A transportation system for semiconductor module base plates includes a plurality of spacer elements. Each spacer element includes a distance holding element, a first pin on a first side of the distance holding element, and a second pin on a second side of the distance holding element. Each spacer element is configured to be arranged between two of a plurality of semiconductor module base plates. Each of the first pin and the second pin is configured to engage with a corresponding counterpart of one of the semiconductor module base plates when the corresponding spacer element is arranged between two of the semiconductor module base plates.

The present application relates to a base frame of a substrate carrier, including a first vertical rod and a second vertical rod; a plurality of cross rods, being arranged along the lengthwise direction of the first vertical rod and the second vertical rod, and being connected between the first vertical rod and the second vertical rod; a first vertical rod extension, being connected to an end of the first vertical rod from which a substrate enters; and a second vertical rod extension, being connected to an end of the second vertical rod from which the substrate enters; and the first vertical rod extension and the second vertical rod extension are configured to accommodate at least one set of rollers for conveying the substrate therebetween.

A substrate holder includes a first boat configured to hold a substrate in a shelf-like manner, and a second boat coaxial with the first boat and provided to move up and down relative to the first boat. The second boat holds a substrate in a shelf-like manner. The first boat includes a first bottom plate and a first ceiling plate provided to face each other, a first support column connecting the first bottom plate and the first ceiling plate to each other, and a first placement surface on which the substrate is placed. The second boat includes a second bottom plate and a second ceiling plate provided to vertically face each other, a second support column connecting the second bottom plate and the second ceiling plate, and a second placement surface on which the substrate is placed. The second ceiling plate overlaps the first ceiling plate in a plan view.

Wafer boat handling device, configured to be positioned under a process chamber of a vertical batch furnace, and comprising a rotatable table comprising a first and a second wafer boat support surface. Each wafer boat support surface is configured for supporting a wafer boat. The rotatable table is rotatable by an actuator to rotate both the first and the second wafer support surfaces to a load/receive position in which the wafer boat handling device is configured to load a wafer boat vertically from the rotatable table into the process chamber and to receive the wafer boat from the process chamber onto the rotatable table, a cooldown position in which the wafer boat handling device is configured to cool down a wafer boat, and a transfer position for transferring wafers to and/or from the wafer boat.

There is provided a technique that includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas to the substrate in a process container of a substrate processing apparatus via a first pipe made of metal; (b) supplying an oxygen-containing gas to the substrate in the process container via a second pipe made of metal, wherein a fluorine-containing layer is continuously formed on an inner surface of the second pipe; and (c) supplying a nitrogen-and-hydrogen-containing gas to the substrate in the process container via the second pipe.

A substrate processing apparatus that accommodates a substrate holder in which a substrate is placed in a processing container and forms a film onto the substrate, includes: a film thickness meter that measures a thickness of the film formed on the substrate; a state analysis unit that analyzes variation of the film thickness from a measurement result output from the film thickness meter at a plurality of measurement points where the film thickness on the substrate is measured; a singular point detection unit that, based on the analysis result, detects a measurement point where a difference from an adjacent measurement point deviates from a predetermined condition, as a singular point; and a singular point correction unit that corrects a measurement result of the singular point so that the difference of the film thickness between the singular point and the adjacent measurement point is within a predetermined condition.

A vertical wafer boat for a diffusion process is provided. The vertical wafer boat includes a plurality of wafer racks. Each of the plurality of wafer racks includes a vertical support member and a plurality of wafer support arms. The plurality of wafer support arms extends from a sidewall of the vertical support member. Each of the wafer support arms includes a support body and a ledge. The support body is located between the vertical support member and the ledge. Centers of the support body and the ledge are horizontally aligned. A vertical thickness of the ledge is smaller than a vertical thickness of the support body.

In accordance with an exemplary embodiment, a substrate processing apparatus includes: a tube assembly having an inner space in which substrates are processed and assembled by laminating a plurality of laminates, each of which includes an injection part and an exhaust hole; a substrate holder configured to support the plurality of substrates in a multistage manner in the inner space; a supply line connected to one injection part of the plurality of laminates to supply a process gas; and an exhaust line connected to one of a plurality of exhaust holes to exhaust the process gas, and the substrate processing apparatus that has a simple structure and induces a laminar flow of the process gas to uniformly supply the process gas to a top surface of the substrate.

The present disclosure relates to a method and device for decreasing generation of surface oxide of aluminum nitride. In a physical vapor deposition process, the aluminum nitride is deposited on a substrate in a deposition chamber to form an aluminum nitride coated substrate. A cooling chamber and a cooling load lock module respectively perform a first stage cooling and a second stage cooling on the aluminum nitride coated substrate in vacuum environments, so as to prevent the aluminum nitride coated substrate with the high temperature from being exposed in an atmosphere environment to generate the surface oxide. The method and device for decreasing the generation of the surface oxide of the aluminum nitride can further eliminate crystal defects caused by that gallium nitride is deposited on the surface oxide of the aluminum nitride in the next process.

According to the present disclosure, there is provided a technique capable of improving a strength of a substrate retainer. According to one aspect of the technique of the present disclosure, there is provided a substrate retainer including: annular structures arranged at predetermined intervals; support columns configured to support the annular structures and provided along outer edges of the plurality of annular structures, wherein a width of each of the support columns is smaller than a width of each of the annular structures; support structures extending from the support columns toward a radially inward direction and configured to support a substrate between two adjacent annular structures; and connecting structures welded to at least one of the support columns and to the annular structures so as to connect the at least one of the support columns with the annular structures.