A cyclic cooling embedded packaging substrate and a manufacturing method thereof are disclosed. The packaging substrate includes a dielectric material body, a chip, a first metal face, a second metal face and a first trace. The dielectric material body is provided with a packaging cavity, the chip is packaged in the packaging cavity, the first metal face is embedded in the dielectric material body, covers and is connected to a heat dissipation face of the chip. The second metal face is embedded in the dielectric material body, connected to a surface of the first metal face, and is provided with a first cooling channel pattern for forming a cooling channel. The first trace is arranged on a surface of the dielectric material body or embedded therein, and is connected with a corresponding terminal on an active face of the chip through a first conductive structure.

A thermal interface material (TIM) structure for directing heat in a three-dimensional space including a TIM sheet. The TIM sheet includes a lower portion along a lower plane; a first side portion along a first side plane; a first upper portion along an upper plane; a first fold between the lower portion and the first side portion positioning the first side portion substantially perpendicular to the lower portion; and a second fold between the first side portion and the first upper portion positioning the first upper portion substantially perpendicular to the first side portion and substantially parallel to the lower portion.

A semiconductor device package and a method of forming the same are provided. The semiconductor device package includes a substrate, an electronic component, a ring structure, and an adhesive layer. The electronic component is located over a first surface of the substrate. The ring structure is located over the first surface of the substrate and surrounding the electronic component. The ring structure has a bottom surface facing the first surface of the substrate and a top surface opposite the bottom surface. The ring structure includes a plurality of side parts and a plurality of corner parts recessed from the top surface and thinner than the side parts. Any two of the corner parts are separated from one another by one of the side parts. The adhesive layer is interposed between the bottom surface of the ring structure and the first surface of the substrate.

Exemplary methods of cooling a semiconductor component substrate may include heating the semiconductor component substrate to a temperature of greater than or about 500° C. in a chamber. The semiconductor component substrate may be or include aluminum. The methods may include delivering a gas into the chamber. The gas may be characterized by a temperature below or about 100° C. The methods may include cooling the semiconductor component substrate to a temperature below or about 200° C. in a first time period of less than or about 1 minute.

Disclosed is a method for packaging a chip, comprising the following steps: providing a baseplate formed with an open slot thereon penetrating through opposite sides of the baseplate; providing a release base material, wherein the release base material is bonded to a first side of the baseplate and covers the open slot; providing a chip, wherein the chip is mounted on the release base material at the position of the open slot; packaging a second side of the baseplate facing away from the release base material so as to form a packaging layer which packages the chip and fixes it on the baseplate; removing the release base material so as to obtain a package structure for the chip.

Among two main surfaces of a heat dissipation member, one main surface is curved to be convex in an outward direction and the other convex in an inward direction. When a straight line passing through both endpoints P.sub.1 and P.sub.2 of the curve is l.sub.1, a point at which a distance to l.sub.1 on the curve is maximum is P.sub.max, an intersection point between l.sub.1 and a perpendicular drawn from P.sub.max to l.sub.1 is P.sub.3, a middle point of a line segment P.sub.1P.sub.3 is P.sub.4, an intersection point between the curve and a straight line that passes through P.sub.4 and is perpendicular to l.sub.1 is P.sub.mid, a length of the line segment P.sub.1P.sub.3 is L, a length of a line segment P.sub.3P.sub.max is H, and a length of a line segment P.sub.4P.sub.max is h, (2 h/L)/(H/L) is 1.1 or more.

A sink composed of metal, preferably composed of a solid metal block, in particular composed of aluminium, and also to a method and a tool for the production of same. The heat sink has a plurality of fluid lines for conducting cooling fluid which are separated from one another by heat sink ribs arranged between them, which are arranged next to one another and which run in a parallel manner. It is characterized in that the fluid lines are formed by grooves which are milled into the metal.

A semiconductor device package and a method of forming the same are provided. The semiconductor device package includes a substrate, an electronic component, a ring structure, and an adhesive layer. The electronic component is located over a first surface of the substrate. The ring structure is located over the first surface of the substrate and surrounding the electronic component. The ring structure has a bottom surface facing the first surface of the substrate and a top surface opposite the bottom surface. The ring structure includes a plurality of side parts and a plurality of corner parts recessed from the top surface and thinner than the side parts. Any two of the corner parts are separated from one another by one of the side parts. The adhesive layer is interposed between the bottom surface of the ring structure and the first surface of the substrate.

A semiconductor device includes a metal base plate, a case component, and a metal component. The metal component is fixed to the case component. A partial region of the metal component is exposed from the case component. The partial region is bonded to the base plate in a bonding portion. In the bonding portion, a surface of the partial region and a surface of the base plate are in direct contact with each other and integrated.

Encapsulation warpage reduction for semiconductor die assemblies, and associated methods and systems are disclosed. In one embodiment, a semiconductor die assembly includes an interface die, a stack of semiconductor dies attached to a surface of the interface die, where the stack of semiconductor dies has a first height from the surface. The semiconductor die assembly also includes an encapsulant over the surface and surrounding the stack of semiconductor dies, where the encapsulant includes a sidewall with a first portion extending from the surface to a second height less than the first height and a second portion extending from the second height to the first height. Further, the first portion has a first texture and the second portion has a second texture different from the first texture.