A metal base plate is rectangular in plan view, has a joining region set on a front surface, and has a center line, which is parallel to a pair of short sides that face each other, set in a middle interposed between the pair of short sides. A ceramic circuit board includes a ceramic board that is rectangular in plan view, a circuit pattern that is formed on a front surface of the ceramic board and has a semiconductor chip joined thereto, and a metal plate that is formed on a rear surface of the ceramic board and is joined to the joining region by solder. Here, the solder contains voids and is provided with a stress relieving region at one edge portion that is away from the center line. A density of voids included in the stress relieving region is higher than other regions of the solder.

A circuit module includes a substrate with a patterned metal surface. The patterned metal surface includes a conductive terminal pad, a first conductive pad, and a second conductive pad that is non-adjacent to the conductive terminal pad. A first circuit portion is assembled on the first conductive pad and a second circuit portion is assembled on the second conductive pad. A conductive bridge electrically couples the conductive terminal pad and the second conductive pad. The conductive bridge includes an elevated span extending above and across the first conductive pad.

A memory device including a base chip and a memory cube mounted on and connected with the base chip is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes semiconductor chips laterally wrapped by an encapsulant and a redistribution structure. The semiconductor chips of the multiple stacked tiers are electrically connected with the base chip through the redistribution structures in the multiple stacked tiers. The memory cube includes a thermal path structure extending through the multiple stacked tiers and connected to the base chip. The thermal path structure has a thermal conductivity larger than that of the encapsulant. The thermal path structure is electrically isolated from the semiconductor chips in the multiple stacked tiers and the base chip.

Electrically conductive compressible gaskets can be employed to ground a heat solution and provide electromagnetic interference (EMI) shielding. A plurality of gaskets may be arranged around the perimeter of an integrated circuit package such as a processor or system on a chip. Each of the gaskets is in contact with a ground plane in the package, and upon contact with a heat sink or cold plate, creates an electrical path that grounds the heat sink or cold plate and thereby minimizes the emission of spurious radio signals. Other embodiments may be described and/or claimed.

A lead frame includes a support portion that has one end on which a first part and a second part that has a smaller thickness than the first part are arranged, a lead, and a heat sink that is welded to the support portion in the second part. A method of manufacturing the lead frame includes forming, from a metal plate, a frame member that includes a support portion and a lead, where the support portion has one end on which a first part and a second part that has a smaller thickness than the first part are arranged, and welding a heat sink to the support portion in the second part.

An integrated circuit package may be formed having at least one heat dissipation structure within the integrated circuit package itself. In one embodiment, the integrated circuit package may include a substrate; at least one integrated circuit device, wherein the at least one integrated circuit device is electrically attached to the substrate; a mold material on the substrate and adjacent to the at least one integrated circuit device; and at least one heat dissipation structure contacting the at least one integrated circuit, wherein the at least one heat dissipation structure is embedded either within the mold material or between the mold material and the substrate.

A process for batch fabrication of circuit components is disclosed via simultaneously packaging multiple circuit component dice in a matrix. Each die has electrodes on its tops and bottom surfaces to be electrically connected to a corresponding electrical terminal of the circuit component it's packaged in. For each circuit component in the matrix, the process forms preparative electrical terminals on a copper substrate. Component dice are pick-and-placed onto the copper substrate with their bottom electrodes landing on corresponding preparative electrical terminal. Horizontal conductor plates are then placed horizontally on top of the circuit component dice, with bottom surface at one end of each plate landing on the dice's top electrode. An opening is formed at the opposite end and has vertical conductive surfaces. A vertical conductor block is placed into the opening and lands on the preparative electrical terminal, and the opening's vertical conductive surfaces facing the top end side surface of the vertical block. A thermal reflow then simultaneously melts pre-applied soldering material so that each circuit component die and its vertical conductor block are soldered to the copper substrate below and its horizontal conductor plate above.

Disclosed is a method for packaging a chip, comprising the following steps: providing a baseplate formed with an open slot thereon penetrating through opposite sides of the baseplate; providing a release base material, wherein the release base material is bonded to a first side of the baseplate and covers the open slot; providing a chip, wherein the chip is mounted on the release base material at the position of the open slot; packaging a second side of the baseplate facing away from the release base material so as to form a packaging layer which packages the chip and fixes it on the baseplate; removing the release base material so as to obtain a package structure for the chip.

A memory device including a base chip and a memory cube mounted on and connected with the base chip is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes semiconductor chips laterally wrapped by an encapsulant and a redistribution structure. The semiconductor chips of the multiple stacked tiers are electrically connected with the base chip through the redistribution structures in the multiple stacked tiers. The memory cube includes a thermal path structure extending through the multiple stacked tiers and connected to the base chip. The thermal path structure has a thermal conductivity larger than that of the encapsulant. The thermal path structure is electrically isolated from the semiconductor chips in the multiple stacked tiers and the base chip.

Encapsulation warpage reduction for semiconductor die assemblies, and associated methods and systems are disclosed. In one embodiment, a semiconductor die assembly includes an interface die, a stack of semiconductor dies attached to a surface of the interface die, where the stack of semiconductor dies has a first height from the surface. The semiconductor die assembly also includes an encapsulant over the surface and surrounding the stack of semiconductor dies, where the encapsulant includes a sidewall with a first portion extending from the surface to a second height less than the first height and a second portion extending from the second height to the first height. Further, the first portion has a first texture and the second portion has a second texture different from the first texture.