A method for manufacturing a fin-integrated semiconductor module includes: clamping a fin-integrated heat-dissipation base using a level different jig while making the heat-dissipation base vary in height; and soldering a semiconductor assembly onto the heat-dissipation base. A semiconductor module includes a fin-integrated heat-dissipation base and a semiconductor assembly provided on the heat-dissipation base. A bending width of the heat-dissipation base is 200 μm or less.

A metal base plate is rectangular in plan view, has a joining region set on a front surface, and has a center line, which is parallel to a pair of short sides that face each other, set in a middle interposed between the pair of short sides. A ceramic circuit board includes a ceramic board that is rectangular in plan view, a circuit pattern that is formed on a front surface of the ceramic board and has a semiconductor chip joined thereto, and a metal plate that is formed on a rear surface of the ceramic board and is joined to the joining region by solder. Here, the solder contains voids and is provided with a stress relieving region at one edge portion that is away from the center line. A density of voids included in the stress relieving region is higher than other regions of the solder.

A package structure includes first/second/third package components, a thermal interface material (TIM) structure overlying the first package component opposite to the second package component, and a heat dissipating component disposed on the third package component and thermally coupled to the first package component through the TIM structure. The first package component includes semiconductor dies and an insulating encapsulation encapsulating the semiconductor dies, the second package component is interposed between the first and third package components, and the semiconductor dies are electrically coupled to the third package component via the second package component. The TIM structure includes a dielectric dam and thermally conductive members including a conductive material, disposed within areas confined by the dielectric dam, and overlying the semiconductor dies. A manufacturing method of a package structure is also provided.

Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a surface; a die having a first surface and an opposing second surface, wherein the first surface of the die is coupled to the surface of the package substrate; and a cooling apparatus that may include a conductive base having a first surface and an opposing second surface, wherein the first surface of the conductive base is in thermal contact with the second surface of the die, and a plurality of conductive structures on the second surface of the conductive base, wherein an individual conductive structure of the plurality of conductive structures has a width between 10 microns and 100 microns.

An object is to provide a technique capable of suppressing reduction in sticking force of a semiconductor package and a radiation fin in a semiconductor device including the semiconductor package and the radiation fin when the semiconductor package and the radiation fin stick and are fixed to each other by magnetic force. A semiconductor device includes: a semiconductor package; an insulating substrate; a radiation fin; a first fixed part made up of one of a magnetic body and a bond magnet integrally formed with the semiconductor package; and a second fixed part made up of another one of the magnetic body and the bond magnet integrally formed with the radiation fin, wherein the semiconductor package and the radiation fin stick to each other by magnetic force occurring between the first fixed part and the second fixed part.

A semiconductor device includes a semiconductor element, a base plate, and a plurality of contact materials. The base plate has a front surface holding the semiconductor element and a rear surface to which a cooling body to cool the semiconductor element is attachable. The plurality of contact materials are discretely arranged on the rear surface of the base plate. The plurality of contact materials are materials for bridging a gap on a heat dissipation path between the base plate and the cooling body. The plurality of contact materials each have a volume based on a bowed shape of the rear surface of the base plate. From among the plurality of contact materials, a contact material at a concave of the bowed shape has a greater volume than a contact material at a convex of the bowed shape.

A semiconductor device includes a vapor chamber lid for high power applications such as chip-on-wafer-on-substrate (CoWoS) applications using high performance processors (e.g., graphics processing unit (GPU)) and methods of manufacturing the same. The vapor chamber lid provides a thermal solution which enhances the thermal performance of a package with multiple chips. The vapor chamber lid improves hot spot dissipation in high performance chips, for example, at the three-dimensional (3D-IC) packaging level.

A package structure and a method for manufacturing the same are provided. The package structure includes an electronic device, a heat spreader, an intermediate layer and an encapsulant. The electronic device includes a plurality of electrical contacts. The intermediate layer is interposed between the electronic device and the heat spreader. The intermediate layer includes a sintered material. The encapsulant encapsulates the electronic device. A surface of the encapsulant is substantially coplanar with a plurality of surfaces of the electrical contacts.

A method of making a semiconductor device can include providing a temporary carrier with adhesive. A first semiconductor die and a second semiconductor die can be mounted face up to the temporary carrier such that back surfaces of the first semiconductor die and the second semiconductor die are depressed within the adhesive. An embedded die panel can be formed by encapsulating at least four sides surfaces and an active surface of the first semiconductor die, the second semiconductor die, and side surfaces of the conductive interconnects in a single step. The conductive interconnects of the first semiconductor die and the second semiconductor die can be interconnected without a silicon interposer by forming a fine-pitch build-up interconnect structure over the embedded die panel to form at least one molded core unit. The at least one molded core unit can be mounted to an organic multi-layer substrate.

Disclosed are exemplary embodiments of systems and methods of applying thermal interface materials (TIMs). The thermal interface materials may be applied to a wide range of substrates and components, such as lids or integrated heat spreaders of integrated circuit (IC) packages, board level shields, heat sources (e.g., a central processing unit (CPU), etc.), heat removal/dissipation structures or components (e.g., a heat spreader, a heat sink, a heat pipe, a vapor chamber, a device exterior case or housing, etc.), etc.