Disclosed is an apparatus for treating a substrate, which includes: a first unit configured to perform a coating process of forming a film on a substrate; a transfer unit including a transfer robot transferring a substrate for which the coating process is terminated; and a controller controlling the first unit and the transfer unit, in which the controller controls the substrate for which the coating process is terminated in the first unit to rotate at a first rotational velocity until the substrate is transferred by the transfer unit.

A processing apparatus includes a wafer cassette table, a wafer carrying-out mechanism, a wafer table, a frame housing unit, a frame carrying-out mechanism, a frame table, a tape sticking unit, a tape-attached frame conveying mechanism, a tape pressure bonding unit, a frame unit carrying-out mechanism, a reinforcing part removing unit, a ring-free unit carrying-out mechanism, and a frame cassette table. The wafer carrying-out mechanism includes a Bernoulli chuck mechanism that jets gas to the back surface of the wafer and generates a negative pressure. The gas jetted by the Bernoulli chuck mechanism is inert gas. The wafer carrying-out mechanism jets the inert gas from the Bernoulli chuck mechanism to suppress oxidation of the back surface of the wafer when the wafer is carried out.

Methods and apparatus for producing bulk silicon carbide and producing silicon carbide coatings are provided herein. The method includes feeding a mixture of silicon carbide and ceramic into a plasma sprayer. The plasma generates a stream towards a substrate forming a bulk material or optionally a coating on the substrate such as an article upon contact therewith. In embodiments, the substrate can be removed, leaving a component part fabricated from bulk silicon carbide.

A protective member forming apparatus includes a resin film adhering unit which causes a resin film to adhere to a front surface of a substrate so as to conform to recesses and projections on the front surface of the substrate, a support table which supports the substrate, a liquid resin supplying unit which supplies a curable liquid resin, a pressing unit which covers the liquid resin supplied to the resin film with a cover film and presses the cover film by a pressing surface to spread the liquid resin over the resin film, and a curing unit which cures the liquid resin being spread. The support table includes an annular bank region having a height not exceeding a thickness of the substrate and housing the substrate therein, and the bank region prevents the liquid resin to be spread by the pressing unit from flowing out from the substrate.

A semiconductor process system includes a process chamber with a lid. The system includes a heater positioned on the lid and a controller configured to control the heater. The controller operates the heater to provide a selected temperature distribution of the lid.

Manufacturing equipment with which steps from processing to sealing of an organic compound film can be continuously performed is provided. The manufacturing equipment enables continuous processing of a patterning step of a light-emitting device and a light-receiving device and a step of sealing top and side surfaces of organic layers to prevent the top and side surfaces from being exposed to the air, which allows formation of the light-emitting device and the light-receiving device each of which has a minute structure, high luminous, and high reliability. This manufacturing equipment can be built in an in-line manufacturing system where apparatuses are arranged according to the order of process steps for the light-emitting device and the light-receiving device, resulting in high throughput manufacturing.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber providing a treating space; and a fluid supply unit supplying a treating fluid to the chamber, and wherein the fluid supply unit includes: a supply tank storing the treating fluid; a supply line connecting the supply tank and the chamber; and a plurality of valves installed at the supply line, and wherein any one valve among the plurality of valves is provided as a safety valve, and wherein the safety valve is opened after confirming that the chamber has been switched to a closed state when supplying the treating fluid from a tank to the chamber.

A film-forming apparatus for forming a predetermined film on a substrate by plasma ALD includes a chamber, a stage, a shower head having an upper electrode and a shower plate insulated from the upper electrode, a first high-frequency power supply connected to the upper electrode, and a second high-frequency power supply connected to an electrode contained in the stage. A high-frequency power is supplied from the first high-frequency power supply to the upper electrode, thereby forming a high-frequency electric field between the upper electrode and the shower plate and generating a first capacitively coupled plasma. A high-frequency power is supplied from the second high-frequency power supply to the electrode, thereby forming a high-frequency electric field between the shower plate and the electrode in the stage and generating a second capacitively coupled plasma that is independent from the first capacitively coupled plasma.

An etching method is provided. In the etching method, a protective film-forming gas including an amine gas is supplied to a substrate having a surface on which a first film and a second film are formed, the first film and the second film having respective properties of being etched by an etching gas, and a protective film is formed to cover the first film such that the first film is selectively protected between the first film and the second film when the etching gas is supplied. Further, the second film is selectively etched by supplying the etching gas to the substrate after the protective film is formed.

Embodiments described herein provide for post deposition anneal of a substrate, having an amorphous carbon layer deposited thereon, to desirably reduce variations in local stresses thereacross. In one embodiment, a method of processing a substrate includes positioning a substrate, having an amorphous carbon layer deposited thereon, in a first processing volume, flowing an anneal gas into the first processing volume, heating the substrate to an anneal temperature of not more than about 450° C., and maintaining the substrate at the anneal temperature for about 30 seconds or more. Herein, the amorphous carbon layer was deposited on the substrate using a method which included positioning the substrate on a substrate support disposed in a second processing volume, flowing a processing gas into the second processing volume, applying pulsed DC power to a carbon target disposed in the second processing volume, forming a plasma of the processing gas, and depositing the amorphous carbon layer on the substrate.