aluminum or an aluminum alloy bonded directly to a ceramic substrate and which can prevent a large difference in level from being caused on portions corresponding to the grain boundaries of aluminum or the aluminum alloy even if heat cycles are repeatedly applied to the metal/ceramic bonding substrate, and a method for producing the same. In the preferred embodiment of a metal/ceramic bonding substrate, one side of a ceramic substrate 12 is bonded directly to a metal base plate 10 of aluminum or an aluminum alloy, and the other side of the ceramic substrate 12 is bonded directly to one side of a first metal plate 14 (for circuit pattern) of aluminum or the aluminum alloy, the other side of first metal plate 14 being bonded directly to one side of a graphite sheet 16, and the other side of the graphite sheet 16 being bonded directly to a second metal plate (for circuit pattern) 18 of aluminum or the aluminum alloy.

A chamber component comprises a body and a plasma sprayed ceramic coating on the body. The plasma sprayed ceramic coating is applied using a method that includes feeding powder comprising a yttrium oxide containing solid solution into a plasma spraying system, wherein the powder comprises a majority of donut-shaped particles, each of the donut-shaped particles having a spherical body with indentations on opposite sides of the spherical body. The method further includes plasma spray coating the body to apply a ceramic coating onto the body, wherein the ceramic coating comprises the yttrium oxide containing solid solution, wherein the donut-shaped particles cause the ceramic coating to have an improved morphology and a decreased porosity as compared to powder particles of other shapes, wherein the improved surface morphology comprises a reduced amount of surface nodules.

The object is to provide a semiconductor device that enables reduction of deformation of a metal pattern due to a thermal stress and enhancement of reliability with respect to a heat cycle. A semiconductor device includes an insulation substrate, a metal pattern, a refinement region, and a semiconductor chip. The metal pattern is provided on an upper surface of the insulation substrate. The refinement region is provided in at least a partial region of a surface of the metal pattern. The refinement region contains a crystal grain smaller than a crystal grain of metal contained in the metal pattern outside the at least partial region of the surface. The semiconductor chip is mounted in the refinement region of the metal pattern.

A device may include a first package and a second package where the first package has a warped shape. First connectors attached to a redistribution structure of the first package include a spacer embedded therein. Second connectors attached to the redistribution structure are fee from the spacer, the spacer of the first connectors keeping a minimum distance between the first package and the second package during attaching the first package to the second package.

A method includes forming a plurality of perforations in a ceramic mastercard by a first laser process, wherein forming the plurality of perforations includes reducing a first thickness of the ceramic mastercard to a second thickness along first predefined lines, and cutting through an entire thickness of the ceramic mastercard along a plurality of second predefined lines by a second laser process, wherein the first predefined lines and the second predefined lines overlap only partly.