A processing apparatus includes a wafer cassette table, a wafer carrying-out mechanism, a wafer table, a frame housing unit, a frame carrying-out mechanism, a frame table, a tape sticking unit, a tape-attached frame conveying mechanism, a tape pressure bonding unit, a frame unit carrying-out mechanism, a reinforcing part removing unit, a ring-free unit carrying-out mechanism, and a frame cassette table. The wafer carrying-out mechanism includes a Bernoulli chuck mechanism that jets gas to the back surface of the wafer and generates a negative pressure. The gas jetted by the Bernoulli chuck mechanism is inert gas. The wafer carrying-out mechanism jets the inert gas from the Bernoulli chuck mechanism to suppress oxidation of the back surface of the wafer when the wafer is carried out.

A substrate debonding apparatus includes a chuck attached to a second surface opposite to the first surface of the semiconductor substrate via a second adhesive layer. The chuck is configured to support a lower portion of a base film having a cross-sectional area in a horizontal direction greater than a cross-sectional area of the semiconductor substrate in the horizontal direction. The semiconductor debonding apparatus further includes a fixing ring arranged above the chuck and configured to fix in position an edge portion of the base film, and a cover ring arranged above the fixing ring and configured to adjust a diameter of an opening exposing the carrier substrate. The cover ring includes a guide frame arranged above the fixing ring, and a plurality of cover blades configured to move in a horizontal direction determined by the guide frame.

Embodiments disclosed herein include a method for determining a temperature error of a pyrometer. In an embodiment, the method comprises measuring a first signal with a first sensor of the pyrometer and measuring a second signal with a second sensor of the pyrometer. In an embodiment, the method further comprises determining a reflectivity of a reflector plate from the first signal and the second signal, and determining the temperature error using the reflectivity.

A method of operating an apparatus for laser annealing, includes reducing temporal or spatial coherency of a plurality of laser beams by beam superimposing; and reducing an electric field inner product magnitude of beams having the reduced temporal or spatial coherency by a fly eye lens array to reduce coherency, and/or by modifying a polarization state between the beams by beam superimposing.

A substrate debonding apparatus configured to separate a support substrate attached to a first surface of a device substrate by an adhesive layer, the substrate debonding apparatus including a substrate chuck configured to support a second surface of the device substrate, the second surface being opposite to the first surface of the device substrate; a light irradiator configured to irradiate light to an inside of the adhesive layer; and a mask between the substrate chuck and the light irradiator, the mask including an opening through which an upper portion of the support substrate is exposed, and a first cooling passage or a second cooling passage, the first cooling passage being configured to provide a path in which a coolant is flowable, the second cooling passage being configured to provide a path in which air is flowable and to provide part of the air to a central portion of the opening.

The present disclosure provides a method of heating a spin on coating (SOC) film on a wafer. The method includes actions S401 to S405. In action S401, a heating apparatus is provided. The heating apparatus includes a bake plate and an electromagnetic wave generator. In action S402, the bake plate is heated by a heating unit disposed in the bake plate. In action S403, the wafer is placed on the bake plate of the heating apparatus. In action S404, the electromagnetic wave generator generates an electromagnetic wave to heat the SOC film. The electromagnetic wave generated by the electromagnetic wave generator has a frequency within a range of 1 THz to 100 THz. In action S405, the wafer is removed from the bake plate of the heating apparatus.

A mounting table is provided. The mounting table includes an electrostatic chuck configured to mount thereon a target object and attract and hold the target object using an electrostatic force, and a gas supply line configured to supply a gas to a gap between the target object mounted on the electrostatic chuck and the electrostatic chuck via the electrostatic chuck. The mounting table further includes at least one irradiation unit configured to irradiate light having a predetermined wavelength to the gas flowing through the gas supply line or to the gas supplied to the gap between the target object and the electrostatic chuck to ionize the gas.

A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

Localized stresses can be modulated in a film deposited on a bowed semiconductor substrate by selectively and locally curing the film by ultraviolet (UV) radiation. A bowed semiconductor substrate can be asymmetrically bowed. A UV-curable film is deposited on the front side or the backside of the bowed semiconductor substrate. A mask is provided between the UV-curable film and a UV source, where openings in the mask are patterned to selectively define exposed regions and non-exposed regions of the UV-curable film. Exposed regions of the UV-curable film modulate localized stresses to mitigate bowing in the bowed semiconductor substrate.

A semiconductor apparatus and a method for collecting residues of curable material are provided. The semiconductor apparatus includes a chamber containing a wafer cassette, and a collecting module disposed in the chamber for collecting residues of curable material in the chamber. The collecting module includes a flow-directing structure disposed below a ceiling of the chamber, a baffle structure disposed below the flow-directing structure, and a tray disposed on the wafer cassette. The flow-directing structure includes a first hollow region, the baffle structure includes a second hollow region, and the tray is moved together with the wafer cassette to pass through the second hollow region of the baffle structure and is positioned to cover the first hollow region of the flow-directing structure.